RESISTOR 650 OHM Search Results

Contextual Info: EIC1010-4 10.00-10.70 GHz 4-Watt Internally Matched Power FET UPDATED 02/15/2005 FEATURES • • • • • • • • .650±.008 .512 .004 .129 Id1dB IM3 RTH VDS = 3 V, IDS = 20 mA 3 Thermal Resistance 1 Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level.

Contextual Info: SERIES PPR, PPT RESISTORS & TERMINATIONS High Power, Thin Film, Drop-in – 10-650 Watts, DC-4 GHz GENERAL INFORMATION These high power devices are designed to dissipate power in RFcircuits when mounted to an appropriate heat sink. The terminations provide a low VSWR under maximum power conditions. The resistor configurations are typically used in

Stripline Flange Terminations

Abstract: 975-250-3 PPR 975-250-3
Contextual Info: SERIES PPR, PPT RESISTORS & TERMINATIONS High Power, Thin Film, Drop-in – 10-650 Watts, DC-4 GHz GENERAL INFORMATION These high power devices are designed to dissipate power in RFcircuits when mounted to an appropriate heat sink. The terminations provide a low VSWR under maximum power conditions. The resistor configurations are typically used in

975-250-3

Abstract: thick film ppt 1.57 GHz 515-30 6 watts resistor KDI "power divider" PMS-100 PPT Diode data sheet specifications PPT800-100A
Contextual Info: SERIES PMS, PPR, PPT RESISTORS & TERMINATIONS High Power, Thin Film, Drop-in – 10-650 Watts, DC-4 GHz RoHS GENERAL INFORMATION These high power devices are designed to dissipate power in R.F. circuits when mounted to an appropriate heat sink. The terminations provide a low VSWR under maximum power conditions. The resistor configurations are typically used in

Contextual Info: SERIES PMS, PPR, PPT RESISTORS & TERMINATIONS High Power, Thin Film, Drop-in – 10-650 Watts, DC-4 GHz GENERAL INFORMATION These high power devices are designed to dissipate power in R.F. circuits when mounted to an appropriate heat sink. The terminations provide a low VSWR under maximum power conditions. The resistor configurations are typically used in

Contextual Info: SERIES PMS, PPR, PPT RESISTORS & TERMINATIONS High Power, Thin Film, Drop-in – 10-650 Watts, DC-4 GHz RoHS GENERAL INFORMATION These high power devices are designed to dissipate power in R.F. circuits when mounted to an appropriate heat sink. The terminations provide a low VSWR under maximum power conditions. The resistor configurations are typically used in

975-250-3

Abstract: Stripline Flange Terminations thick film ppt PPT Series PPR 975-250-3 PPT 975-250-3
Contextual Info: SERIES PPR, PPT RESISTORS & TERMINATIONS High Power, Thin Film, Drop-in – 10-650 Watts, DC-4 GHz RoHS GENERAL INFORMATION These high power devices are designed to dissipate power in R.F. circuits when mounted to an appropriate heat sink. The terminations provide a low VSWR under maximum power conditions. The resistor configurations are typically used in

12AWG

Contextual Info: Ohmite’s Four Terminal Bare Element Resistors provide ultra low resistance values to 0.0005Ω for relatively high current requirements, with the advantages of a Kelvin configuration and PC Board mounting capability. These shunt resistors are specifically designed for low

60 Series

Abstract: A3UV
Contextual Info: 60 Series Four Terminal Bare Element Ohmite’s Four Terminal Bare Element Resistors provide ultra low resistance values to 0.0005Ω for relatively high current requirements, with the advantages of a Kelvin configuration and PC Board mounting capability.

ohmite 20 series

Contextual Info: Ohmite’s Four Terminal Bare Element Resistors provide ultra low resistance values to 0.0005Ω for relatively high current requirements, with the advantages of a Kelvin configuration and PC Board mounting capability. These shunt resistors are specifically designed for low

4700uf

Abstract: 0.5W resistor 600VA resistor 650 ohm 9.5v 0.5W
Contextual Info: 10A QUICK BLOW FUSE +80 to +95V I/P +V 0V INPUT O/P -V 4 OHMS TO *NOTE 1 0V 120 OHM 0.5W RESISTOR *NOTE 2 10A QUICK BLOW FUSE - 80 to -95V 10A QUICK BLOW FUSE +V 65V + 15A BRIDGE ON H/SINK 65V T1 T1 = 600VA +65-0, 65-0 C1/C2 = 4700uF 80V ELECTROLYTICS BRIDGE = 25A 400V PIV

E255159

Contextual Info: o o CD C H G O FEATURES Low cost & Light Weight Non-Inductive Type Available Good Heat Conduction Excellent Space Factor For Installation Higher or Lower Ohmic Values available Modules with Thermal Switch available Type : SLR CO U O -P CO APPLICATIONS Charging Resistor

IH6216CPI

Abstract: DG507 S14B s24b IH6216 s25b AD7507 HI507 IH6216CDI IH6216MDI
Contextual Info: IH6216 8-Channel Differential C M O S A n alog M ultiplexer OffffiEÜ^DIL FEATURES GENERAL DESCRIPTION • Pin compatible with HI507, DG507 & AD7507 • ± 11V analog signal range • r o s o n < 700 ohms over full signal and temperature range • Break before make switching

resistor 5 0.25W 1M

Abstract: high voltage resistor 100 kv Pilkor Resistor
Contextual Info: PILKOR components High ohmic high voltage non inductive resistors HNR FEATURES • High voltage & ohmic  Non inductive  Low T.C.R  Excellent stability to heat and moisture APPLICATIONS  High voltage dividers  Measurements high voltage  Medical (Imaging, Blood analyzers)

Contextual Info: FOUR TERMINAL TYPE SM- 4 "Profit from PRECISION" power 4-terminal designs: • Perfect for low-cost current sensing by voltage drop method. • Resistance values to 0.015 ohm (full power) and to 0.005 ohm at reduced voltage. • TCR char: 0±15ppm/°C. • Low EMF construction reduces annoying thermal effects.

Contextual Info: USR UNR 4-3425 Powertron FEATURES • Resistances from 0.05Ohm to 500Ohms • Power Rating to 50Watt • Resistance Tolerances to ±0.01% • TCR to ±1ppm/K • Load Stability to 0.01% TABLE 1—SPECIFICATIONS TYPE USR 4-3425 UNR 4-3425 0.05 to 650 Ohms

Contextual Info: FOUR TERMINAL TYPE SM- 4 .005 HI Type SMI55-4 In ± 0.1% 1.25W in-stock! 01 £3 .02 o i .05 83 Custom power 4-terminal designs available: • Resistance values to 0.015 ohm (full power) and to 0.005 ohm at reduced voltage. • TCR char: 0±15ppm/°C. • Low EMF construction reduces annoying thermal effects.

SMD RESISTOR 1r00

Abstract: RACF104D
Contextual Info: RACF Series Stackpole Electronics, Inc. Concave Termination Chip Resistor Array Features: • • • • • Resistive Product Solutions Thick film resistor element Zero ohm available Auto-placement capability Multiple circuit types available Ideal SMD substitute for leaded networks

SMD RESISTOR 1r00

Contextual Info: RACF Series Stackpole Electronics, Inc. Concave Termination Chip Resistor Array Features: • • • • • Resistive Product Solutions Thick film resistor element Zero ohm available Auto-placement capability Multiple circuit types available Ideal SMD substitute for leaded networks

NET1080

Abstract: 93C56L 93C46L 93CS56 netchip pioneer pll 10BT 93CS06 93CS46 93CS66
Contextual Info: NetChip Technology, Inc. 335 Pioneer Way Mt View, California 94041 650 526-1490 Fax (650) 526-1494 e-mail: sales@netchip.com Internet: www.netchip.com NET1080 USB TurboCONNECT PRELIMINARY SPECIFICATION For Revision 2 IC Doc #: 605-1080-0206 Revision: 0.6

EIA1414-6

Abstract: 28MA3
Contextual Info: EIA1414-6 14.00-14.50 GHz 6-Watt Internally Matched Power FET UPDATED 12/5/2005 FEATURES • • • • • • .060 MIN. 14.00– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression

14.5ghz

Abstract: transistor 38W EIC1414-8
Contextual Info: EIC1414-8 14.0-14.5 GHz 8-Watt Internally Matched Power FET ISSUED 6/30/2006 FEATURES • • • • • • 14.0– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression

equivalent transistor PT 3500

Abstract: EIA1111-6
Contextual Info: EIA1111-6 11.0-11.5 GHz 6-Watt Internally Matched Power FET UPDATED 12/06/2005 .060 MIN. FEATURES • • • • • • .650±.008 .512 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression

LM7805

Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
Contextual Info: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.