RELIABILITY REPORT AND TESTS FOR FAILURE RATE Search Results

OF IGBT

Abstract: IGBT Power Module siemens ag siemens igbt BSM 150 gb 100 d siemens igbt igbt module bsm 300 siemens igbt BSM 300 reliability report and tests for failure rate how can test igbt siemens igbt BSM 75 gb 100 Siemens BSM 50 GB 100 DN1
Contextual Info: Status Report for the Improvement Programme for Siemens IGBT Modules Contents: 1. Scope and Reliability requirements 2. Investigations regarding Temperature Cycling and Power Cycling 3. Results of Temperature and Power Cycling tests 4. Figures on Lifetime and Failure Rate

pj 989

Abstract: PASIC 380 145026 14093 38980 report on PLCC solar cell Amorphous 144TQFP PACKAGE 84 pin plcc ic base QL8X12B-2
Contextual Info: pASIC 1 FAMILY Reliability Report SUMMARY The pASIC device is a highly reliable Field Programmable Gate Array. The addition of the ViaLink to a CMOS process does not measurably increase the failure rate of the pASIC devices above that of normal CMOS logic products. The following is the summary of the High

report on PLCC

Abstract: 40673 plcc 68 QL8X12A reliability report solar cell Amorphous 40673 equivalent ql8x12 144TQFP PACKAGE QL8X12B
Contextual Info: SUMMARY August 1997 The pASIC device is a highly reliable Field Programmable Gate Array. The addition of the ViaLink to a CMOS process does not measurably increase the failure rate of the pASIC devices above that of normal CMOS logic products. The following is the summary of the High

ULN2000

Contextual Info: RELIABILITY REPORT RELIABILITY OF SERIES U LN 2000A AND U LN 2800A DARLINGTON DRIVERS This report summarizes accelerated-life tests that have been per­ formed on Series ULN2000/2800A integrated circuits and provides information that can be used to calculate the failure rate at any junction

cecc 50000

Contextual Info: RELIABILITY REPORT RELIABILITY AND FAILURE M ECHANISMS FUNDAM ENTALS In its sim plest form the failure rate at a given tem perature is: F.R. : -Through accelerated stresses we ascertain the value of the com ponents failure rates, in term s of how many devices (in percent) are expected to fail

atm lu 738

Contextual Info: RELIABILITY REPORT RELIABILITY AND FAILURE M ECHANISMS FUNDAM ENTALS -Through accelerated stresses we ascertain the value of the com ponents failure rates, in term s of how many devices in percent are expected to fail every 1000 hours of operation (X or F.R.)

ULN2000

Abstract: ULN2000A VLN2000A ULN2800 UDN2980A VLN2800A 099-4
Contextual Info: RELIABILITY REPORT RELIABILITY OF SERIES ULN2000A AND VLN 2800A D ARLIN G TO N D RIVERS This report summ arizes accelerated-life tests that have been per­ form ed on Series ULN2000/2800A integrated circuits and provides information that can be used to calculate the failure rate at any junction

68hc11pa8

Abstract: 68hc11kg4 68B09E 68HC11PH8 HC711KG4 68HC11KA4 68HC57 68HC11L6 HC705B16 motorola 68hc11kg4
Contextual Info: MCTG RELIABILITY AND QUALITY 1996 ANNUAL REPORT MRQSY96/D Microcontroller Technologies Group Reliability and Quality 1996 Annual Report To Our Valued Customers: Thank you for selecting Motorola as your preferred supplier of Microcontroller products. We in Motorola’s

68hc26

Abstract: 68HC05C4 68hc705p9 68HC05B6 JPC3400 68hc805b6 68705r3 68HC05C12 68HC705B5 68HC68SE
Contextual Info: CSIC Microcontroller Division Reliability and Quality Quarter 2, 1996 Report MOTOROLA INC., 1996 CSIC MICROCONTROLLER DIVISION RELIABILITY AND QUALITY REPORT TECHNICAL INFORMATION . 1-1 RELIABILITY DATA BY TECHNOLOGY. 2-1

68HC11L6

Abstract: 68hc11ka4 68HC11PH8 68HC11a1 527 MOSFET TRANSISTOR motorola D65C 68HC05N4 nippon denso 68HC05B6 128 QFP 14x20
Contextual Info: CMRQS/D REV 10 MOTOROLA MICROCONTROLLER TECHNOLOGIES GROUP RELIABILITY AND QUALITY MONITOR REPORT Quarter 1, 1997 Semiconductor Product Sector Test results contained herein are for information only. This report does not alter MotorolaÕs standard warranty or product speciÞcations.

Contextual Info: Reliability Handbook Contents Integrity and Reliability Package Integrity Tests Device Reliability Tests Appendix 1 Calculations Appendix 2 Example of Failure Rate Calculation INTEGRITY AND RELIABILITY ZETEX Semiconductors’ Reliability department routinely performs a variety of industry standard tests on

tsop 928

Contextual Info: QUALITY & RELIABILITY CYPRESS 2001 Q2 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination

mil-std 883d method 1010

Contextual Info: QUALITY & RELIABILITY CYPRESS 2001 Q1 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination

Contextual Info: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C256B datecode

Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Contextual Info: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

Contextual Info: QUALITY & RELIABILITY CYPRESS 2000 Q4 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination

cmos tsmc 0.18

Abstract: reliability data analysis report failure test report
Contextual Info: QUALITY & RELIABILITY CYPRESS 2000 Q3 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination

cmos tsmc 0.18

Contextual Info: CYPRESS QUALITY & RELIABILITY 2000 Q2 RELIABILITY REPORT TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS MANAGEMENT SYSTEM SEMICONDUCTOR 2.0 EARLY FAILURE RATE SUMMARY 2.1 Early Failure Rate Determination 3.0 LONG TERM FAILURE RATE SUMMARY 3.1 Long Term Failure Rate Determination

TOP SIDE MARKING M27C512

Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Contextual Info: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

SGS M27C256

Abstract: TOP SIDE MARKING M27C512 M27C256 SGS-THOMSON mk48t08 BV 726 B m27c mk48t18 SGS M2732A Eprom 2015 static ram CP 1005
Contextual Info: QUALITY & RELIABILITY REPORT October 1996 to September 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

misplaced Wire Bonds

Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Contextual Info: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

F 7849

Abstract: SDRAM operating hour reliability
Contextual Info: NEC ELECTRONICS INC. -DQXDU\ýìäää 754ðääðíìðêìé 16M SDRAM RELIABILITY REPORT This report contains reliability data on the following CMOS Synchronous DRAM product fabricated and assembled at the NEC Electronics Inc. facility in Roseville, California.

MIL-STD-781

Abstract: MIL-HDBK-781 MIL-STD-2068 DI-RELI-80251 MIL-STD-781C MIL-STD-785 MIL-STD-1635 DI-RELI-80250 DI-RELI-80252 MIL-STD-721
Contextual Info: MIL-STD-781 17 October D 1986 SUPERSEDING MIL-STD-781C 21 October 1977 MIL-STD-1635 EC 3 February 1978 MIL-STD-2068 (AS) 21 March 1977 MILITARY STANDARD RELIABILITY TESTING FOR ENGINEERING DEVELOPMENT, QUALIFICATION, AND PRODUCTION I I AMSC N3988 DISTRIBUTION