RAM 2116 Search Results

Contextual Info: inte« 2104A 4096 x 1 BIT DYNAMIC RAM RAM 2104A Max. A ccess Tim e ns 350 Read, W rite Cycle (ns) 500 Max. IDD (mA) 35 • Highest Density 4K RAM Industry Stan­ dard 16 Pin Package ■ Low Power 4K RAM ■ All Inputs Including Clocks TTL Compatible ■ Refresh Period: 2 ms

STATIC RAM 2114

Abstract: RAM 2114 2114 static ram ic EDI8M32512CA RAM 2116
Contextual Info: EDI8M32512CA ^EtECTBOMC E D L DEStGNS WC. m 512Kx32 Static Ram 512Kx32 CMOS, High Speed Static RAM Features The EDI8M32512CA, a high speed, high performance, 16 512Kx32 bit CMOS Static megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs.

M881C4256-70

Abstract: M881C4256 ym 2121 4256-12 2117 RAM
Contextual Info: December 1989 Edition 1.2 FUJITSU DATA SHEET MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Fast Page Mode DYNAMIC RAM The Fujitsu MBS 1C4256 is CMOS fully decoded dynamic RAM organized as 262,144 words x 4 bits.

ST7038

Abstract: COM16 SEG80 Sitronix LCD common driver 6800-4bit LCD display intel 8080
Contextual Info: ST Sitronix ST7038 Dot Matrix LCD Controller/Driver FEATURES 5 x 8 dot matrix possible Support low voltage single power operation: 64 x 8-bit Character Generator RAM CGRAM 80 x 8-bit Display RAM (80 characters max.) 16 x 5 bit ICON RAM Variable instruction functions:

Contextual Info: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits

Contextual Info: 8K x 8 Static RAM W i t h Flash Clear Low L7C186/L7CL186 Pow er DESCRIPTION FEATURES U 8K x 8 CMOS Static RAM with I ligh Speed Flash Clear The L7C186 and L7CL186 are high performance, low pow er CMOS static RAM with a high speed Flash Clear feature. The storage circuitry is organ­

34992

Contextual Info: Reference Virtex Virtex and XC4000X Series FPGAs Each Virtex family has its own unique features to meet different application requirements. All devices have both distributed RAM and block RAM, and between four and eight DLLs for efficient clock management.

34992

Abstract: 33K-100 141-4K 504k 33K100
Contextual Info: Reference Virtex Virtex and XC4000X Series FPGAs Each Virtex family has its own unique features to meet different application requirements. All devices have both distributed RAM and block RAM, and between four and eight DLLs for efficient clock management.

sram 2112

Abstract: 2114 static ram STATIC RAM 2114
Contextual Info: S-22S10R/I 64-word X4-bit parallel NON-VOLATILE RAM The S-22S10R/I is a non-volatile CM OS RAM, co m p o se d of a CM OS static RAM and a non-volatile e le ctrically erasable p ro gram m ab le m em ory E2PROM to backup the SRAM. The organization is 64-w ord x 4-bit (total 256 bits) and the

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

CY62157DV30LL

Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features

CY62157

Abstract: CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features •Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

CY62157CV25

Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Contextual Info: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

KDS 4.000 Crystal

Abstract: KDS 4B 12 MHZ crystal KDS crystal 20.000
Contextual Info: SH67L19A 4K 4-bit Micro-controller with LCD Driver Features SH6610C-Based Single-Chip 4-bit Micro-Controller With LCD Driver ROM: 4K X 16bits RAM: 303X 4bits - 47 System control register - 256 Data memory - 228 bits LCD RAM Operation voltage: 1.2V - 1.7V 24 CMOS Bi-directional I/O pads

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in

Contextual Info: CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese­ lected (CY7C168A The CY7C168A and CY7C169A are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits. Easy memory ex­

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05392 Spec Title: CY62157DV30 MOBL R 8-MBIT (512K X 16) MOBL(R) STATIC RAM Sunset Owner: Ramesh Raghavan (rame) Replaced by: NONE CY62157DV30 MoBL  8-Mbit (512K x 16) MoBL Static RAM This is ideal for providing More Battery Life (MoBL®) in

MN 2114 static ram

Abstract: a12t 2116 static ram LA12T
Contextual Info: LOGIC DEVICES INC BhE D • S S b S T Q S OOOlOafi M ■ _ 8K x 8 Static RAM with Flash Clear Low FEATURES; L7C186/L7CL186 power O iS G R IP T lO N □ 8K x 8 CMOS Static RAM with High Speed Flash Clear □ Auto-Powerdown Design

Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Order this docum ent by MCM69P618A/D MCM69P618A Product Preview 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM The MCM69P618A is a 1M bit synchronous fast static RAM designed to pro­ vide a burstable, high performance, secondary cache for the 68K Family, Pow­

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

intel 2116

Abstract: 2104 RAM intel 2104a SH 2104 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE MZ710 intel 2104
Contextual Info: in t e i" 2104A 4096 x 1 BIT DYNAMIC RAM 2104A M ax. A ccess T im e ns 350 Read, W rite C ycle (ns) 500 35 Max. IDD (m A ) • Refresh Period: 2 ms ■ Highest Density 4K RAM Industry Stan­ dard 16 Pin Package ■ O n -C h ip Latches for Addresses, Chip

Contextual Info: M O TO R O LA SE M IC O N D U C T O R T E C H N IC A L DATA Product Preview O rder this docum ent by M CM69F618A/D MCM69F618A 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM The MCM69F618A is a 1M bit synchronous fast static RAM designed to pro­

d1667

Abstract: PD16675A w0350 40938 memory128 S1119-5 ic 6616 D-1667
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD16675A 1/34，1/36 デューティ RAM 内蔵ドライバ µPD16675A は，フルドット LCD の表示が可能な RAM 内蔵のドライバです。この IC は 1 チップで 128x32 ドッ