RAD ASIC Search Results

BU-63825

Contextual Info: www.ddc-web.com MIL-STD-1553 Terminals for Space Applications: MODEL:BU-63825 925 and BU-63705 FEATURES: BU-63825(925): BU-63705: • Drop-in Replacement for BU-61582 (83) • Drop-in Replacement for BU-65142 • Rad Tolerant & Rad Hard Versions* • Rad Tolerant & Rad Hard Versions*

manufacturer list cots radiation

Abstract: RAD HARD TRENCH TRANSISTOR TSMC Flash microcontroller radiation hard cmos cots radiation microcontroller radiation hard datasheet process flow diagram radiation cots cmos Upsets microcontroller radiation tolerance
Contextual Info: Special Feature Rad Hard, Space Ready Case Study: Evolution of a Fab-Independent Radiation-Hardened COTS IC Supplier Even though rad-hard systems are essential in space and tactical military systems, rad-hard semiconductor processes are rare. But what’s even more

Contextual Info: Preliminary v1.2 RadTolerant RAD-PAK Field Programmable Gate Arrays Features Radiation Characteristics • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability – Can Improve TID 2-10x Over Standard Package

0116 solar 4 pins

Abstract: RP1280
Contextual Info: Preliminary v1.1 RadTolerant RAD-PAK Field Programmable Gate Arrays Features Radiation Characteristics • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability – Can Improve TID 2-10x Over Standard Package

Contextual Info: Æ ic te ! RadTolerant RAD-PAK Field Programmable Gate Arrays - m Features Radiation • • Characteristics RAD-PAK® Package Technology from Space Electronics, Inc. Improved Total Ionizing Dose TID Survivability - Can Im prove TI D 2-10x Over Standard Package

HR2000

Abstract: HR2010 HR2065 HR2090 HR2210 HR2125 HR2340 "rad" sram
Contextual Info: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

207K AW

Contextual Info: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

HR2065

Abstract: HR2090 HR2010 HR2125 HR2210 HR2340 HR2000
Contextual Info: RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Total Dose Hardness ≥1x106 rad SiO2 • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

honeywell memory sram

Abstract: 419B3E
Contextual Info: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec

TSC695f user

Abstract: sparc v7 ERC32 TSC695 TSC695F
Contextual Info: Rad. Hard 32-bit SPARC Embedded Processor User Guide Table of Contents Section 1 Features. 1-1 1.1 1.2 1.3 1.4 Description .1-2

HCL ME 1014

Contextual Info: Æ 9c t e ! P re lim in a ry RadTolerant RAD-PAK Field Programmable Gate Arrays F e a tu re s R a d ia tio n C h a r a c te r is t ic s • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability - Can Improve TID 2-10x Over Standard Package

Contextual Info: Arrays: MG2RT Radiation Tolerant 0.5–mm CMOS Sea–of–Gates 100k Rad Low Dose Rate Description TEMIC/Matra MHS is the first European supplier for space applications requiring submicronic radiation tolerant CMOS ASICs. optimized for 3 V operation, allowing the operational the

TM1019

Abstract: MG2RTP MATRA MHS, MG2
Contextual Info: Arrays: MG2RTP Radiation Tolerant 0.5 mm CMOS Sea of Gates 100k Rad High Dose Rate Description TEMIC/Matra MHS is the first European supplier for space applications requiring submicronic radiation tolerant CMOS ASICs. This is why TEMIC/Matra MHS keep offering a wide

9240LP

Abstract: 5102ALP AD9240
Contextual Info: PRELIMINARY 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC Memory FEATURES: DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation • Sel converted to reset See Figure 20 • Low power dissipation: 285 mW • Single 5 V supply

9240LP

Contextual Info: 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC Memory FEATURES: DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation • Low power dissipation: 285 mW • Single 5 V supply • Integral nonlinearity error: 2.5 LSB • Differential nonlinearity error: 0.6 LSB

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

MQFP-256

Abstract: MQFP256 ATFS450 MQFP352 ATF280F AT69170 ATF280 LGA rework ATF280F-YF-E D22W-1
Contextual Info: ATF280F Rad-Hard Reprogrammable FPGA DATASHEET Features • SRAM-based FPGA designed for Space use • • • • • • FreeRAM • • • • • • • • • 280K equivalent ASIC gates 14,400 cells two 3-input LUT or one 4-input LUT, one DFF

Contextual Info: Prototyping Microsemi Rad-Tolerant Devices Microsemi™ Prototyping CQFP PACKAGE Aldec RTAX-S/SL Prototyping Adaptors RTAX250S/SL RTAX1000S/SL RTAX2000S/SL RTAX4000S CQ208 CCGA/LGA PACKAGE Aldec and Microsemi have joined together, offering a new, innovative,

atmel 0726

Abstract: OAI22 0.5-um CMOS standard cell library
Contextual Info: Marcom Nantes Technical Document Release Document Identification ✔ Datasheet Application note Manual Errata Sheet Lit.# / Rev.letter Doc. Date 4116J 10/20/2004 Other technical Part Number Product Description MG2RTP Rad Hard 190K Used Gates 0.5 µm CMOS Sea of Gates

honeywell hx3000

Abstract: HX306G HX311G HX303G HX3000 HX314G
Contextual Info: HIGH PERFORMANCE SOI GATE ARRAYS HX3000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.28 µm Leff RICMOS V SOI Process • Maximum Clock Rates >250 MHz • Array Sizes to 1M Usable Gates • Total Dose Hardness ≥3x105 rad(SiO2 )

tag 87

Abstract: ATF697FF EB 203 D AT697 ATF280F AT697F PCI analogic device power 23MFLOPS ATF697FF-ZA-E 0x8000004C
Contextual Info: ATF697FF Rad- hard 32 bit SPARC V8 Reconfigurable Processor DATASHEET Features • SPARC V8 High Performance Low-power 32-bit processor core • AT697F Sparc v8 processor • LEON2-FT 1.0.9.16.1 compliant • 8 Register Windows • Advanced Architecture 5 Stage Pipeline

Contextual Info: DATA SHEET VITESSE FX~MFam ily " " “ SEMICONDUCTOR CORPORATION H igh P erform ance G ate Arrays for M ilitary Applications Features • Superior Performance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, GaAs Enhancement/ Depletion M ESFET Process

ATF697FF

Contextual Info: ATF697FF Rad-Hard 32 bit SPARC V8 Reconfigurable Processor DATASHEET Features • SPARC V8 High Performance Low-power 32-bit processor core  AT697F Sparc v8 processor  LEON2-FT 1.0.9.16.1 compliant  8 Register Windows  Advanced Architecture  5 Stage Pipeline

Contextual Info: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs