RD06HVF1 Search Results

rf amplifier broad band

Abstract: RD06HVF1 AN-VHF-026-A
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026-A Date : 22th Nov. 2004 Rev.date : 7th Jan. 2010 Prepared : K.Inaba Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz

MAR 618 transistor

Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

TRANSISTOR mosfet 9V

Abstract: RD06HHF1 RD06HVF1 high power FET Transistor transistor 6w MOSFET RF POWER TRANSISTOR VHF
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS TENTATIVE Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 12.3MIN APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.

transistor d 1557

Abstract: MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RD06HVF1 Marking TRANSISTOR 737 TRANSISTOR mosfet 9V transistor A 564 RD06HVF1-101 a 1712 mosfet mitsubishi symbol marking
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DRAWING 3.6±0.2 9±0.4 4 1.2±0.4 1 For output stage of high power amplifiers in VHF band mobile radio sets.

RD06HVF1

Abstract: 100OHM RD06HVF1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD06HVF1

Abstract: 220uf/25V mitsubishi rf rf amplifier broad band 175mhz 220uF, 25V MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026 Date : 22th Nov. 2004 Prepared : K.Inaba Confirmed : S.Kametani SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz SUMMARY: This application note shows the RF characteristics data for 135MHz-175MHz

Contextual Info: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD06HVF1

Abstract: fet transistor rf RF Transistor s-parameter vhf
Contextual Info: < Silicon RF Power MOS FET Discrete > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING RD06HVF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD06HVF1

Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD100HHF1

Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V