RA 220 R DIODE Search Results

Contextual Info: n - n z ÿ ^ t - K Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 Case : HQ-220 400V 8A •fiy -rx •trr50n s •7 J Æ -J U K •S R fflüS 0 y u - 7 U - r iiy *m m . OA, •a«, «g. • Æ tè ü a ra .r n fa RATINGS •¡Ê ë & ll^ ü Ë fë

f3l60u

Abstract: SF3L60U
Contextual Info: Super Fast Recovery Diode Single Diode OUTLINE Package I FTO-220 SF3L60U U n it : m m W e ig h t 1.9« T y p 600V 3A 4.5 Feature •fê S iü Œ 2kVßfiE • • • • • • 7 2 5 1 -r • Switching Regulator • PFC(Power Factor Correction) • ra M ± FRD

IXGN40N60

Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Contextual Info: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES

bts132

Contextual Info: SIEMENS TEMPFET BTS132 VDS = 60 V lD = 24 A ^DS on = 0.065 Q • • • • • N channel E nhancem ent mode Logic level Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B ') O bserve circ u it design hints (see chapter Technical Inform ation)!

BTS 110

Contextual Info: Sf E M E U S TEMPFET BTS110 VDS = 100 V lD = 10 A ^DS on = 0-2 O • • • • N channel Enhancem ent mode Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see chapter Technical Inform ation)!

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his pro d u ct is N -C han ne l M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 305 3 Isolated T O -220 d e sig n e d for high cu rre n t sw itch ing ap plicatio ns.

Contextual Info: S IE M tfS IS TEMPFET VDS lD ^ D S o n • • • • • BTS131 = 50 V = 25 A = 0.06 O N channel E nhancem ent mode Logic level Tem perature sensor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see cha pter Technical Inform ation)!

F20F6N

Abstract: 2SK2287
Contextual Info: 6 0 V v'J-X A^-MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case I FTO-220 2SK2287 F20F6N 60 v 20 a ■ R A T IN G S ■ ÎÊ ÎÎÎi^ S Ë fê A b s o lu te m M a x im u m Item -V ^ C h annel T e m p e ra tu re * v - x t l D r a in -S o u rc e V o lta g e

tunnel diodes

Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Contextual Info: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance

Contextual Info: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization

Contextual Info: vS ü y TZMB. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • V e ry s h a rp re v e rs e c h a ra c te ris tic • L o w re ve rs e c u rre n t level • A v a ila b le w ith tig h te r to le ra n c e s • V e ry high s ta b ility

LL55C

Contextual Info: LL55C Series Voltage Range 2.4 to 75 Volts Zener diode Glass Case Mini Melf/SOD 80 Features JEDEC DO -213A A 1.Small surface mounting type 2.High reliability Applications Cathode band Voltage stabilization Ö - in+ Construction is 1 Silicon epitaxial planar

Contextual Info: BZX55C2V4 FORWARD INTERNATIONAL ELECTRONICS LID. SEMICONDUCTOR TECHNICAL DATA THRU BZX55C39 TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FE A TU R E S ' Vo l t age R a n g e : 2 . 4 V t o 3 9 V * Do u b l e sl ug t y p e c o n s t r u c t i o n DO-34/DO-35

Contextual Info: r z 7 < •^ 7 # S C S -T H O M S O N « l 5 iam iiiSTO<B M iBS BYW 200 A 8 0 -5 0 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES ■ VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE

Contextual Info: 5bE D • 7^237 GGHm? f Z 7 SCS-THOMSON Ä 7# s6 [* ^ i^ O T Q * S ÒSI ■ S 6 T H T-03-tf s -th ohs on B Y W 5 1 - 5 0 A -> 2 0 0 A HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES ■ VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY

DIODE Z1235

Abstract: Z1235 DIODE BZX 24 DIODE BZX 35 DIODE BZX 62 15 BZX DIODE bzx 18 bzx c12 DIODE Z1235 silicon type DIODE BZX
Contextual Info: BZX97 Silicon Z diode for 500 m W BZX 97 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.

B2X55C

Abstract: BZX 55 C 5V 8 bzx 8v2 ZENER bzx 46 c 43 55C8V2 BZX 3,3 B2X55 ZX 25
Contextual Info: r z 7 SGS-THOMSON LlOTOiDOS BZX 55 C 0V8 -> 200 ^ 7# 5 ZENER DIODES • . ■ ■ LARGE VOLTAGE RANGE : 0.8V TO 200V DOUBLE SLUG TYPE CONSTRUCTION PRO ELECTRON REGISTRATION CECC FOR TYPES : 2.7V TO 62V level quality assessment : L DESCRIPTION 500mW hermetically sealed glass silicon Zener

H467

Contextual Info: MICRO QUALITY / S E M IC O N D U C TO R . INC. High Voltage Rectifier Assemblies For X-Ray Apparatus H466 H467 H468 Micro Quality Sem iconductor, Inc. has designed this series of high voltage rectifier assem blies for use in X-R ay applications. Th e number of diodes m ounted in series

Q62702-Z686

Abstract: z682 Z848 z688 bzx c36 Q62702-Z683 Q62702-Z851 Q62702-Z693 z850 Q62702-Z692
Contextual Info: BZX55 Silicon planar Z-Diode BZX 55 is a silicon planar Z -d io d e in a glass-case 51 A 2 DIN 418 8 0 D O -7 , for stabilizing and lim itin g voltages as w e ll as fo r generating reference voltages at low pow er requirements. The planar technique ensures a very lo w reverse current level,

Contextual Info: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310

Contextual Info: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package

ESDA6V8

Abstract: WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode ESDA14V2 ESDA25 WOSD12
Contextual Info: W EITRON TECH NO LOG Y TVS I ESD Protection Diode PPK C Ir 8 /2 0 ms (pF) @V rwm (W) Typ (MA) 300 20 220 20 190 5.0 13.3 150 4.0 5.0 600 1.0 20 WOSTOSC 5.0 6.1 WOSTO8C 8.0 8.5 WOST12C 12.0 WOST15C 15.0 ESDA5V3 V rwm V br (V) (V) WOST04 4.0 5.0 WOSTOS 5.0

Contextual Info: SLOTTED OPTICAL SWITCH OP T O E L E C T R O N I C S QVA SERIES PACKAGE DIMENSIONS SEE NOTE 3 DESCRIPTION Th e QVA series of switches is designed to allow the user V I I m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN

DIODE RK 306

Abstract: 1ZB200 1ZB20 zener
Contextual Info: T O S H IB A 1 Z B 6 .8 -1 Z B 3 9 0 TO SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8-1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package