RECTANGULAR RBSOA Search Results

but100

Contextual Info: r Z 7 SGS-THOMSON !LIOT iQOS T # s BUT100 Ä FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA DESCRIPTION Suitable for motor drives, SMPS converters,

BUT102

Contextual Info: r 7 z S ^ 7# C S - T H O M S O N 5 FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ HIGH EFFICIENCY SW ITCHNG VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA D E S C R IP T IO N Suitable for motor drives, SM PS converters, uninterruptable power supply operating low voltage sup­

2 anode igbt inverter circuit diagram

Abstract: VS-EMF050J60U
Contextual Info: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half-Bridge Inverter Stage, 60 A/57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA

HALF-bridge inverter

Abstract: INDICATOR EM c467 VS-EMF050J60U
Contextual Info: VS-EMF050J60U Vishay Semiconductors 3-Levels Half-Bridge Inverter Stage, 60 A/57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA EMIPAK2 • Operating frequency 60 kHz to 150 kHz

VS-EMF050J60U

Contextual Info: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half Bridge Inverter Stage, 60 A, 57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA

VS-EMF050J60U

Contextual Info: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half Bridge Inverter Stage, 60 A, 57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA

tr 30 f 124

Abstract: dec M4 diode VS-EMF050J60U
Contextual Info: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half-Bridge Inverter Stage, 60 A/57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA

VS-EMG050J60N

Contextual Info: VS-EMG050J60N Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz

VS-EMG050J60N

Contextual Info: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA

dec M4 diode

Abstract: VS-EMG050J60N
Contextual Info: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA

k3525

Abstract: brake DIODE GB10RF120K
Contextual Info: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

L500H

Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

GB30RF60K

Abstract: ntc 901
Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: Bulletin I27152 06/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

k3525

Abstract: 8205 datasheet GB10RF120K ice25 ti marking AAB
Contextual Info: Bulletin I27152 Rev.A 07/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

APT0502

Abstract: APTGT50TDU170PG
Contextual Info: APTGT50TDU170PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 E3 G5 E5/E6 IC ICM VGE PD RBSOA E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES

E6 DIODE

Abstract: APTGT50TDU170P DIODE e5
Contextual Info: APTGT50TDU170P Triple Dual Common Source Trench IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA

GB25RF120K

Contextual Info: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics