RAD HARD PROM Search Results

Contextual Info: PD - 91795 IRHNB7160 IRHNB8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD W , RAD HARD HEXFET 100Volt, 0.040W International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs

IRHNB8160

Abstract: IRHNB7160
Contextual Info: PD - 91795 IRHNB7160 IRHNB8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, RAD HARD HEXFET 100Volt, 0.040Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs

IRHM8450

Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Contextual Info: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

93160

Abstract: IRF P CHANNEL MOSFET 10A 100V IRF P-Channel mosfet irf P-Channel MOSFET audio IRHNA9160 IRHNA93160
Contextual Info: PD -91433A IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -100 Volt, 0.068Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHN9250

Abstract: pcb 200W audio amplifier IRHN93250
Contextual Info: PD - 91300A IRHN9250 IRHN93250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD W , RAD HARD HEXFET -200 Volt, 0.315W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHM9130

Abstract: IRHM93130
Contextual Info: PD - 90888A IRHM9130 IRHM93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHN7450

Abstract: IRHN8450 JANSH2N7270U JANSR2N7270U 2N7270U
Contextual Info: PD - 90819A IRHN7450 IRHN8450 JANSR2N7270U JANSH2N7270U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

2N7268

Abstract: IRHM7150 IRHM8150 JANSH2N7268 JANSR2N7268
Contextual Info: PD - 90675B IRHM7150 IRHM8150 JANSR2N7268 JANSH2N7268 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.065Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

Contextual Info: PD - 91415C IRHM9160 IRHM93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

2n7425

Abstract: IRHM9160 IRHM93160 JANSF2N7425 JANSR2N7425 2N742
Contextual Info: PD - 91415D IRHM9160 IRHM93160 JANSR2N7425 JANSF2N7425 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/660] HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology

Contextual Info: PD - 91839A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57260SE MOSFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.043Ω International Rectifier’s (SEE) RAD HARD technology MOSFETs demonstrate immunity to SEE failure.

IRHNA9064

Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Contextual Info: PD - 91447A IRHNA9064 IRHNA93064 JANSR2N7424U JANSF2N7424U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -60 Volt, 0.045Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRF P CHANNEL MOSFET 10A 100V

Abstract: pcb 480a charge amplifier IRHN9130 IRHN93130
Contextual Info: PD - 90886A IRHN9130 IRHN93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHM9150

Abstract: IRHM93150
Contextual Info: PD - 90889B IRHM9150 IRHM93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

p-chan 10a

Abstract: IRH9130 IRH93130 aval
Contextual Info: PD - 90880A IRH9130 IRH93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

pcb 200W audio amplifier

Abstract: IRHNB7264SE
Contextual Info: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No

Contextual Info: PD - 91447A IRHNA9064 IRHNA93064 JANSR2N7424U JANSF2N7424U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD W , RAD HARD HEXFET -60 Volt, 0.045W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRF P CHANNEL MOSFET 10A 100V

Abstract: transistor IRF 630 IRHF9230 JANSR2N7390
Contextual Info: PD - 91312B REPETITIVE AVALANCHE AND dv/dt RATED IRHF9230 JANSR2N7390 HEXFET TRANSISTOR [REF: MIL-PRF-19500/630] P-CHANNEL RAD HARD W , RAD HARD HEXFET -200 Volt, 0.80W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRH7450

Abstract: IRH8450
Contextual Info: PD - 91807A IRH7450 IRH8450 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

IRHM7230

Abstract: IRHM8230
Contextual Info: PD - 90713C IRHM7230 IRHM8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

IRHM7130

Abstract: IRHM8130 MIL-PRF19500
Contextual Info: PD - 90707B IRHM7130 IRHM8130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

Contextual Info: PD - 90676C IRH7130 IRH8130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

manufacturer list cots radiation

Abstract: RAD HARD TRENCH TRANSISTOR TSMC Flash microcontroller radiation hard cmos cots radiation microcontroller radiation hard datasheet process flow diagram radiation cots cmos Upsets microcontroller radiation tolerance
Contextual Info: Special Feature Rad Hard, Space Ready Case Study: Evolution of a Fab-Independent Radiation-Hardened COTS IC Supplier Even though rad-hard systems are essential in space and tactical military systems, rad-hard semiconductor processes are rare. But what’s even more

IRHM7064

Abstract: IRHM7230 IRHM8064 IRHM8230 91564
Contextual Info: PD - 91564C IRHM7064 IRHM8064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.021Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total