RC3403ADB
Abstract: MAX 7910 RV3403ADB RM3503ADC RC3403ADC RC3403 LM324 as wein bridge oscillator RAYTHEON SEMICONDUCTOR RC-350 RAYTHEON
Contextual Info: RAYTHEON^ SEMICONDUCTOR 57 De J 75T73fc>0 □DQ4bO]i 1 | ^ 57C 04 60 1 7 5 9 7 3 6 0 “ RAYTHEON“ CO* P R O D U C T S PEC IFIC ATIO N S Raytheon LINEAR INTEGRATED CIRCUITS Ground Sensing Quad Operational Amplifier Features RC3403A, RC3503A Mask Pattern
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75T73bO
T-79-10
RC3403A,
RC3503A
LM324
MC3403
RC/RV3403A
RM3503A
Q004bll
RG3403A,
RC3403ADB
MAX 7910
RV3403ADB
RM3503ADC
RC3403ADC
RC3403
LM324 as wein bridge oscillator
RAYTHEON SEMICONDUCTOR
RC-350
RAYTHEON
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RC5534NB
Abstract: RC5534ANB RM5534 RC5534ADE RC5534A raytheon RC5534 s7 200 noise Bt141 rc5534
Contextual Info: RAYTHEON-. SEMICONDUCTOR S7 p r o d u c t s p e c ific a tio n s 7 5 9 7 3 6 0 RAYTHEON CO* Raytheon D E | 7 ST 73 bü^ DD0 41 ô 1 û LINEAR INTEGRATED CIRCUITS ' 57C 0 4 6 8 9 High Performance Low Noise Operational Amplifier Features • Small signal bandwidth — 10MHz
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RC5534
10MHz
600X1,
10kHz
200kHz
7ST73t
RC5534NB
RC5534ANB
RM5534
RC5534ADE
RC5534A
raytheon RC5534
s7 200 noise
Bt141
rc5534
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RC3302DB
Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
Contextual Info: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V
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LM139/139A,
239/239A,
339/339A,
RC3302
1N914
73tiO
0470ci
RC3302DB
ic lm 339
RC3302
LM339AJ
av 339
pin for lm 339 ic
lm339n Linear Integrated Circuit
LM2901
LM 339 application note
LM339AM raytheon
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sine wave generator using 741
Abstract: 50 hz notch filter using gyrator IC 741 substitute RC4136 jrc4136 U4136
Contextual Info: RC4136 RAYTHEON/ H E D I 7 S cl 7 3 t j D O Q O b D Ofa fi | Operational Amplifiers ^^ SEMICONDUCTOR RC4136 General Performance Quad 741 Operational Amplifier This amplifier meets or exceeds all specifica tions for 741 type amplifiers. Excellent channel
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RC4136
RC4136
5-00535A
J73bQ
sine wave generator using 741
50 hz notch filter using gyrator
IC 741 substitute
jrc4136
U4136
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Contextual Info: Preliminary Product Specifications ATE and instrumentation Products RC7315/RC7315T Raytheon RC7315/RC7315T Three-State ATE Pi n Electronics Driver Features Applications • High output slew rate 1.8 V/ns typical ■ Wide output voltage range (-2.5V to +7V), and up to
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RC7315/RC7315T
RC7315TEL
AD1322
F-92350
3/93-H-5M
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Contextual Info: Video Product Family TMC22090, TMC22091, TMC22190, TMC22191 Raytheon TMC22090/22091 TMC22190/22191 Digital Video Encoders / Layering Engine The TMC22x9x digital video encoders convert digital computer image or graphics data in RGB, YCbCr , or color indexed format or a CCIR-601
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TMC22090,
TMC22091,
TMC22190,
TMC22191
TMC22090/22091
TMC22190/22191
TMC22x9x
CCIR-601
TMC22091/191.
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RAYTHEON
Abstract: RMWL26001 RMWM26001
Contextual Info: RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,
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RMWM26001
RMWM26001
RAYTHEON
RMWL26001
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4156 amp
Abstract: 741 OP Amp application integrator summing amplifier
Contextual Info: bME D • 7ST73tiD D D D A A E 5 bOl H R T N RAYTHEON/ SEMICONDUCTOR _ RC4156/RC4157 RC4156/RC4157 High Performance Quad Operational Amplifiers Description Features The 4156 and 4157 are monolithic integrated circuits, consisting of four independent high performance
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7ST73tiD
RC4156/RC4157
RC4156/RC4157
7ST73LÜ
4156 amp
741 OP Amp application integrator
summing amplifier
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FD6666
Abstract: ci 741 RC1458 FD6666 equivalent 650-093 741 operational amplifier rs amplifier 741 RC1458DE RC1458H RC1458T
Contextual Info: PRODUCT SPECIFICATIONS Raytheon LINEAR INTEGRATED CIRCUITS General Purpose Dual 741 Operational Amplifier Features • ■ ■ ■ Short c irc u it pro te ctio n No frequ en cy com p en sation required No la tch -up Large com m o n m ode and diffe re ntia l voltage
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RC1458
RM1558
RM1558)
RC1458)
RC1458
RM1558
FD6666
ci 741
FD6666 equivalent
650-093
741 operational amplifier
rs amplifier 741
RC1458DE
RC1458H
RC1458T
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RAYTHEON
Abstract: RMLA3565-58 RO4003 2001 E.F. JOHNSON
Contextual Info: RMLA3565-58 Wideband Low Noise MMIC Amplifier PRELIMINARY INFORMATION Description Features The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no
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RMLA3565-58
RMLA3565-58
RAYTHEON
RO4003
2001 E.F. JOHNSON
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pin diagram for IC RC4558
Abstract: RC4558 4558 lowpass filter CIRCUIT DIAGRAM 4558 lowpass filter RC4558N RC 4558 op amp 4558 OP AMP rc4558 L 4558 op amp schematic
Contextual Info: Raytheon Electronics Semiconductor Division RC4558 Dual High-Gain Operational Am plifier Features • 2.5 M H z unity gain bandwidth • Supply voltage ±22V for RM 4558 and ±18V for RC/RV4558 • Short-circuit protection • N o frequency com pensation required
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RC4558
RC/RV4558
RC4558
7ST73L
7ST73bD
RC4558M
RC4558N
RM4558D
pin diagram for IC RC4558
4558 lowpass filter CIRCUIT DIAGRAM
4558 lowpass filter
RC 4558 op amp
4558 OP AMP
rc4558 L
4558 op amp schematic
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RAYTHEON
Abstract: RMPA27000 power amplifier mmic
Contextual Info: RMPA27000 27 - 29 GHz 1.8 Watt Power Amplifier MMIC Description Features The Raytheon RMPA27000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA27000 is a 3-stage
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RMPA27000
RMPA27000
RAYTHEON
power amplifier mmic
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RAYTHEON
Abstract: Raytheon Company RMDA29100
Contextual Info: RMDA29100 28-33 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMDA29100 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA29100 is a 3-stage GaAs
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RMDA29100
RMDA29100
RAYTHEON
Raytheon Company
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RAYTHEON
Abstract: Raytheon Company RMDA29100 80Au 74072
Contextual Info: RMDA29100 28-33 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMDA29100 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA29100 is a 3-stage GaAs
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RMDA29100
RMDA29100
RAYTHEON
Raytheon Company
80Au
74072
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RAYTHEON
Abstract: RMPA39000
Contextual Info: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier Description Features The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs
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RMPA39000
RAYTHEON
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RAYTHEON
Abstract: Raytheon Company RMWW12001
Contextual Info: RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Description Features The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon
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RMWW12001
RMWW12001
RAYTHEON
Raytheon Company
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RAYTHEON
Abstract: RMPA39100 power supply 1000 watt
Contextual Info: RMPA39100 37-40 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RMPA39100 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39100 is a 3-stage GaAs
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RMPA39100
RMPA39100
RAYTHEON
power supply 1000 watt
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RAYTHEON
Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize
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RMPA61810
RMPA61810
RAYTHEON
Raytheon Company
2 watt rf transistor
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RAYTHEON
Abstract: RMWT11001
Contextual Info: RMWT11001 11-33 GHz Tripler MMIC PRODUCT INFORMATION Description Features The RMWT11001 is an 11 to 33 GHz Tripler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon
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RMWT11001
RMWT11001
RAYTHEON
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RAYTHEON
Abstract: RMWT04001
Contextual Info: RMWT04001 4-12 GHz Tripler MMIC PRODUCT INFORMATION Description Features The RMWT04001 is a 4 to 12 GHz Tripler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon
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RMWT04001
RMWT04001
RAYTHEON
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RAYTHEON
Abstract: RMDA25000
Contextual Info: RMDA25000 23-28 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs
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RMDA25000
RMDA25000
RAYTHEON
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RAYTHEON
Abstract: Raytheon Company 7073 8251 RMPA29100
Contextual Info: RMPA29100 27-30 GHz Power Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMPA29100 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA29100 is a 3-stage GaAs
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RMPA29100
RMPA29100
RAYTHEON
Raytheon Company
7073
8251
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RAYTHEON
Abstract: RMPA39200
Contextual Info: RMPA39200 37-40 GHz 1.6 Watt Power Amplifier MMIC Description Features The Raytheon RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3-stage GaAs
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RMPA39200
RMPA39200
1600theon
RAYTHEON
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BEL 1240
Contextual Info: Raytheon Electronics Semiconductor Division RC4200 A n a lo g M u ltip lie r Features Multiply, divide, square, square root, RMS-to-DC conversion, AGC and modulate/demodulate Wide bandwidth - 4 MHz Signal-to-noise ratio - 94 dB • High accuracy • Nonlinearity-0 .1 %
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RC4200
RC4200
250jlA
RC4200N
RC4200AN
RM4200D
RM4200AD
RM4200AD/883B
ci73LiO
BEL 1240
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