RD02MUS1B Search Results

RD02MUS1B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RD02MUS1B		Mitsubishi	Silicon MOSFET Power Transistor 175MHz,520MHz,2W	Original	PDF	191.21KB	8

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Others RD02MUS1B-T112 RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	RD02MUS1B-T112		1,942			1 $1.88 10 $1.88 100 $1.88 1000 $0.86 10000 $0.79	Buy Now
Mitsubishi Electric RD02MUS1B RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	RD02MUS1B		78			1 $2.50 10 $2.50 100 $1.50 1000 $1.50 10000 $1.50	Buy Now

RD02MUS1B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mosfet 1412 Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 175MHz) 520MHz) mosfet 1412	PDF
RD02MVS1 Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501	PDF
GRM1882C1H5R0CZ01D Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0 Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V	Original	AN-UHF-111 RD00HVS1 RD02MUS1B 400-470MHz, 470MHz. RD00HVS1: RD02MUS1B: 103AJ-G" 400MHz 470MHz, GRM1882C1H5R0CZ01D GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h GRM1882C1H150JA01D RPC05-0R0	PDF
GRM1882C1H330JA01D Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1 Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.	Original	AN-UHF-108-A RD02MUS1B 470MHz, 470MHz. RD02MUS1B: 093AF-G" 400MHz 435MHz LLQ1608-F3N6 300pF GRM1882C1H330JA01D GRM1882C1H101JA01D GRM1882C1H470JA01D GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1	PDF
RD02MUS1B Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems	PDF
RD02MUS1B Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems	PDF
Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than 1.0+/-0.05	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 520MHz	PDF