74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4hm-6508hm-6518hm-6551+12hm-656174c92974c93074c920hm-6504ram 61646116 ram2116 ram2064 ram4016 ram4045 ram6264 cmos ram
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S1D15605
Abstract: Display Controller S1D15206 S1D15B01 Acc 2089 S1D15202F yd 2030 ic 5 pins S1D15202F00A s1d15208f op amp ua 743
Contextual Info: MF424-21 S1D15000 Series Technical Manual IEEE1394 LCD driverController with RAM S1R75801F00A S1D15000 Series Technical Manual S1D15000 Series Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epson.co.jp/device/
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mf424-21s1d15000ieee1394s1r75801f00a+12i8088i8086s1d15605display controllers1d15206s1d15b01acc 2089s1d15202fyd 2030 ic 5 pinss1d15202f00as1d15208fop amp ua 743
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Contextual Info: DS 2064, DS2064S DALLAS SEMICONDUCTOR DS2064, DS2064S 8K x 8 3V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current 50 nA max at t* = 25°C V cc = 3.0V 100 nA max at tA = 25°C V cc = 5.5V 1 pA max at t^ = 60°C V cc = 5.5V
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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a16685-7emtr1147mcm2018asun hold ras 0610+3cqq 765 rtic hx 710bu256d
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DS2064
Abstract: DS2064S
Contextual Info: DS 2064 DALLAS DS2064 8K x 8 Static RAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Low pow er C M OS design • S tandby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 nA max at tA = 60°C V Cc = 3.0V V Cc = 5.5V V q c = 5.5V □ V cc 27 □ WE
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2064 ram
Abstract: Static RAM 2064 HM3-2064U-5 HM 2064 9 STATIC RAM 16x8 ram 2064 A12C HM3-2064U5 hm3 2064 5
Contextual Info: MHS HM 2064 U AIATRA-HARRIS SEMICONDUCTOR 8K x 8 CMOS STATIC RAM M ilit i liUls? s?lL • ^ n n n n .n n ■ H E U M M M W Features • i DECEMBER 1985 ASYNCHRONOUS • OPERATING SUPPLY CURRENT : 60 mA max • ACCESS TIM E : 120 ns max • DATA RETENTION MODE : 2V, 50 /»A max
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hm3-2064u-5hmt-2064u-52064 ramstatic ram 2064+6hm 2064 9static ram 16x8ram 2064a12chm3-2064u5hm3 2064 5
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Contextual Info: DS 2064 DALLAS DS2064 8K x 8 Static RAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Low pow er C M OS design • S tandby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 nA max at tA = 60°C V Cc = 3.0V V Cc = 5.5V V q c = 5.5V □ V cc 27 □ WE
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Static RAM 2064
Abstract: 2064 eprom
Contextual Info: D S 2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA m ax at 100 nA max at 1 nA m ax at tA = 25°C tA = 25°C tA = 60°C V Cc = 3.0V V Cc = 5.5V V c c = 5.5V Vcc □ WE 3 26 □
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ds2064static ram 20642064 eprom |
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ram 2064
Abstract: t2064 2064 ram Static RAM 2064 ram 2064 150ns
Contextual Info: jy u s HM 2064 U M K i /1/IATRA- HARRIS SEMICONDUCTOR 8K X 8 CMOS STATIC RAM < = y \fc y \ D E C E M B E R 1985 Features • ASYNCHRONOUS • OPERATING SUPPLY CURRENT : 60 mA max • ACCESS TIM E : 120 ns max • DATA RETENTION MODE : 2V, 50 ¡¡.A max • STAND BY CURRENT : 100 ;iA max
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150ns3-2064ut-2064uram 2064+4t20642064 ramstatic ram 2064ram 2064 150ns
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74ABT16244ADGG
Abstract: HB56D472EJ HM5116400AS
Contextual Info: ADE-203-241 Z HB56D472EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Rev. 0 Apr. 20, 1994 The HB56D472EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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ade-203-241hb56d472ej304-word72-bit+516-mbithm5116400ashm514100bs/cs16-bit74abt16244adgg
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74ABT16244
Abstract: HB56D472EJ HM5116400AS Hitachi DSA0088
Contextual Info: HB56D472EJ -6AC/7AC/8AC Preliminary 4,194,304-Word x 72-Bit High Density Dynamic RAM Module Rev. 0.1 Jun. 19, 1995 The HB56D472EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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hb56d472ej304-word72-bit16-mbit+5hm5116400ashm514100cs16-bit74abt16244hitachi dsa0088
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faa11
Abstract: 5118165 d lt 7210
Contextual Info: SIEMENS 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Inform ation • 1 048 576 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access tim e
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32-bit321005s/gs-50/-60i-f1111111111111faa11+25118165d lt 7210
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ram 2064
Abstract: Static RAM 2064
Contextual Info: DS2064 DALLAS SEMICONDUCTOR FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V
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ds2064ds2064s28-pinram 2064+1static ram 2064
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Contextual Info: Fo r t une Semiconductor Corporation 富晶半導體股份有限公司 FS9821 8-bit MCU with 2k program EPROM, 128-byte RAM, 1 low noise OPAMP, 6-ch 14-bit ADC, 4 x 12 LCD driver and RTC. Data Sheet TD-0410030 Rev. 1.5 This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to
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fs9821128-byte14-bittd-0410030+1cr-004
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SRM2064
Abstract: Static RAM 2064
Contextual Info: IK s l I In te gra te d C irc u its In co rp o ra te d 10301 W illo w s Road Redm ond, WA 98052 206 882-3100 TW X 910-443-2302 CMOS 8KX8-01 CMOS 8KX8-03 •/■ a ^ * i a ■ ■ 64K CMOS STATIC RAM g -JQ2 VVORD X 8 BIT a m FEATURES: □ Monolithic Design
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8kx8-018kx8-03100nssrm2064+1static ram 2064
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srm2064
Abstract: CMOS128-03 74SC138
Contextual Info: In te g ra te d C irc u its In c o rp o ra te d 10301 W illo w s Road R edm ond, W A 98052 206 882-3100 TW X 910-443-2302 o I ¿ 0 -0 3 h o o V /M U b CMOS 128-03M ' . .J r X X . . . 128K CMOS STATIC RAM 16,384 WORD X 8 BIT Integrated Circuits incorporated
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128-03m120nssrm2064cmos128-03+174sc138
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2064 ram
Contextual Info: DS2064 DALLAS s e m ic o n d u c to r FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V
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TC5564
Abstract: 8KX8-01 srm2064 8KX8-03
Contextual Info: Iksi i CMOS 8KX8-01 CMOS 8KX8-03 ^ n a •■ 64K CMOS STATIC RAM g -J 02 VVORD X 8 BIT In tegrated C irc u its In co rp o ra te d 10301 W i I lo w s R o a d m R edm ond, WA 98052 206 882-3100 TW X 910-443-2302 - f c . - FEATURES: □ □ □ □ □ □
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Contextual Info: DALLAS DS2064 8K x 8 Static RAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 |iA max at t* = 60°C V cc = 5.5V • Full operation for V cc = 4-5V to 5.5V • Data Retention Voltage = 5.5V to 2.0V
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ds206428-pin2l1413d |
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SRM2064
Abstract: SRM-2064 A-FT-9 ram schematic diagram
Contextual Info: In te g ra te d C irc u its In c o rp o ra te d 10301 W illo w s Road R ed m o n d , W A 98052 206 882-3100 TW X 910-443-2302 CMOS 256-03 W IV IV ^ O O f% £ a q i i ¿ O O - U O lV I 256K CMOS STATIC RAM 32,768 WORD X 8 BIT integrated Circuits incorporated
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120ns256-03msrm2064srm-2064+2a-ft-9ram schematic diagram
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4464 ram
Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT AC H I ID T M ITS U BISHI M OT O R O LA N AT IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH IB A N M O S,
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8816h4464 ramus4k74c930+56116 ram 2k74c9206508 ram4464 memory6164 memory
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srm2064
Abstract: schematic diagram 5.5 VDC POWER SUPPLY A7 U SRM-2064 CMOS128-03
Contextual Info: In te g ra te d C irc u its In c o rp o ra te d ' C M O S 128-03 1030 1 W i l l o w s R o a d R ed m o n d, W A 98052 2 06 882-3100 T W X 910-443-2302 am q W lV IW J O -4 O Q (¿ 0 -U o W I 128K CMOS STATIC RAM 16,384 WORD X 8 BIT FEA TU R E S: □ Low Power Dissipation
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128-03msrm2064schematic diagram 5.5 vdc power supplya7 u+2srm-2064cmos128-03
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AU2064
Abstract: AU1564 AU1564A AU2064A 92348 33708 1209-9
Contextual Info: AU1564/2064 DATA SHEET 6F-3 NO.7, LANE 75, TA-AN ROAD, SEC.1, TAIPEI, TAIWAN, R.O.C. 台北市大安路一段75巷7號6F-3 TEL:886-2-27818277 FAX:886-2-27815779 HTTP://WWW.APLUSINC.COM.TW AU Series ㆒般規格: AU1564, AU1564A, AU2064, AU2064A 乃㆒具有4-bit微處理器之單晶片語音合成
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au1564/20647576f-3au1564au1564a+8au2064au2064alogpcm15204-bit4-bitrom644bits92348337081209-9
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2064 ram
Abstract: DS1259 DS1264
Contextual Info: DALLAS SEM IC ON DU CTOR CORP CHE D | S t m i 3 D 0002313 T | T-¥Z-90 fm Dallas Sem iconductor LCA S m a rtS o c k e t FEATURES D S 1264 DS1264 PIN DESCRIPTION • SmartSocket keeps logic defined in Xilinx/MMI LCA’s in the absence of power GND 9 • Accepts Xilinx/MMI 2064
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ds126468-pint-42-902064 ram+1ds1259
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