RESISTOR 2200 OHM Search Results

Contextual Info: 5 % Resistor Assortment Kit 100 Values* Ohm Ohm Ohm Ohm 0Q 8200 10KO 750 1.0Q l.OKO 12KO 820 4.7Q 1.2KO 15KO 1000 10Q 1.5KO 18KO 1200 12£2 20KO 1.8KO 1500 15Q 2.0KO 22KO 1800 18Q 2.2KO 27KO 2000 20Q 2.7KO 30KO 2200 220 3.0KO 33KO 2700 27Q 3.3KO 39KO 3000

Contextual Info: 5% Chip Resistor minil^eer 0402 to 1206 Size E24 Values OHM Code OHM on 000 10 a 210 211 212 213 2 t5 216 1000 1100 1200 1300 15 00 1600 218 220 18 00 2000 2200 2400 n n 120 i3 n 150 160 IS O 200 220 680 750 222 224 227 230 233 236 239 243 247 251 256 262

ON4705

Abstract: ON1545 ON471 om1535 TAP600K OK4725 ON472 OM103 heat sinkable on1005
Contextual Info: Ohmite Carbon Film Resistors and Heat Sinkable Resistors Visit Ohmite’s Website at www.ohmite.com Carbon Film Resistors 1.102" 28.00 mm OK Series continued Dia. Length OJ/OK/OL/OM/ON Series ᭤ High Stability, Low Noise Level, Long Life ᭤ Ideal for Applications Requiring a Steady Low Power Drop

transistor g 10597

Abstract: EIC4450-8
Contextual Info: EIC4450-8 4.4-5.0 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 4.4 – 5.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 36% Power Added Efficiency

Contextual Info: EIC4450-8 4.40-5.00 GHz 8W Internally Matched Power FET UPDATED 11/15/2006 FEATURES • • • • • • • • 4.4 – 5.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression

Contextual Info: Product Specification PE4306 50Ω RF Digital Attenuator 5-bit, 31 dB, 1 – 4000 MHz The PE4306 is a high linearity, 5-bit RF Digital Step Attenuator DSA covering a 31 dB attenuation range in 1dB steps, and is pin compatible with the PE430x series. This 50-ohm RF DSA

CTS RESISTOR NETWORK

Abstract: CTS 750 resistor 220000 cts 495 marking code 124 cts resistor Single-In-Line Conformal Series 770 770 CTS RESISTOR NETWORK CTS Series 750 Resistor Network
Contextual Info: Single-In-Line Conformal Series 770 Ohms EIA Code Available in 4 through 12 Pins Bussed CTS Schematic 1 2.41 MAX. 0.095 "A" DIM. CTS DATE PART NUMBER 4.95 MAX. 0.195 3.43 0.135 Low Profile Conformal Products CTS’ expertise in resistor network technology

Contextual Info: Single-In-Line Conformal Series 770 Ohms EIA Code Available in 4 through 12 Pins Bussed CTS Schematic 1 2.41 MAX. 0.095 "A" DIM. CTS DATE PART NUMBER 4.95 MAX. 0.195 3.43 0.135 Low Profile Conformal Products CTS’ expertise in resistor network technology

Prescalers

Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
Contextual Info: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an

80-0259-H

Abstract: czn-15e microphone czn-15e 10 LED Microphone VU meter VU 10 LED meter Microphone circuit PRIMO EM-4114 em 60 microphone EM-8001 PRIMO MICROPHONES MB6022ASC-2
Contextual Info: Selecting a Microphone DESIGN NOTE I. Overview Selecting a proper microphone and its source or biasing resistor are essential for achieving good recognition results. This design guide describes the procedures for calculating the optimal resistor value, and provides

transistor 20 dB 2400 mhz

Contextual Info: Preliminary Preliminary Product Description SXT-289 Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

Contextual Info: Surface Mounted Thermistors Welwyn PTCR SERIES • TCR's up to + 3 5 0 0 ppm • Custom designs available • Solder terminations have a nickel barrier layer • Resistance range 10 ohms to 800 ohms • Tolerances down to 2% • Available in 0805 and 1206 sizes

PTCR

Abstract: 800R
Contextual Info: Surface Mounted Thermistors Welwyn Components PTCR Series • TCR’s up to +3500 ppm • Custom designs available • Solder terminations have a nickel barrier layer • Resistance range 10 ohms to 800 ohms • Tolerances down to 2% • Available in 0805 and 1206 sizes

chips ne22

Abstract: 800R IEC62 PTCR1206
Contextual Info: PTCR_C.qxd 8/9/04 4:00 PM Page 1 Surface Mounted Thermistors Welwyn Components PTCR Series • TCR’s up to +3500 ppm • Custom designs available • Solder terminations have a nickel barrier layer • Resistance range 10 ohms to 800 ohms • Tolerances down to 2%

EIC7177-8

Contextual Info: EIC7177-8 7.10-7.70 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 7.10 – 7.70 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB Compression 35% Power Added Efficiency

transistor amplifier 3 ghz 10 watts

Abstract: EIC0910-8 73790
Contextual Info: EIC0910-8 9.50-10.50 GHz 8-Watt Internally-Matched Power FET Issued Date: 06-07-04 FEATURES • • • • • • • • 9.50 – 10.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression

PT 3195 rf power transistor

Abstract: 60Ghz 60GHz transistor EIC8596-8
Contextual Info: EIC8596-8 8.50-9.60 GHz 8-Watt Internally-Matched Power FET Issued Date: 06-07-04 FEATURES • • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression

1389 de

Abstract: EIC6472-8
Contextual Info: EIC6472-8 6.40-7.20 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 6.40 – 7.20 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 9.5 dB Power Gain at 1dB Compression 36% Power Added Efficiency

7741 8 PIN

Abstract: EIC7785-8 9916 transistor transistor 29098
Contextual Info: EIC7785-8 7.70-8.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 7.70 – 8.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency

recommended land pattern for 0201

Contextual Info: Preliminary Preliminary Product Description SXT-289 Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular

Contextual Info: VG112 PCS/UMTS-band Variable Gain Amplifier Applications GND GND Vbias1 Gain Ctrl 5 GND GND 6 4 3 2 1 28 GND GND 9 27 Vcc1 GND 10 Amp 26 GND 25 RF OUT / Vcc2 RF IN 11 GND 12 24 GND Variable Attenuator GND 13 23 GND 14 RF OUT / Vcc2 18 19 20 21 GND 17 GND 16

nec j137

Abstract: J137 nec j297 UPB586G divide-by-256 uPB586 BF08 UPB586B UPB586G-E1 Vcc, pin 4
Contextual Info: 2.5 GHz DIVIDE- BY- 512/256 PRESCALER UPB586B UPB586G TEST CIRCUIT FEATURES • HIGH FREQUENCY OPERATION TO 2.5 GHz VCC M • WIDE BAND OPERATION 2200 pF* • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% 2200 pF 1 8 2 7 3 6 4 5 2200 pF 2200 pF INPUT • AVAILABLE IN TAPE AND REEL

0814 de

Abstract: 4069 or gate transistors equivalent 0912 175C EIC5964-8
Contextual Info: EIC5964-8 UPDATED 08/21/2007 5.90-6.40GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression

SCN-2-11 -MiniCircuits

Abstract: SCN-2-22 FV1206-1
Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 2 WAY-0° MIniature Ceramic 800 MHz to 2700 MHz NEW! SCN MODEL NO. FREQ. RANGE MHz ISOLATION (dB) INSERTION LOSS (dB) Above 3dB PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB) fL-fU Typ. Min. Typ. Max. Typ. Max. Typ. Max.