RC 548 TRANSISTOR Search Results

2SD536

Abstract: N 555 2SB681 LEM 543 2sb601 2SB552 2SB598 Lem LT 80 p cl 100 hie
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

Contextual Info: MOSEL MSS0151/ 0281 Speech Synthesizer Voice ROM FEATURES DESCRIPTION • Single power can operate at 2 .4 V through 5V . Th e M S S 0281 is a single-chip speech synthesizing C M O S V LS I that can synthesize voice and other sounds up to 2.8 seconds. Th e chip contains most of the necessary circuitry

STK9N10

Abstract: GC233
Contextual Info: r z 7 S C S -T H O M S O N Ä 7# S T K 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK9N10 . . • . . . V dss RoS on Id 100 V 0 .3 Í1 9 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

Contextual Info: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 76 Vf S 400 V k> 3A ^4)S on) 1.8 Si Package Ordering Code TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C

QM10KD-HB

Abstract: EM- 546 motor IO741 t15Q Mitsubishi transistor QM10 QM10K
Contextual Info: ! MITSUBISHI TRANSISTOR MODULES I } QM10KD-HB I } ; ? MEDIUM POWER SWITCHING USE j ; INSULATED TYPE } QM10KD-HB • Ic Collector current. 10A Collector-emitter voltage. 60 0 V • hFE DC current gain. 250

2SD480

Abstract: 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TRANSISTOR SD 2689

Abstract: inverter ic 3524 application mg76 HL 100 Transistor oki cross ambit inverter circuit WinNT40
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG74K/75K/76K 0.15µm Customer Structured Arrays March 2003 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

buv62

Contextual Info: 2 3 Ü 2 3 7 0 0 2 0 7 ^ 1 b • n ^ - 3 3 - I S SCS-THOMSON Ä 7# mm i l L iO T T I ^ Ù f f il lD O l r 7 z s c S G S-TH0MS0N B U V 6 2 30E » FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND

TDC1007J

Abstract: tdc1007 IC STU 404 1007J TRW tdc stu 407 siemens rs 1007 trw 1007 clifford relay TDC-1007J
Contextual Info: Harris Semiconductor No. AN548.1 Harris Linear November 1996 A Designers Guide for the HA-5033 Video Buffer Author: Carl Wolfe Introduction Harris Semiconductor is an industry leader in the high speed, wideband, monolithic operational amplifier market. Due to the high performance of Harris products, designers in

oki cross

Abstract: BGA 27X27 pitch
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG87P3/87P4/87P5 0.25µm Standard Cell August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

MG75M

Abstract: IC ATA 2398 oki cross ARM920T MG73M MG74P MG75P virage virage .spec
Contextual Info: D ATA SHEET O K I A S P RELIMINARY I C P R O D U C T S MG73M/74M/75M 0.16µm Customer Structured Arrays July 2001 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

oki cross

Contextual Info: D ATA SHEET O K I A S I C P R O D U C T S MG87P3/87P4/87P5 0.25µm Standard Cell July 2001 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

j353

Abstract: j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353
Contextual Info: • S ' — h NEC S > v X ^ MOS Field Effect Transistor 2SJ353 P ^ Ÿ T 'v O / M O S F E T v j - x f m 2 S J3 5 3 t è P 3 1 Ÿ * > 'M W M O S F E T 7 \ 5 V t iÜ Ê IC C f t t t i* m m m it : mm 1C * -r ^ 5 1 > ? i f ^-e-r 0 j: > im .iffc < * * ¥ & « :*

AMBIT inverter

Abstract: oki cross MG113P MG115P MG73P MG74P MG75P
Contextual Info: D ATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays July 2001 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

oki cross

Abstract: MG113P MG115P MG73P MG74P MG75P MSI IC application with calculation
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays March 1998 MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit ASIC products are available in both Sea Of Gates

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

Contextual Info: 023SbD5 SIEMENS 00^2034 □ 71 • PROFET BTS4 1 0 G2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • • • • • • • • Overload protection

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

oki cross

Abstract: MG63P MG64P MG65P b0268
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG63P/64P/65P 0.25µm Embedded DRAM/ Customer Structured Arrays November 1998 MG63P/64P/65P 0.25µm Embedded DRAM/Customer Structured Arrays DESCRIPTION Oki’s 0.25 µm MG63P/64P/65P Application-Specific Integrated Circuit ASIC provides the ability to

Triac/TRIAC TAG 92

Abstract: TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90
Contextual Info: SIMM Series Input Modules * 6.2 mm wide and 65 mm deep * DIN Rail mounted * LED input status indicator * Bridges enable quick linking of common voltage * Identification zone on front face * IP20 Part numbers 84145061 84145062 84145064 84145066 84145071 24Vac/dc