RAYTHEON 12 LEAD Search Results

Contextual Info: b4E î • TSTTBbG RAYTHEON/ GOdóM^ 4bS SEMICONDUCTOR «RTN - TDC1112 TDC1112 Monolithic Digital-to-Analog Converter 12-Bit, 50 Msps, 12 ns Settling Time to 0.1%, 70 dB SFDR Description Features The TDC1112 is a ECL compatible, 12-bit monolithic

Contextual Info: Raytheon Electronics Semiconductor Division T M C 2 24 9 A Digital Mixer 12 X 12 bit, 6 0 MHz Features Applications • • • • • • • • • • • • • • • 60 M Hz input and computation rate Two 12-bit multipliers Separate data and coefficient inputs

2249AH5C

Abstract: TMC2249 TMC2249A LM 2247 B1177 s8l8
Contextual Info: Raytheon Electronics Semiconductor Division TM C2249A Digital M ixer 12 X 1 2 bit, 6 0 M Hz Applications • • • • • • • • • « • • • • • 60 MHz input and computation rate Two 12-bit multipliers Separate data and coefficient inputs

SC 2272 L4

Contextual Info: b4E D • _ TMC2272 7 S c573bO DODfiObfi 7 4T « R T N RAYTHEON/ SEMICONDUCTOR TMC2272 Digital Colorspace Converter/Corrector 36-Bit Color 12 Bits x 3 Components 40 MHz Description A complete set of three 12-bit samples is processed on every clock cycle, with a five-cycle pipeline latency. Full

c1049

Contextual Info: L4E — ß • 7ST73bO RAYTHEON/ □□□7T T S SEMICONDUCTOR TIT ■ RTN - TMC2242 TMC2242 Half-Band Interpolating/Decimating Digital Filter 12 Bits, 40 MHz Description The TMC2242 is a fixed-coefficient, linear-phase halfband low-pass digital filter VLSI circuit which can also

c2255

Contextual Info: Raytheon Electronics Semiconductor Division TM C 2255 CMOS 3 x 3 , 5 x 5 Im ag e C onvolver 8 x 8 Bits, 12 MHz D ata R ate Features Applications 8-bit data and coefficient input precision Triple 3x1 matrix-vector m ultiplication mode 3x3 and 5x5 two-dimensional convolution modes

4565d

Abstract: ic 4565D
Contextual Info: LINEAR INTEGRATED CIRCUITS PRODUCT SPECIFICATIONS Raytheon Complete High Speed 12-Bit Monolithic D/A Converter Features • ■ ■ ■ ■ ■ ■ ■ ■ The DAC-4565S grade guarantees linearity and m onotonicity over the -55° C to +125° C range and is available fully processed to MIL-STD-883,

110n8

Contextual Info: bME D m - RAYTHEON/ SEMICONDUCTOR 75^73^ 0G0ßQ34 3b7 * R T N TMC2249 TMC2249 CMOS Digital Mixer 1 2 x 1 2 Bit, 30 M H z Description The TMC2249 is a high-speed digital arithmetic circuit consisting of two 12-bit multipliers, an adder and a cascadeable accumulator. All four multiplier inputs are

Contextual Info: Raytheon Electronics Semiconductor Division TM C 2272A D igital C o lo rsp a c e C o nverter 3 6 B it C olor, 5 0 MHz Features Applications • 50 MHz 20ns pipelined throughput • 3 Simultaneous 12-bit input and output channels (64 Giga {2 ^ } co]ors) • Two's complement inputs and outputs

cold cathode

Abstract: rs tube
Contextual Info: RAYTHEON TECHNICAL INFORMATION COLD CATHODE GAS - DIODE TYPE S-jX—C- eJ -L .e—n—c s - CK6763 The CK6763 is a ruggedized, instant starting, cold cathode, g a s-fille d , half-wave rectifier of m in­ iature construction suitable for high voltage, low current power supplies up to 12 mAdc output.

Contextual Info: Raytheon Electronics 2.4 GHz GaAs MMIC PA/LNA/Switch Package Data Advanced Information Lead# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 0.075 MAX M A X -l 0.015±0.002 0.055±0.010 • a 0.006±0.001 Jl J0.190±0.005 Ì1 n 0.234±0.005 ■

Contextual Info: Raytheon Electronics Semiconductor Division TMC2242A/TMC2242B Digital Half-Band In t e r p o la t in g / D e c i m a t in g Filter 12-bit ln/16-bit Out, 60 MHz Features • TMC2242A and TMC2242B are pin-compatible with TMC2242 • User selectable interpolate gain, -6 dB or 0 dB 2242B

Contextual Info: Raytheon Electronics Semiconductor Division TM C 2249A D igital M ixer 12 X 12 bit, 60 MHz • 60 M H z in p u t and c o m p u tatio n rate • V ideo sw itching • Tw o 12 -b it m ultipliers • S ep arate d a ta and coefficient in p u ts • Ind ep en d en t, u ser-selectab le p ip elin e d elay s o f 1 to 16

4565d

Abstract: 4565dd 4565d only 8 pin amp op 4565 4565 4565 D DAC-4565DDC DAC-4565J ca 4565 DAC-4565
Contextual Info: PRODUCT SPECIFICATIONS RAYTHEON Complete High Speed 12-Bit Monolithic D/A Converter Features • ■ ■ ■ ■ ■ ■ ■ N o n lin e a rity 1/2 LSB — 0.012% D iffe re n tia l N o n lin e a rity — 0.012% 13 Bits S ettles to 1/2 LSB in 200 nS On C h ip Bandgap V oltage R eference

gsm signal amplifier circuit diagram

Abstract: GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 RMPA1955-99 BW-100
Contextual Info:
 Raytheon Commercial Electronics RMPA1955-99 3V Dual-Band GSM Power Amplifier Module Description The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

RC714CH

Abstract: RC714
Contextual Info: Product Specifications Linear Integrated Circuits RC714 Raytheon RC714 Instrumentation Grade Operational Amplifier Connection Information 8-Lead TO-99 Metal Can Top View Features • ■ ■ ■ ■ Low noise 0.1 Hz to 10 Hz — 0.35 /¿Vp-p Ultra-low Vos — 30 mV

RAYTHEON

Abstract: RMPA1955-99 GPRS Diagram
Contextual Info: RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Tri-band GSM/GPRS Power Amplifier PA Module which uses Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip

jrc4560

Contextual Info: Product Specifications Linear Integrated Circuits Q O j p n | I Ig I P I C f '* O D V w r J RC4560 Raytheon Handle With Care RC4560 Wide-Bandwidth Dual Operational Amplifier Connection Information 8-Lead Dual In-Line Package Top View Features • ■ ■

Contextual Info: Operational Amplifiers LM101A/LH2101A LM101A/ LH2101A General Purpose Operational Amplifier consists of two LM101A ICs in one 16-lead DIP. The units may be fully compensated with the addition of a 30 pF capacitor stabilizing the circuit for all feedback configurations including

OP07S

Abstract: OP-07CT
Contextual Info: Operational Amplifiers OP-07 OP-07 Series Instrumentation Grade Operational Amplifier Connection Information 8-Lead TO-99 Metal Can Top View 8-Lead Dual In-Line Package (Top View) Features • ■ ■ ■ ■ ■ ■ ■ ■ Low noise 0.1 Hz to 10 Hz — 0.35 (J.V^p

0P07D

Abstract: 0po7c OP07S chip 07ad raytheon OP07 OP07DN OP07 Raytheon
Contextual Info: OP-07 Operational Amplifiers OP-07 Series Instrumentation Grade Operational Amplifier Connection Information 6-Lead TO-99 Metal Can Top View 8-Lead Dual In-Line Package (Top View) Features • ■ ■ ■ ■ ■ ■ ■ ■ E D Œ 3 II E U B Low noise 0.1 Hz to 10 Hz — 0.35 jxVp

op070

Abstract: op 070 0po7c 0P07C op07s OP-07 application 0P-07D 0P07D instrumentation amplifier op 07 OP-07AT/883B
Contextual Info: Operational Amplifiers OP-07 OP-07 Series Instrumentation Grade Operational Amplifier Connection Information 8-Lead Dual In-Line Package Top View 8-Lead TO-99 Metal Can (Top View) Features • ■ ■ ■ ■ ■ ■ ■ ■ Low noise 0.1 Hz to 10 Hz — 0.35

LM101AT

Abstract: LH2101A LH2101D LM101AD LM101A
Contextual Info: Operational Amplifiers LM101A/LH2101A LM101A/ LH2101A General Purpose Operational Amplifier consists of two LM101A ICs in one 16-lead DIP. The units may be fully compensated with the addition of a 30 pF capacitor stabilizing the circuit for all feedback configurations including

GSM9004

Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
Contextual Info: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module