RC 05 Z Search Results

UCC2803

Abstract: UC3842 UCC2802QDRQ1 AEC-Q100 Q100 UC3842A UCC2802 UCC2805
Contextual Info: UCC2800/2801/2802/2803/2804/2805-Q1 LOW-POWER BICMOS CURRENT-MODE PWM SGLS121A – JULY 2002 – REVISED MARCH 2003 D D D D D D D D D D Qualification in Accordance With AEC-Q100† Qualified for Automotive Applications Customer-Specific Configuration Control

PSOC LCD 1289

Abstract: dtmf tranmitter 072ps
Contextual Info: CY8C28243, CY8C28403, CY8C28413 CY8C28433, CY8C28445, CY8C28452 CY8C28513, CY8C28533, CY8C28545 CY8C28623, CY8C28643, CY8C28645 PSoC Programmable System-on-Chip Features • ■ ■ ■ ■ ■ Pull-up, pull-down, high Z, strong, or open-drain drive modes

MIL-STD-462C

Contextual Info: MIL-STD-461 EMI INPUT FILTER for 4W up to 50W DC/DC Converters Hi-Rel Hi-Rel Grade Grade 2A EMI Filter Module 9 to 50 VDC Input Range MIL-STD-461C/D/E Compliant • To comply with MIL-STD-461D/E power leads : • CE 102 : Emission requirement over 10 kHz • CS 101 : Susceptibility requirement over 30Hz to 50KHz

ic 9945 a 8 pin

Abstract: triac static switch temic triac dip 16 AY 5 4007
Contextual Info: Temic U2100B S e m i c o n d u c t o r s Timer Control for Triae and Relay Description The tim er control circuit, U2100B, uses bipolar technol­ ogy. It has different mode selections Zero voltage switch, Phase control, Relay control . The output stage is

AS 15 -g

Contextual Info: SLN-176 DC-S.OGHz Low Noise Amplifier Preliminary Data April, 1996 Features 76 Package - Patented G aA s H B T T e c h n o lo g y - Low N oise F igure: 1.5 d B N fo p t at 1.5 G H z - H igh A s so cia te d G a in: 2 7 d B T y p ic a l at 2 G H z - C a sca d a b le 5 0 O h m -1 .5 :1 VSW R Typ

Contextual Info: Tem ic sìiiconix_ SÌ4936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 •DSion) (ß ) I d (A) 0.037 @ VGS = 10 V ±5.8 0.055 @ Vqs = 4.5 V ±4.7 V SO-8 S, |T G, [ T ~ n D, T | D, s2 [ T g 2 i t ~6~| Ü2 T ] D,

MMSD914LT

Abstract: PKSMD-1005-470K-1A BQ24401 bq2000T
Contextual Info: bq24401 Programmable NiCd/NiMH Fast-Charge Management Device Features General Description Ø Safe management of fast charge for NiCd and NiMH Ø High-frequency switching controller for efficient and simple charger design Ø Ø Pre-charge qualification for

OM5326SC

Contextual Info: OM5326SC/RC/DC OM5327SC/RC/DC HERMETIC JEDEC TO-258AA HIGH EFFICIENCY, SOFT RECOVERY CENTER-TAP RECTIFIER 60 Amp, 400 & 600 Volts, 35 nsec trr FEATURES • • • • • • • Small Size Ultra Fast Recovery Soft Recovery Behavior Extremely Low Losses At High Switching Speeds

Z86E30

Abstract: Z86E31 Z86E40
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

TRANSISTOR SMD CODE PACKAGE SOT323

Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
Contextual Info: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.

simple circuit diagram power supply

Abstract: AN-00MX-007
Contextual Info: Ultra Low Noise, ±1 g Dual Axis Accelerometer with Digital Outputs MXD2020U/W FEATURES Resolution better than 1 milli-g Dual axis accelerometer fabricated on a monolithic CMOS IC On-chip mixed mode signal processing 50,000 g shock survival rating 25 Hz bandwidth

J3E diode

Contextual Info: Tem ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary V 'd s V I d « • » S (o n ) ( ß ) (A ) o .l @ V G S = 1 0 V 5 0 .2 @ V G S = 4 .5 V 1 20 L C C -20 Si S i D 2 D 2 G ì D4 D4 G3 S3 S3 Tbp View Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

2N7076

Contextual Info: Tem ic 2N7076 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 200 0.10 28 TO-254AA H erm etic P ackage O Case Isolated DSC, Top View N-Channel MOSFE'I' Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

IRF520 SEC mosfet

Contextual Info: Tem ic Siliconix_IRF520 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (£2) ID (A ) 100 0.3 8.0 TO-22QAB o <J5 DRAIN connected to TAB Ô s G D S Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

RC32 VISHAY

Abstract: crc50
Contextual Info: RCMM Vishay Sfernice Molded Metal Film Resistors FEATURES • 0.25 W to 1 W at 70 °C • NF C 83-230 RC21U-31U-41U-32 • CECC 40 100 • High insulation > 107 MΩ • Great mechanical strength • Termination = Pure matte tin • Compliant to RoHS directive 2002/95/EC

Contextual Info: LNK584-586 LinkZero-AX Zero Standby Consumption Integrated Off-Line Switcher Product Highlights Lowest System Cost with Zero Standby Consumption • Simple system configuration provides zero consumption standby/Power-Down with user controlled wake up • Very tight IC parameter tolerances improves system manufacturing yield

IRFD 110

Abstract: IRFD 640
Contextual Info: Tem ic IRFDllO N-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Œ ) 100 0.60 4-P in D IP G Œ s tr Id (A) 1.0 U a <Jt Top View Ô s N -C hannel M O S F E T Absolute Maximum Ratings (T^ = 25°C Unless Otherwise Noted)

SMD ZENER DIODE 243

Contextual Info: Formosa MS SMD Zener Diode UDZ2.0B THRU UDZ36B List List. 1 Package outline. 2 Features. 2

tc9800

Abstract: CP1128 TC9806 TC9802
Contextual Info: 4. D e v e l o p m e n t F lo w a n d D e v e l o p m e n t S u p p o r t T o o ls 4.1 D e v e lo p m e n t F lo w Figure 4-1 shows the normal PLD development flow. When system and logic designs are complete, the design data m ust be input to the PLD development software.

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

Contextual Info: Alle Rechte Vorbehalten / all rights reserved Teleaärtner K. Gärtner GmbH D—71144 Steinenbronn LerchenstraBe 35 Germany Phone: +49 7157 125-0 Fax: +49 7157 125-120 www.teleqaertner.com Fa Fc a T OJ o o o rc r o. Q O: 3 I—*- Q_ Q CD “i 3 q: w CD OJ

SMW20P10

Abstract: sm 6136 b NS8060 4560D
Contextual Info: Temic SMW20P10 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -1 0 0 0.20 -2 0 TO-247AD G D S l o p View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Sym bol L im it

2SK2146

Abstract: H1 SOT-89
Contextual Info: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

T574D

Abstract: 54HC 74HCT 564C 534LC
Contextual Info: ^ Supertex ine. HCT374 HCT534 HCT564 HCT574 Octal Edge-Triggered Flip Flops Ordering Information Package 20-pin plastic DIP 20-pin CERDIP 20-pin ceramic side-brazed DIP 20-pin ceramic leadless chip carrier Outputs Commercial 74HCT Non-Inverting 74H C T 374P