RE LOG 6 TZ 61 Search Results

2TZ11

Abstract: 2TZ21 2 TZ 11 relog 2tz11 relog 2 tz 21 2TZ61 RE LOG 6 TZ 61 RE LOG 2 TZ 11 zeitrelais relog
Contextual Info: Bedienungs­ anleitung Elektronische Zeitrelais 2 TZ 11 2 TZ 21 2 TZ 31 2 TZ 41 2 n 61 1. A l l g e m e i n e s Di e elektronischen Zeitrelais der R e i h e 2 TZ bereichs-Einfunktions-Zeitrelais Einsatz ln industriellen Steuerungen. Grundlage m i k r o e 1ektroniseher

Contextual Info: cP DS04-13103-5E FUJITSU DATA SHEET LINEAR IC 6-CHANNEL 8-BIT A/D CONVERTER MB4053 6-CHANNEL 8-BIT A/D CONVERTER SUBSYSTEM The Fujitsu MB4053 is 6-channel, 8-bit, single-slope A/D converter subsystem designed to be used in a microprocessor based data control system. This device provides the analog functions

cxa1465as

Abstract: GXA1465AS HM-TR CXA1464AS G21H Vf20k 48 pins CXA1464AS YIO 98 ZU-J79 1465AS
Contextual Info: S O ± N = j - Y t \ s I C X A 1 4 6 4 A S / 1 4 6 5 A S IffflY /C /v + > ? ‘;WRGB -f > £ 7 1 - í X / B S Ü IE 4HE Œ CXA1464AS/1465AS Ì , N T S C ^ Ä # 7 - r U £ v a fe € ^ « k 3 i, RGB'f tÊ £ IchipK&flf LtzsU 4$ r a n s i t Ä i , h # y b t 7 , IÎ3 IfiiE $ |

RE LOG 6 TZ 61

Contextual Info: ADVANCE MT58LC128K16/18G1 128K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • •

Contextual Info: 64K X 32 Fusion Memory SYNCHRONOUS CACHE RAM FEATURES: . performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with addi­ tional features to accommodate the internal DRAM operation of the memory. These additional features are defined so that

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization

07K300

Abstract: 05K250 lucent technologies Erbium-Doped Fiber Amplifier lucent microelectronics pump laser 980 for APD bias high-voltage DS98-423LWP 1319PC photodiode pin 1319PA Lucent 1319
Contextual Info: Datasheet January 1999 m icr o e le ctro n ic s group Lucent Technologies Bell Labs Innovations 1319-Type High-Speed Lightwave Receiver Features l j|S B • High data rate capability: 2.5 Gbits/s ■ APD or PIN photodetector ■ Fully operational through the 1.3 pm to 1.55 pm

620T DIODE

Abstract: 620T
Contextual Info: FAST CMOS OCTAL BUS TRANSCEIVERS 3-STATE IDT54/74FCT620T/AT/CT IDT54/74FCT623T/AT/CT In te grate d D e vice T echnology, Inc. DESCRIPTION FEATURES: • • • • • • • • • • T h e ID T 5 4 /7 4 F C T 6 2 3 T /A T /C T is a n o n -in v e rtin g octal

SC1741

Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
Contextual Info: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2

Contextual Info: ADVANCE MT58LC64K16/18G1 64K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 64Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • •

Contextual Info: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K SYNCHRONOUS SRAM • • • • • • • • • Fast access time: 7ns Fast OE# access time: 5ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization

Contextual Info: ADVANCE MT58LC128K32/36E1 128K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES 100-Pin TQFP SA-1 # # # # # (fi it oí3Ss! í * ty=*(fi8S* „.ft

DL05L

Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are

Contextual Info: ADVANCE MT58LC128K32/36G1 128K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES * * U û. * Si S > (D N liJliJS S S S liJ o ifl_l>§LU O O O CO O

F24000

Abstract: RE LOG 6 TZ 61 ix1012
Contextual Info: iß National Semiconductor MF6 6th Order Switched Capacitor Butterworth Lowpass Filter General Description Features The MF6 is a versatile easy to use, precision 6th order Butterworth lowpass active filter. Switched capacitor tech­ niques eliminate external component requirements and al­

Contextual Info: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times

Contextual Info: ADVANCE MICRON 256K x 18,128K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM • Q X /M f^ D I in Q T O T I M v D U l l O I MT58LC256K18B4, MT58LC128K32B4, MT58LC128K36B4 SRAM 3.3V Supply, Flow-Through and Burst FEATURES • • • • • • • • •

Contextual Info: ADVANCE MICRON I TECHNOLOGY, INC. MT58L256L18P, MT58L128L32P, MT58L128L36P; MT58L256V18P, MT58L128V32P, MT58L128V36P 4Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock a n d OE# access tim es • Single +3.3V +0.3V/-0.165V p o w er su p p ly V dd

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V V dd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • •

ne616

Abstract: SS 1800R TOKO 455KHz ceramic filter 2SA616 Ceramic filter 455khz NE615 SA616 SA616D SA616DK SA616N
Contextual Info: Product specification Philips Semiconductors Low-voltage high performance mixer FM IF system SA616 PIN CONFIGURATION DESCRIPTION The SA616 is a low-voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •

256L18

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18P, MT55L128L32P, MT55L128L36P; MT55L256V18P, MT55L128V32P, MT55L128V36P 4Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES H ig h frequency an d 100 p ercen t bu s utilization