RAMBUS ASIC CELL Search Results

8251a usart interface from z80

Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
Contextual Info: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design System of NEC. The family allows

NEC V30MX

Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
Contextual Info: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows

HP 54720D

Abstract: PI6C133 PI6C200
Contextual Info: PI6C200-C, PI6C200P, PI6C200-3

NEC obsolete parts

Abstract: NEC rambus dram NEC obsolete parts ic NEC RDRAM 1994 synchronous dram nec RDRAM CONCURRENT Rambus ASIC Cell rambus channel direct rdram rambus 1200 concurrent rdram
Contextual Info: ARCHITECTURAL OVERVIEW This document was created with FrameMaker 4.0.2 Document No. 60291  Copyright 1994 NEC Electronics Inc. All rights reserved. No part of this document may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means without the prior written permission

Contextual Info: «MV. C9820 Direct Rambus Clock Generator Preliminary PRODUCT DESCRIPTION PRODUCT FEA TURES • ■ ■ ■ ■ ■ High Speed Clock support - provides a 400MHz differential clock source for Direct Rambus® memory systems for an 800MHz data transfer rate

Contextual Info: Preliminary Information Direct Rambus® Clock Generator RAMBUS Overview The Direct Rambus® Clock Generator DRCG provides the necessary clock signals to support a Direct Rambus memory subsystem. It includes signals to synchronize the Direct Rambus Channel clock to an

C9801

Abstract: C9850 C9830 C9812 C9822EQ C9851
Contextual Info: APPROVED PRODUCT C9822 Direct Rambus III Clock Generator Product Features Product Description • The C9822 is a Rambus compliant DRCG clock synchronizer. It contains a Phase Locked Loop that provides complimentary Rambus memory clocks. Included in its functionality is the control logic to phase

C9801

Abstract: C9830 C9821 C9850 C9812 C9821GQ C9851 MC9801
Contextual Info: APPROVED PRODUCT C9821 Direct Rambus Plus Clock Generator Product Features Product Description • The C9821 is a Rambus compliant DRCG clock synchronizer. It contains a Phase Locked Loop that provides complimentary Rambus memory clocks. Included in its functionality is the control logic to

Contextual Info: C9820 f llk y JjflMfJflPff .Are-; Direct Rambus Clock Generator Preliminary PRODUCT FEA TURES High Speed Clock support - provides a 400MHz differential clock source for Direct Rambus® memory systems for an 800MHz data transfer rate Synchronization Flexibility - provides signals to

Rambus clock generator

Contextual Info: Direct Rambus Clock Generator ® RAMBUS Overview • The Direct Rambus® Clock Generator DRCG provides the necessary clock signals to support a Direct Rambus memory subsystem. It includes signals to synchronize the Direct Rambus Channel clock to an external system clock. Contained in a 24-pin SSOP

DL010

Contextual Info: Dual Direct Rambus Clock Generator ® RAMBUS Overview The Dual Direct Rambus® Clock Generator DRCG-D provides the necessary clock signals to support a Dual channel Direct Rambus memory subsystem. The DRCG-D is a functional extension of the DRCG and maintains memory channel signal integrity. It includes

Rambus ASIC Cell

Contextual Info: 19 Preface Rambus Inc. has developed a revolutionary DRAM architecture and a very high speed, chip-to-chip inter­ face and data bus - the first interface standard able to be directly implemented on CM OS DRAM s, memory controllers, graphic/video ICs and other high perfor­

CB-C9 macro

Abstract: NZ70008H upd4993 b60c C40C M97C g34c nec 772 uPD71054 22758
Contextual Info: NEC Electronics Inc. CB-C9 3.3-Volt, 0.35-Micron Cell-Based CMOS ASIC Preliminary Description June 1996 Figure 1. System-on-Silicon NEC's CB-C9 CMOS cell-based ASIC family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macrofunctions such as microprocessors, intelligent

RAC RAMBUS

Abstract: RDRAM CONCURRENT concurrent rdram rdram concurrent 72M concurrent RDRAM 72 OF800 concurrent rdram NEC
Contextual Info: NEW PRODUCTS 3 72M-BIT DIRECT RAMBUS DRAM RDRAM µPD488385 Masuo Furuta Vdd Gnd Vref Low-speed bus SIN RAC Controller SOUT SIN RDRAM No.1 VTERM SOUT RDRAM No.n Bus Data Control High-speed bus Receive clock Transmit clock Clock Driver Fig. 1 Outline of Rambus System

Rambus ASIC Cell

Contextual Info: Direct Rambus Clock Generator Features Benefits • High Speed Clock Support Provides 400-MHz differential clock source for Direct Rambus mem­ ory systems for an 800-MHz data transfer rate. • Synchronization Flexibility The CY2211 includes signals to synchronize the clockdomains of the

TC180G21

Abstract: single port ram TC180 TC180G TC160G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3,3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­

Nec concurrent rdram

Abstract: concurrent rdram NEC concurrent rdram CI 7424
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |xPD488170 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description |J The 18-Megabit Rambus DRAM (RDRAM™) Is an extremely-high-speed CMOS DRAM organized a sJM w o r llb y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus S igrgling L o 1 |l% |S L )

rdram clock generator

Abstract: Direct RDRAM clock generator
Contextual Info: ü 16-M egabit RD R A M 2M x 9 Description System Benefits The 16-M egabit Rambus DRAM (RDRAM™) is an extrem ely-high-speed CMOS DRAM organized as 2M w o rd s by 8 or 9 bits an d capable of b u rstin g u p to 256

Contextual Info: J T ~ r ^ ^ r J PRELIMINARY Æ C Y P fìh h S C Y 2211 Direct Rambus Clock Generator Features Benefits • High Speed Clock Support Provides 400-MHz differential clock source for Direct Rambus mem­ ory systems for an 800-MHz data transfer rate. • Synchronization Flexibility

CY2210

Abstract: CY2211 CY2211QC-1 PV991
Contextual Info: jr P V.«LsD.•#» R*1». iÏ* Ï Q Q Pg£ CY2211 By Direct Rambus Clock Generator Features Benefits • High Speed Clock Support Provides 400-MHz differential clock source for Direct Rambus mem­ ory systems for an 800-MHz data transfer rate. • Synchronization Flexibility

SHP32-P-1125-0

Abstract: MSM5718B70 MSM5718B70-50GS-K MSM5718B70-53GS-K MSM5718B70-60GS-K sin ttl RDRAM CONCURRENT MSM5718B7
Contextual Info: ¡ Semiconductor MSM5718B70 ¡ Semiconductor MSM5718B70 E2G1033-17-54 18-Megabit RDRAM 2M ¥ 9 DESCRIPTION The 18-Megabit Rambus DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per

PD-48

Abstract: Rambus RDRAM ASIC PD488170L NEC uPD 833 7b427 RDRAM Reference Manual UPD31443 32b42 RAC RAMBUS NEC BRAC
Contextual Info: BUD-K-0617 April 21, 1994 Office Automation Systems Engineering Department Office Automation Semiconductor Sales Division NEC Corporation RAB2IT-BRAC Outline of Functions <1st Edition» The information contained in this document is being issued in advance of the production cycle

NEC RDRAM 36

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488130L 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

PD488170L

Abstract: NEC Rambus RDRAM cross reference NSN LTE NEC RDRAM 36
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿iPD488170L 18M-BIT Rambus D RA M 1 M - W O R D X 9- BI T X 2 - B A N K Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w ords by 9 bits and capable o f bursting up to 256 bytes o f data at 2 ns per byte. The use of Rambus S ignaling