RAT 41 Search Results

a 933 transistor

Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Contextual Info: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •

BFG34

Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
Contextual Info: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband

Contextual Info: DATA SHEET BCM5820 eCommerce Processor G EN ER AL DE SC RI PTI O N The BCM5820 is a high performance security processor that provides multi-protocol cryptographic acceleration for VPN and eCommerce applications. The BCM5820 supports all of the symmetric and asymmetric

transistor fp 1016

Abstract: BFQ34T ON4497 transistor 1548 b FP 801 QS 100 NPN Transistor npn transistor dc 558 transistor 828 "NPN Transistor" d 772 transistor
Contextual Info: Product specification P hilips Sem iconductors -T-33-QS NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL BFQ34T SbE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The device features high output voltage

Contextual Info: PRODUCTION SPECIFICATION • BCM5805 Single-Chip Security Processor GENERAL DESCRIPTION FEATURES The BCM5805 Security Processor provides industrystandard IETF IPSec encryption and authentication acceler ation as well as I KE /SS L/TLS key setup acceleration. Engine throughput is over 240 Mbps with

55n10

Abstract: 75n05 60n10 75N06SA 75n06 OM55N10SA OM55N10SC OM60N10SC OM75N05SA OM75N05SC
Contextual Info: OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • •

2322-712

Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Contextual Info: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

QM6001

Abstract: 6004ST diode jr 702 OM6002ST diode t25 4 L0 lateral mosfet audio amplifier OM6001ST OM6003ST OM6004ST OM6101ST
Contextual Info: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • Isolated Hermetic Metal Package

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

1h32

Abstract: diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A
Contextual Info: OM913QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE P-CHANNEL 100V, 10 Am p, P-Channel, Radiation Hardened Power M O SFET In A Herm etic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package

MARKING 74s

Abstract: PF 7004S
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!

OST F35

Contextual Info: samîec F W -3 0 -0 2 -F -D -4 2 S -0 7 5 FW -tO -042-F-D- 250 i 30 F W -1 & - 0 1 - L - D - 3 5 0 - 1 0 0 Low profile and skyscraper styles S P E C IF IC A T IO N S Materials: In sulator M aterial: Black Liquid Crystal Polym er Term inal M aterial: P hosphor Bronze

STK audio power amplifier

Abstract: STK4164MK2 STK 100W stk audio amplifier STK series Sanyo STK STK4144MK2 STK4204MK2 Sanyo STK series Sanyo audio amplifier
Contextual Info: SANYO SEMICONDUCTOR CORP b3E STK WÊÊ D 7 cn ? 0 7 b DDin37 D7b • TSAJ A ud io P o w e r Am plifier STK4144MK2 Series ★ 2 c h . / 1 package, ± Power Supply ★ B u i It-in Self Recovering Protection ★25W/ch. ~ 10OW/ch. ★ T H D = 0. 4% Maximum Ratings

Contextual Info: DB LECTRO Inc. Character 16x4 W H 1 6 0 4 A D/mens/on cfraw/nff 2 .9 5 " 0.6 0 .6 0 .5 5 8 7 .0 ± 0 .5 ~nm~n DOT SIZE 13.6 MAX 9.0 10.0 M A X 5.2 1.6 1.6 LED B /L EL or NO B /L Mec/ian/ca/ Data F e a t u re 1.5x8 dots includes cursor 2. Built-in controller KS 0066 or Equivalent

srf 4230

Contextual Info: VARIABLE COILS .09 jiH thru 1.1 mH 558-7107 .190 Oia. 5.331 1o Cs l i G h T PHOTHgSlON 0* c o il f o r m pos s ible U 480 .137 lyin a*s) l i .010 033 Dla. (4) (0.64) .060 Dia. (2) (1.52) 3O (12.19) RECOMMENDED MOUNTING HOLES ITOL J0.081 025 Oa.(4) (0.64)

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number KL02P32M48SF0 Rev 2.1, 07/2013 KL02P32M48SF0 KL02 Sub-Family Data Sheet Supports the following: MKL02Z8VFG4 R , MKL02Z16VFG4(R), MKL02Z32VFG4(R), MKL02Z16VFK4(R), MKL02Z32VFK4(R), MKL02Z16VFM4(R), and

ecf82

Abstract: PCF82 HA2020 "WF Berlin" G1150 ECF 110 KP 1 TRIODE WF Berlin HA20
Contextual Info: ennblatt Kb Steile Triode-Pentode E/PCF82 (£7O51/£7056 Allgemeine Angaben Die Miniaturröhre (Kovalröhre) E/PCF 82 ist eine Verbundröhre mit Triode und Pentode. Sie ist für die Mischstufe in Fernsehempfängern vor­ gesehen. M a sse 10 Heizung Indirekt geheizte Gxyflkatoäe

Contextual Info: ÔE35LDS 00Û1LM2 SRO SIEMENS BSP 452 M in iS m a rt • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads

Contextual Info: Customer Information Sheet D R A W I N G N o . : M80-4I IXXXX SH E E T 2 OF 2 I IF IN D 0 U 8 T NOT TO S C A L E - ASK THIRD ANGLE P RO JE CT IO N NOTES: I . R E C O M M E N D E D PCB HOLE S I Z E = 0 0 . 6 5 m m M I N. 5.55 MAX MAX ALL D IMENSIONS IN m m

Contextual Info: PL P - 3 0 30W S in g le O u t purt L E D P o w e r S u p p ly | series Fealunes : J U fM etltal A C iiifu l I F J. cage J r i s t d i ; fii: S htrrt eiitjuri: O iw '¿ a a .•O w ■ * L! J 1 - -1 d f t l t ' : ! n C -1 J 'l t . 1 T l * CiXiifigtiykM iircoHcdtA

Contextual Info: THIRD ANGLE PROJECTION I ITEM CODE - - - CAPACITANCEI * F - - - - - - - -~- DIMENSIONS 1 1 ICAPACITANCEI DIMENSIONS L 1 T 1 H 1 F 1 d 1 1 ITEM C0DE μF (*) I L I T I H I F I d ， -ALTERA-Ti ON I I S S U E I DESCRIPTION ム ECWF61030LI 0.01 (103) 112.515.218.0110.01 0.611ECWF62740LI 0.27 (274) 120.5110.4116.7117.510.8

RCA tube 83

Abstract: U50 tube rca tube 58 Oscillator cof RADIOTRON rca company rca tube 26 rca 310 rca 35 tube RCA tube
Contextual Info: 834 R-F POWER AMPLIFIER Filament Thoriated Tungsten 7.5 Voltage a-c or d-c v o lts Current amp. 3-1 Am plification Factor 10.5 D irect Interelectrode Capacitances: 2.6 Grid to Plate JiMf Grid to Filament 2.2 0.6 Plate to Filament Maximum O veral1 Length 6-7/8"

J1CP

Abstract: 6CW 54
Contextual Info: 63 W Sing Is Output LED PowerSupply P L C - 6 0 • F O iU U ffc : ■ U rivtraal A C n p u l I F„ series 'an g* ■ Fii i- sa a t d i A3lie i i s t w 1i t i n m a sock slyleo l l.<; 1 3 1 1 ■ Btii ' -tn Qon lan eurr*n ba llin g cinsi : ■ A d ^ ia t M e o u if u i w t& B e and o m th ii le w

MARKING YA SOT-23

Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
Contextual Info: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim