REGULATOR BH RL Search Results

OMH090

Abstract: OMH090B OMH3019 OMH3020 OMH3075 OMH3131
Contextual Info: High Reliability Hallogic Hall-Effect Sensors OMH090 OMH3019, OMH3020, OMH3040, OMH3075, OMH3131 B, S versions Features: • • • • • • • • Ceramic Package Designed for non-contact switching operations Operates over a broad range of supply voltages

Contextual Info: LTC3704 Wide Input Range, No RSENSETM Positive-to-Negative DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO High Efficiency Operation No Sense Resistor Required Wide Input Voltage Range: 2.5V to 36V Current Mode Control Provides Excellent Transient

Contextual Info: S C S -T H O M S O N $ 7 . IlD M H U K grO M D Igi L200 ADJUSTABLE VOLTAGE AND CURRENT REGULATOR • ADJUSTABLE OUTPUT CURRENT UP TO 2 A GUARANTEED UP TO Tj = 150 °C ■ ADJUSTABLE OUTPUT VOLTAGE DOWN TO 2.85 V ■ INPUT OVERVOLTAGE PROTECTION (UP TO 60 V, 10 ms)

UGN 3140 sensor

Abstract: 3140u UGN-3140U 3140u hall effect switches UGN3140U UGS3140U UGS-3140U UGN 3140u sensor UGN-3140T 50G HALL SENSOR
Contextual Info: I UGN-3140T/U AND UGS-3140T/U SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES U G N -3140T/U A N D U GS-3140T/U U LTR A -SEN SITIV E H A LL EFFECT SW ITCHES FEATURES • • • • • • FUNCTIONAL BLOCK DIAGRAM 4.5 V to 24V Operation High Reliability— No Moving Parts

2N3791

Contextual Info: Üb TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TJ TCHVESO □□DÖ03G 5 m <DISCRETE/OPTO SILICON PNP TRIPLE DIFFUSED TYPE_ _ Unit in mm POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS 0350 max . 0 3 l.OMAX. FEATURES: '— 1 . High Gain and Excellent hpj? Linearity

pentium 4 motherboard schematic diagram

Abstract: DS1M pentium d motherboard schematic diagram
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC5035A Dual P r e c i s i o n V o l t a g e R e g u l a t o r s Features • 16 pin SOIC package Applications • Switchable single/dual power supply for Pentium P54C/ P55C flexible motherboard implementation

OHS3030U

Abstract: OHN3030U
Contextual Info: 0 . O P T EK Product Bulletin OHN3030U May 1996 Hallogic Hall Effect Sensors Types OHN3030U, OHS3030U Absolute Maximum Ratings T a = 2 5 ° C unless otherw ise noted • Operates over a broad range of supply voltages • Excellent temperature stability to

gj hall effect

Abstract: OMH3040B OMH3040S
Contextual Info: 0 .O P I E K Product Bulletin OMH3040 June 1996 High Reliability Hallogic Hall Effect Sensor Types OMH3040B, QMH3040S Features • Lead finish is hot solder dip • Herm etic ceram ic package • Operates over a broad range of supply voltages • Excellent temperature stability to

Contextual Info: D IS C R E T E S E M IC O N D U C T O R S BZD27 series Voltage regulator diodes Product specification Supersedes data of October 1991 File under Discrete Semiconductors, SC01 Philips Semiconductors 1996 Jun 10 PHILIPS Philips Semiconductors Product specification

Contextual Info: 2SK2590 Silicon N-Channel MOS FET HITACHI Preliminary Nov. 1, 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control

Contextual Info: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline Flange

Contextual Info: 2SK2426 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline

Contextual Info: 2SK1625 L , 2SK1625(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK2425 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline

Contextual Info: 2SK1621 L , 2SK1621(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver

Contextual Info: 2SK2174 L , 2SK2174(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline 2SK2174(L), 2SK2174(S)

OHN3131U

Abstract: OHS3131U
Contextual Info: 0 .O P T E K Product Bulletin O HN 3131U M ay 1996 Ultra Sensitive Hallogic Hall Effect Sensors Types OHN3131U, OHS3131U . 182 4 . 6 2 -S IL V E R OR T IN PLATING OVER COPPER LEADS TO W ITHIN .0 40 OF PACKAGE SURFACE .02 (0.51) _ £ .0 1 |» 1 OTE: ( 0 .2 5 )

Contextual Info: 2SK1809 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline

Contextual Info: 2SK2225 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK1540 L (S), 2SK1541(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK1918 L , 2SK1918(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

Contextual Info: 2SK1952 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

Contextual Info: 2SK2212 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Moter Control

Contextual Info: 2SK2075 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low Drive Current • No secondary breakdown • Suitable for Switching regulator Outline 2SK2075 Absolute Maximum Ratings Ta = 25 °C