RCA BIPOLAR TRANSISTORS Search Results

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Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

123AP

Abstract: SK3854/123AP SK3835/103A SK9042 SK9041 SK3846 SK3198 SK3198/131 SK3722 SK3B
Contextual Info: I THOnSON/ DISTRIBUTOR CHE D | “iD2!3Ö73 □□□33b7 Bipolar Transistors cont’d - 2 .° \ •07 Typical Gain Bandwidth Product Casa Style CHARACTERISTICS LIMIT CONDITIONS BREAKDOWN VOLTAGE RCA Type Polarity and Material Device Dissi­ pation Pt W

SK3004

Abstract: SK3052 SK3036 SK3018 SK3027/130 SK3115/165 SK3025/129 SK3006 SK3027 SK3024
Contextual Info: Bipolar Transistors LIMIT CONDITIONS CHARACTERISTICS BREAKDOWN VOLTAGE RCA .Type , Device Dissi­ pation Polarity and Material Pt W — -2. . — -2 — Collector to Emitter Vmo y VCfO V Vbo V -30 -32 -25 -32 -34 -12 -25 -18 -16 -15 -5 -12 -23 " -10 -0.5 Typical Current

RCA 7651

Abstract: Difference between LS, HC, HCT devices RCA-CD4000B ICAN-6525
Contextual Info: Technical Overview FEATURES AC/ACT Family Features The RCA AC/ACT series of Advanced High-Speed CMOS Integrated Circuits is comprised of a broad range of logic types equivalent in performance and speed to FAST, AS Advanced Schottky , and S (Schottky) bipolar types, but

npn transistor w19

Abstract: w19 transistor
Contextual Info: U h # HARRIS HTA2000 SEMICONDUCTOR • RCA • GE • INTERSIL VHF Tile Array June 1990 Advance Information Features Overview • Supported on Harris Bipolar Analog FASTRACK Design System The Harris HTA2000 Tile Array provides the analog system designer with a fast turn, low cost tile array methodology for

Contextual Info: Operational Am plifiers OR H A R R IS U U S E M I C O N D U C T O R HARRIS RCA GE CA3440A, CA3440 INTERSIL May 1990 Nanopower BiMOS Operational Amp • 5 to 15 V supply m Output drives typical bipolar-type loads ■ Low cost 8-lead Mini-DIP, TO-5 The CA3440A and CA3440* are integrated circuit operational

ta9687

Abstract: 10N50A 10n40 10n50 10N40A TA943 10n5 TA9438 RCA 713 TA9437
Contextual Info: Insulated-Gate Bipolar Transistors IGTH10N40 IGTH10N40A IGTH10N50 IGTH10N50A IGTM10N40 IGTM10N40A IGTM10N50 IGTM10N50A IGTP10N40 IGTP10N40A IGTP10N50 IGTP10N50A File N um b er 1697 TERMINAL DIAGRAM N-Channel Enhancement Mode Conductivity-Modulated Power Field-Effect Transistors

RCA 740

Abstract: L6228 OUT1A 69RC L6228D L6228N L6228PD SO24 rca 2022
Contextual Info: L6228 FULLY INTEGRATED STEPPER MOTOR DRIVER PRELIMINARY DATA • OPERATING SUPPLY VOLTAGE FROM 8 TO 52V ■ 2.8A PEAK CURRENT 1.4A DC ■ RDS(ON) 0.73Ω TYP. VALUE @ Tj = 25 °C ■ BUILT-IN DECODING LOGIC ■ BUILT-IN CONSTANT OFF-TIME PWM CURRENT CONTROL

IGBT 20N50

Abstract: 20n50 20N50A RCP20N40 20n40 RCH20N50A RCH20N40A RCP20N50 20N50 HARRIS DIODE 25PH 500
Contextual Info: Insulated-Gate Bipolar Transistors IGTH/IGTM/IGTP20N40 IGTH/IGTM/IGTP20N40A IGTH/IGTM/IGTP20N50 IGTH/IGTM/IGTP20N50A File Number 2174 TE R M IN A L DIAGRAM N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 20 A, 400 V and 500 V

12n08

Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
Contextual Info: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

AN7254

Abstract: rca 549 RFP25N05L AN-7254 AN7260 rca application notes
Contextual Info: Logic-Level Power MOSFETs RFP25N05L File Number 2270 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 25 A, 50 V Tdsloni —0.047 Cl Features: • Design optimized for 5 volt gate drive m Can be driven directly from Q-MOS, N-MOS, TTL Circuits

3 phase PWM ST

Contextual Info: L6208 FULLY INTEGRATED STEPPER MOTOR DRIVER PRELIMINARY DATA • OPERATING SUPPLY VOLTAGE FROM 8 TO 52V ■ 5.6A PEAK CURRENT 2.8A DC ■ RDS(ON) 0.3Ω TYP. VALUE @ Tj = 25 °C ■ BUILT-IN DECODING LOGIC ■ BUILT-IN CONSTANT OFF-TIME PWM CURRENT CONTROL

44222

Abstract: 2N6975 442-22 ic lg 631 2N6976 2N6977 2N6978 S2GS-44222
Contextual Info: Insulated-Gate Bipolar Transistors- 2N6975, 2N6976, 2N6977, 2N6978 File Num ber 2297 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 5 A, 400 V and 500 V Vceom: 2 V T«: 1 /us, 0.5 /j s N-CHANNEL ENHANCEMENT MODE

RFL1N08

Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
Contextual Info: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds

1763S

Abstract: RFM4N35 RFM4N40 RFP4N35 RFP4N40
Contextual Info: □ 1. DE 13fl7SDfll 00 10125 7 38/5081 G É SOLID STATE Standard Power MOSFETs 0 1E 18125 _ RFM4N35, RFM4N40, RFP4N35, RFP4N40 D File Number 1491 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM

RFM7N35

Abstract: RFM7N40 RFP7N35 RFP7N40 ta9398
Contextual Info: 3875081 G E SOLID_ STATE S ta n d a r d P o w e r m ö s f e t s " 01 ' " '_ _ DEf307SDfll 0010133 b RFM7N35, RFM7N40, RFP7N35, RFP7N40 |~~ File N u m b e r Power MOS Field-Effect Transistors 1536 T - s q - i / -t N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: L6208 FULLY INTEGRATED STEPPER MOTOR DRIVER PRELIMINARY DATA • OPERATING SUPPLY VOLTAGE FROM 8 TO 52V ■ 5.6A PEAK CURRENT 2.8A DC ■ RDS(ON) 0.3Ω TYP. VALUE @ Tj = 25 °C ■ BUILT-IN DECODING LOGIC ■ BUILT-IN CONSTANT OFF-TIME PWM CURRENT CONTROL

TA9401

Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
Contextual Info: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors

m 9625

Abstract: RFK35N08 RFK35N10
Contextual Info: DÏ 3875081 G È DËJ 3ö75Qäl SOLID STATE Standard Power MOSFETs □□lflEDS S “ 01E _ _ 18205 RFK35N08, RFK35N10 D T S Ì- IS File Number 1499 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

RFM6N45

Abstract: RFM6N50 RFP6N45 RFP6N50
Contextual Info: Hi 3875081 G E SOLID 3fl7SGfll DOIAIS^ 4 T STATE Standard Power MOSFETs 01E 18129 D r-3 ? -// -_ •39-/3 RFM6N45.RFM6N50, RFP6N45, RFP6N50 File N u m b e r 1494 Power MOS Field-Effect Transistors TERMINAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors

69RC

Abstract: L6227 L6227D L6227N L6227PD SO24 vrca
Contextual Info: L6227 DUAL DMOS FULL BRIDGE MOTOR DRIVER PRELIMINARY DATA • OPERATING SUPPLY VOLTAGE FROM 8 TO 52V ■ 2.8A PEAK CURRENT 1.4A DC ■ RDS (ON) 0.73Ω TYP. VALUE @ Tj = 25 °C ■ BUILT-IN CONSTANT OFF TIME PWM CURRENT CONTROL ■ HIGH SIDE OVER CURRENT PROTECTION

J374

Abstract: RFH35N08 RFH35N10 RFK35N10 RFK35N08
Contextual Info: _~DÏ D Ë J 3Û75DÛ1 D D l ö S O l 3 8 7 5 Ö 8 1 G E SOLID fl J - STATE Standard Pow er M O S F E T s _ 0 1E 18201 RFH35N08, RFH35N10 DT - S ^ ^ I S File N u m b e r 1634 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode

RFK25P10

Abstract: RFK25P08 Ta9412b 015fi RCA bipolar transistors
Contextual Info: Standard Power MOSFETs RFK25P08, RFK25P10 File N u m be r P-Channel Enhancement-Mode Power Field-Effect Transistors 1516 ° 25 A, -100 V — -80 V rDs on : 0.1 5 f i Features: • S O A is p o w e r - d is s ip a tio n lim ite d m N a n o s e c o n d s w itc h in g s p e e d s

RFH12N35

Abstract: RFH12N40 RFM12N35 RFM12N40 RFH12N
Contextual Info: Gl De J BÛ7SGÔ1 O O l ö l t i l 0 3875081 G E SOLID STATE 01E Standard Power MOSFETs 18161 _ File Number 1630 RFH12N35, RFH12N40 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM