RECTANGULAR RBSOA Search Results
RECTANGULAR RBSOA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| NDHN200 |
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Rectangular Push Pull IP67 Industrial Ethernet Connector, NDH, Ix Industrial, Bulkhead | |||
| NDHN3B2 |
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Rectangular Push Pull IP67 Industrial Ethernet Connector, NDH, Ix Industrial, Hood + Plug Kit, B Key, Plug with Solder Pad Termination, 8u\\ Gold plating | |||
| NDHN6B2 |
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Rectangular Push Pull IP67 Industrial Ethernet Connector, NDH, Ix Industrial, Bulkhead, Hood + Plug Kit, B Key, Plug with Solder Pad Termination, 8u\\ Gold plating | |||
| NDHN3B1 |
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Rectangular Push Pull IP67 Industrial Ethernet Connector, NDH, Ix Industrial, Hood + Plug Kit, B Key, Plug with Solder Pad Termination, Gold flash plating | |||
| NDHN6B1 |
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Rectangular Push Pull IP67 Industrial Ethernet Connector, NDH, Ix Industrial, Bulkhead, Hood + Plug Kit, B Key, Plug with Solder Pad Termination, Gold flash plating |
RECTANGULAR RBSOA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
but100Contextual Info: r Z 7 SGS-THOMSON !LIOT iQOS T # s BUT100 Ä FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA DESCRIPTION Suitable for motor drives, SMPS converters, |
OCR Scan |
BUT100 but100 | |
BUT102Contextual Info: r 7 z S ^ 7# C S - T H O M S O N 5 FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ HIGH EFFICIENCY SW ITCHNG VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA D E S C R IP T IO N Suitable for motor drives, SM PS converters, uninterruptable power supply operating low voltage sup |
OCR Scan |
BUT102 BUT102 | |
2 anode igbt inverter circuit diagram
Abstract: VS-EMF050J60U
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VS-EMF050J60U 2002/95/EC VS-EMF050J60U 11-Mar-11 2 anode igbt inverter circuit diagram | |
HALF-bridge inverter
Abstract: INDICATOR EM c467 VS-EMF050J60U
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VS-EMF050J60U 2002/95/EC VS-EMF050J60U 11-Mar-11 HALF-bridge inverter INDICATOR EM c467 | |
VS-EMF050J60UContextual Info: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half Bridge Inverter Stage, 60 A, 57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA |
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VS-EMF050J60U E78996 VS-EMF050J60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VS-EMF050J60UContextual Info: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half Bridge Inverter Stage, 60 A, 57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA |
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VS-EMF050J60U E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-EMF050J60U | |
tr 30 f 124
Abstract: dec M4 diode VS-EMF050J60U
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VS-EMF050J60U 2002/95/EC VS-EMF050J60U 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 tr 30 f 124 dec M4 diode | |
VS-EMG050J60NContextual Info: VS-EMG050J60N Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz |
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VS-EMG050J60N 2002/95/EC VS-EMG050J60N 11-Mar-11 | |
VS-EMG050J60NContextual Info: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA |
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VS-EMG050J60N 2002/95/EC VS-EMG050J60N 11-Mar-11 | |
dec M4 diode
Abstract: VS-EMG050J60N
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VS-EMG050J60N 2002/95/EC VS-EMG050J60N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 dec M4 diode | |
k3525
Abstract: brake DIODE GB10RF120K
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I27278 GB10RF120K E78996 k3525 brake DIODE GB10RF120K | |
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Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft |
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I27307 GB20RF60K | |
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Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft |
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I27309 GB50RF60K | |
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Contextual Info: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics |
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I27303 GB30RF60K | |
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Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics |
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I27306 GB15RF60K | |
L500HContextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft |
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I27308 GB10RF60K E78996 12-Mar-07 L500H | |
GB30RF60K
Abstract: ntc 901
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I27303 GB30RF60K 12-Mar-07 GB30RF60K ntc 901 | |
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Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics |
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I27306 GB15RF60K E78996 12-Mar-07 | |
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Contextual Info: Bulletin I27152 06/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics |
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I27152 GB10RF120K E78996 | |
k3525
Abstract: 8205 datasheet GB10RF120K ice25 ti marking AAB
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I27152 GB10RF120K E78996 k3525 8205 datasheet GB10RF120K ice25 ti marking AAB | |
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Contextual Info: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft |
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I27278 GB10RF120K E78996 12-Mar-07 | |
APT0502
Abstract: APTGT50TDU170PG
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APTGT50TDU170PG APT0502 APTGT50TDU170PG | |
E6 DIODE
Abstract: APTGT50TDU170P DIODE e5
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APTGT50TDU170P E6 DIODE APTGT50TDU170P DIODE e5 | |
GB25RF120KContextual Info: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics |
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GB25RF120K indicated360V GB25RF120K | |