RECTIFIER T40 Search Results
RECTIFIER T40 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CRG10A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09B | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG11B | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG04A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT | Datasheet |
RECTIFIER T40 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CB50G
Abstract: T70a FULL WAVE RECTIFIER CIRCUITS with scr T500K T30A1 diode A612 full wave rectifier with scr 4 SCR firing SCR 412 SCR 100A 1000V
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cb50g2aa4-12cb70hcb100h2aa4-12+14 | |
MBRI045Contextual Info: INTERNATIONAL RECTIFIER fc.5E D • MflSSMSS DQ171bD 7S3 PD-2.317 International MBR1035 EMIRectifier mbri 045 SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Description/Features The MBR10. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier |
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dq171bdbr1035mbr10-65to150+5 | |
35w4
Abstract: 35w4, tube I960 35w4 tube rs tube tube 35W4 ET-T407C general electric
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et-t407ck-55635w435w4, tube+5 | |
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Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION |
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100JBContextual Info: Rectifier International lORRectifier Die Pre-Passivated Power Rectifier D ie ^ Current Die Part No. Dimenslons Square Inches •F AV) Passivation Voltage Range (V) (A) Equiv. Device Series PD150- 0.150 Silicone Rubber 16 100-1600 6F, 12F, 16F PD180- 0.160 |
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pd150pd180pd210pd280pd3500100jb250jb36mb-a+4 | |
IRFR9220
Abstract: irfu9220 irfu9222 sis 968 dc-dc 522B DNMC IRFR9222 OL-10S 46HA .46HA
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t-37-25c-103irfr9220irfr9222+9 | |
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Contextual Info: INTERNATIONAL RECTIFIER 4ÖSS4S5 GQ1G151 3 • SbE D International Rectifier Rectifiers Fast Recovery T - ô 3-¿2.3 _ Snubber and Free Wheeling Diodes >F AV <@ Tc Part Number Vr r m R18CF25AA R18SF25AA R23DF25AA R23AF25AA R34BF45 R52KF45 2500 2500 2500 2500 |
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gq1g151r18cf25aar18sf25aar23df25aa+3 | |
ior e78996
Abstract: E78996 ior e2711
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gglb32te27114irfk6hc50irfk6jc50+4 | |
Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
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t-63-65triac210-triac350-fd150-+16 | |
R34BF45
Abstract: R23AF25AA 17800 Silicones DO-205AC R18B R18CF25AA R18SF25AA R23DF25AA to323
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gq1g151r18cf25aado-205acr18sf25aa+10 | |
IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
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irf 544 n mosfetspice 2 computer models for hexfets4af2npp irtransistor d586+6 | |
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Contextual Info: INTERNATIONAL RECTIFIER fc.SE » m 4A55452 Q D 1 L.2 S 7 1 SB • INR Bulletin E27101 International lÜ ] Rectifier IRFK3DC50,IRFK3FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. |
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4a55452e27101irfk3dc50irfk3fc50+1 | |
ior e78996Contextual Info: Bulletin 127106 rev. A 08/97 Inte rn ation al I ö r Rectifier T.HF SERIES POWER RECTIFIER DIODES T-Modules 40 A 70 A 85 A 110 A Features • E lectrically isolated base plate ■ Types up to 1600 V RRM ■ 3500 V RMg isolating voltage ■ S im plified m echanical designs, |
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e78996ior e78996 | |
T70HF40
Abstract: T70HF4
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b40hf10b40hf20b40hf40b40hf60+8 | |
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E.78996
Abstract: IR E78996 ir e.78996 E78996 rectifier module E 78996 irke56-04 E78996 IR e78996 78996 F 78996
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b40hf10b40hf20b40hf40b40hf60+16 | |
8563T
Abstract: 40HF 70HF 85HF T110HF T40HF T70HF T85HF T110HF80 T70HF100
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t40hft70hft85hft110hf+9 | |
95313
Abstract: T40hf IFM 204
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t40hft70hft85hft110hf+5 | |
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Contextual Info: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly |
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t40hft70hft85hft110hf+3 | |
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Contextual Info: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly |
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t40hft70hft85hft110hf+3 | |
T85HF
Abstract: 8563T
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t40hft70hft85hft110hf+5 | |
E78996
Abstract: E.78996 E78996 Diode B40HFL40S10 T70HFL100S05 F 78996 78996 E 78996 IRKEL56-06S02 IRKEL56-04S02
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b40hfl10s02b40hfl20s02b40hfl40s02b40hfl60s02+16 | |
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Contextual Info: T40HF80 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition) |
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t40hf80current40voltage600 | |
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Contextual Info: Philips Semiconductors Product specification Rectifier diodes PBYL1525CT, PBYL1525CTB series Schottky SYMBOL FEATURES • • • • • Low forw ard vo lt drop Fast sw itching Reverse surge capability |
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pbyl1525ctpbyl1525ctbl1525c | |
l2525Contextual Info: Philips Semiconductors Product specification Rectifier diodes PBYL2525CT, PBYL2525CTB series Schottky SYMBOL FEATURES • • • • • Low forw ard vo lt drop Fast sw itching Reverse surge capability |
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pbyl2525ctpbyl2525ctbl2525cl2525 | |