RBV608 Search Results

D5SB10

Abstract: D5SB40 D5SB20 D5SB60 D5SB80 RBV601G RBV602G RBV604G RBV606G RBV608G
Contextual Info: LESHAN RADIO COMPANY, LTD. RBV601G – RBV608G D5SB10 –D5SB80 6.0A 6.0A BRIDGE RECTIFIERS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave, 60Hz,resistive or inductive load. For capacitive load,derate current by 20%.

RBV-601

Abstract: RBV-606 RBV-602 RBV-606H 606H RBV-604 RBV-608
Contextual Info: Bridge Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. RBV-601 100 RBV-602 200 RBV-604 400 IFSM (A) Tstg (°C) 50Hz With Heatsink Half-cycle Sinewave VF (V) Single Shot max per element 120 1.00

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

S1WB60

Abstract: SIWB RBV-1506 S1WB(A)60B 100C RBV-2506 RBV-602L RBV-604 RBV-606 RBV-606H
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

RBA-401

Abstract: RBA402 RBA-402 LB-156 RBV-602 RBA401 RBV-406 RBV404 lb156 FMM-36S
Contextual Info: RECTIFIER DIODES CENTER-TAP TÏPE MICROWAVE OVEN DIODES Absolute Maximum Ratings Type No. V rm lo I f sm (V) (A) with Fin (A) FMM-22S.R 200 FMM-24S.R 400 FMM-26S.R 600 FMM-31S.R 100 FMM-32S.R 200 FMM-34S.R 400 FMM-36S.R 600 Absolute Maximum Ratings Elee. Char, at 25°C

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

RBV-604

Contextual Info: Bridge Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. RBV-601 100 RBV-602 200 RBV-604 400 IFSM （A） With Heatsink Tj （℃） Tstg （℃） VF （V） 50Hz Half-cycle Sinewave

SIWB

Abstract: btb 137 RBV-1506 S1RBA40 S1WB(A)60B S1WB60 100C RBV-2506 RBV-602L RBV-604
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

Contextual Info: 4-1 Rectifier Diodes ●Bridge VRM V 100 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM max Ta

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

shindengen mr5060

Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A

diode RBV-406M

Abstract: DIODE rbv 602 Diode rbv-408
Contextual Info: 4-1 Rectifier Diodes VRM V IF (AV) (A) Package Axial Values in parentheses are for the products (Body Diameter/Lead Diameter) with heatsinks Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H)

rjp 6065

Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
Contextual Info: Bulletin No O03JF0 （Jan.,2010） 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報

RBV-3006

Abstract: RBV-1306 RBV-602 RBV-1506 RBV-1506J RBV-1506S RBV-601 RBV-602L RBV-604 RBV-606
Contextual Info: 4-1 Rectifier Diodes ●Bridge VRM V 100 IF (AV) (A) Values in parentheses are for the products with heatsinks Part Number Tj (°C) Tstg (°C) VF (V) max IF (A) IR (µA) VR=VRM max IR(H) (µA) VR=VRM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W) Mass (g) RBV-60

FMN-1106S

Abstract: rvb 602 diode ry2a FMN 2206 RBV-3006 ry2a zener diode reference guide RU20x RK1X fmx4202s
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 194 Taping Specifications . 196

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes