RECTIFIER DIODES ON SEMICONDUCTOR Search Results

ADD700S28

Abstract: ADD700
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request

ADD700S28

Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request

ka2645

Abstract: ADS1000
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER SINGLE DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using AlN substrate *Contact screws avaliable on request POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY

AZD1280

Abstract: azd1280s10
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER SINGLE DIODES MODULE - Full hermetic packaging - Base plate insulation uisng AlN substrate - Industrial compatible packaging - Contract screws available on request POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY

AZD780HVI

Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER SINGLE DIODES MODULE - Full hermetic packaging - Base plate insulation uisng AlN substrate - Industrial compatible packaging - Contract screws available on request POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY

AZD1600

Abstract: V100177
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER SINGLE DIODES MODULE - Full hermetic packaging - Base plate insulation uisng AlN substrate - Industrial compatible packaging - Contract screws available on request POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY

AZD930

Abstract: 4500VV V100177
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER SINGLE DIODES MODULE - Full hermetic packaging - Base plate insulation uisng AlN substrate - Industrial compatible packaging - Contract screws available on request POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY

AZD1080

Abstract: AZD1080S28
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER SINGLE DIODES MODULE - Full hermetic packaging - Base plate insulation uisng AlN substrate - Industrial compatible packaging - Contract screws available on request POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY

1708A

Contextual Info: DS 17 DSA 17 Rectifier Diodes Avalanche Diodes V RSM V BR min ① V RRM VRRM = 800 - 1800 V IF(RMS) = 40 A I F(AV)M = 25 A DO-203 AA Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750

marking PM

Contextual Info: MA111 Rectifier Diodes MA2QA01 Tentative Silicon diodes Unit : mm For power rectification 4.4±0.3 ● V R= 400V, IF=1.0A 1 +0.1 0.25–0.05 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 1.2±0.4 +0.4 5.0–0.1 ea s ht e v tp is :// it pa fo na llo so win

Contextual Info: DS 35 DSA 35 Rectifier Diodes Avalanche Diodes V RSM V BR min ① V RRM DSI 35 DSAI 35 VRRM = 800 - 1800 V IF(RMS) = 80 A I F(AV)M = 49 A Anode DO-203 AB Cathode V V V on stud C 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A A 1300 1700 1900

MA114

Abstract: MA2J114 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Rectifier Diodes MA2J114 (MA114) Silicon epitaxial planar type Unit: mm 1.25±0.1 For small power rectification 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features Unit Reverse voltage

MA115

Abstract: MA2J115 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Rectifier Diodes MA2J115 (MA115) Silicon epitaxial planar type Unit: mm 1.25±0.1 For small power current rectification 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d • Three isolated elements are contained in one package, allowing

1000 v fast recovery rectifier diodes

Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564
Contextual Info: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bbSB^Bl 00H705D &&& BIAPX Philips Semiconductors Preliminary specification Fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

BYW97G PH

Contextual Info: N AUER PHIL IPS /DI SCRE TE b b 5 3 c!31 0Q270bD 727 * A P X b^E D Philips Semiconductors Preliminary specification Fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics BYW97F; BYW97G QUICK REFERENCE DATA

Contextual Info: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

BYM26C PH

Contextual Info: b'lE D N AMER PHI LIPS/ DISCRE TE bb53^31 0D57Q1S 7fi3 BIAPX Philips Semiconductors Product specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

Contextual Info: N AUER PHILIPS/DISCRETE b*fE D bb53R31 QQ27QQ7 bQ7 «APX Philips Semiconductors Product specification Very fast soft-recovery avalanche BYD57 series rectifier diodes QUICK REFERENCE DATA DESCRIPTION Glass passivated epitaxial rectifier diodes in hermetically sealed

SOD106A

Abstract: smd diode byg BYG90-40 diode smd marking AA 25 BYG90-20 BYG90-30
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-40 series Schottky barrier rectifier diodes Product specification 1996 May 06 Philips Semiconductors Product specification Schottky barrier rectifier diodes BYG90-40 series FEATURES • Low switching losses

Contextual Info: 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance Ranbir Singh* and Siddarth Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place; Suite 155 Dulles, VA. USA *Ranbir@ieee.org Abstract— Electrical Characteristics of Industry’s first

Contextual Info: N AMER PHILIPS/DISCRETE Philips Semiconductors_ b'lE ]> bbS3^31 DDBbS^b STT » A P X _ Preliminary specification Very fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD81 glass