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RE1J002YN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RE1J002YNTCL		ROHM	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1.2V DRIVE EMT3FM	Original	PDF		11

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ROHM Semiconductor RE1J002YNTCL MOSFET N-CH 50V 200MA EMT3F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	RE1J002YNTCL	Digi-Reel	14,722		1	1 $0.32 10 $0.19 100 $0.12 1000 $0.08 10000 $0.08	Buy Now
	RE1J002YNTCL	Cut Tape	14,722		1	1 $0.32 10 $0.19 100 $0.12 1000 $0.08 10000 $0.08	Buy Now
	RE1J002YNTCL	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Mouser Electronics	RE1J002YNTCL		2,850			1 $0.32 10 $0.19 100 $0.12 1000 $0.08 10000 $0.05	Buy Now
Newark	RE1J002YNTCL	Cut Tape	3,000		1	1 $0.01 10 $0.01 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
Quest Components	RE1J002YNTCL		10,584			1 $0.50 10 $0.50 100 $0.50 1000 $0.50 10000 $0.09	Buy Now
TME	RE1J002YNTCL		528		1	1 $0.30 10 $0.21 100 $0.12 1000 $0.07 10000 $0.05	Buy Now

Avnet Asia	RE1J002YNTCL			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip Stock	RE1J002YNTCL		162,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	RE1J002YNTCL		21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now

RE1J002YN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: RE1J002YN Nch 50V 200mA Small Signal MOSFET Datasheet lOutline VDSS 50V RDS on (Max.) 2.2W ID 200mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.	Original	RE1J002YN 200mA 200mA 150mW R1120A	PDF
Contextual Info: RE1J002YN RE1J002YN Datasheet Nch 50V 200mA Small Signal MOSFET lOutline VDSS 50V RDS on (Max.) 2.2W ID 200mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.	Original	RE1J002YN 200mA 150mW R1120A	PDF
Contextual Info: RE1J002YN Nch 50V 200mA Small Signal MOSFET Datasheet lOutline VDSS 50V RDS on (Max.) 2.2W ID 200mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.	Original	RE1J002YN 200mA 200mA 150mW R1120A	PDF
Contextual Info: RE1J002YN Datasheet Nch 50V 200mA Small Signal MOSFET lOutline VDSS 50V RDS on (Max.) 2.2W ID 200mA PD 150mW lFeatures (3) EMT3F (1) (2) lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.	Original	RE1J002YN 200mA 150mW R1120A	PDF