RECTIFIER 400V B2 Search Results

Contextual Info: Rectifier miniver 1.0 Amp SM1 Case Ratings • ^ jj Type 250 pcs Forward Volt Trr @1.0A Recovery Time Max 100 pc: Max VRRM Max VRMS @ 1.0A 51-4001 51-4004 51-4007 50V 400V 1000V 35V 280V 700V 1.1V 1.1V 1.1V - 51-4936 51-4937 400V 600V 280V 420V 1.3V 1.3V 200nS

SEMISTACK - Thyristor

Abstract: w3c2 B6C Semikube semikron semikube semikron B6C SEMISTACK 323001 Semikube semipack skkt semikron gd-11 semikube
Contextual Info: SEMISTACK - Thyristor SEMIPACK Stack1 Circuit Id / Irms Vac V dc) Types B6C B2C W3C W3C2 159 128 123 123 upto 400V upto 400V upto 400V upto 400V SEMIKUBE Thyristor SEMIKUBE Thyristor SEMIKUBE Thyristor SEMIKUBE Thyristor Symbol Conditions Id (B6C) Tamb= 35°C, no overload

Contextual Info: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF

Contextual Info: IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4266DPbF TO-247AC E n-channel

IGBT gate driver welding

Abstract: IRGP4063D
Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

Contextual Info: IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263DPbF TO-247AC E n-channel

Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 60A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

irgp4063d1

Abstract: IRGP4063D IRGP4063
Contextual Info: IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 62A, TC =100°C G G tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 48A E E n-channel Applica ons • Industrial Motor Drive

0/b40 B2 RECTIFIER 400V

Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
Contextual Info: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C G G IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4266PbF TO-247AC n-channel Applications • Industrial Motor Drive  Inverters

Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters

Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 54A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters

Contextual Info: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

Contextual Info: H E 0 I 4055455 INTERNATIONAL □□□â?âQ □ | Data Sheet No. PD-9.586A RECTIFIER INTERNATIONAL RECTIFIER I « R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFP 3 6 0 IR FP 3 B2 N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET

Contextual Info: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated

DD1056

Abstract: DD1058
Contextual Info: LUCAS STABILITY ELEK LTD '8 1 C fll 00025 D • 5b07013 □□□□055 T ■ L U C B O \ 3 SILICO N D IFFU S ED JU N CTIO N R E C T IF IE R S 8 0 0 -1 3 5 0 V TRA N SIEN T R EV E R S E VO LTAGE DD10S6 DD1058 The D D 1056 and D D 1058 silicon diffused junction rectifiers have an axial lead

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70m max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features  CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

STTB1206G

Abstract: RECTIFIER 400V B2
Contextual Info: STTB1206G  TURBOSWITCHTM ”B” ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 12A VRRM 600V trr (typ) 50ns VF (max) 1.3V A K K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization and rectification.

3A/b40 B2 RECTIFIER 400V

Abstract: PDR3G-13
Contextual Info: SPICE MODEL: PDR3G PDR3G 3A GLASS PASSIVATED RECTIFIER PowerDI ä5 NEW PRODUCT Features • · · · · · Glass Passivated Die Construction Low Leakage Current A D High Forward Surge Current Capability A2 b2 PowerDIä5 L1 Lead Free Finish, RoHS Compliant Note 1

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter