R5 DIOD Search Results

R5478

Contextual Info: Li-ION/POLYMER 1CELL PROTECTOR No. EA-291-121009 R5 4 7 5 N /R5 4 7 8 N SERI ES OUTLINE The R5475N/R5478Nxxxxx Series are high voltage CMOS-based protection ICs for over-charge/discharge of rechargeable one-cell Lithium-ion Li+ / Lithium polymer excess load current, further include a short circuit

IRHNJ53230

Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Contextual Info: PD - 93753 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)

IRHF57234SE

Contextual Info: PD - 93831 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42Ω ID 5.4A TO-39 International Rectifier’s R5TM technology provides

IRHM57264SE

Abstract: 254 DIODE
Contextual Info: PD - 93798A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254 IRHM57264SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides

IRHNJ57Z30

Abstract: IRHNJ53Z30 IRHNJ54Z30 IRHNJ58Z30 el 803 s
Contextual Info: PD - 93751A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30

IRHNJ53130

Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130 93754B
Contextual Info: PD - 93754B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

Contextual Info: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides

IRHNJ57234SE

Abstract: smd diode 64A
Contextual Info: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides

ST60P

Abstract: 20pf 1N60P 1N60S
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm

ST60P

Abstract: 20pf 1N60P 1N60S
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm

IRHM57260SE

Contextual Info: PD - 93880C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A* TO-254AA International Rectifier’s R5 TM technology provides

IRHF57133SE

Contextual Info: PD - 94334A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57133SE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57133SE 100K Rads (Si) RDS(on) ID 0.1Ω 10.5A TO-39 TM International Rectifier’s R5 technology provides

motor IG 2200 19 00001

Abstract: IRHNA53260 IRHNA54260 IRHNA57260 IRHNA58260 12v dc motor IG 2200 19
Contextual Info: PD - 91838C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57260 100K Rads (Si) IRHNA53260 300K Rads (Si) RDS(on) 0.038Ω 0.038Ω ID 55A 55A IRHNA54260 0.038Ω

mosfet motor dc 48v

Abstract: IRHNA53064 IRHNA54064 IRHNA57064 IRHNA58064
Contextual Info: PD - 91852D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57064 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHNA57064 100K Rads (Si) 0.0056Ω IRHNA53064 300K Rads (Si) 0.0056Ω ID 75*A 75*A IRHNA54064

IRHNA53Z60

Abstract: IRHNA54Z60 IRHNA57Z60 IRHNA58Z60
Contextual Info: PD - 91787E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57Z60 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID IRHNA57Z60 100K Rads (Si) 0.0035Ω 75*A IRHNA53Z60 300K Rads (Si) 0.0035Ω 75*A IRHNA54Z60

R4389

Abstract: R24 smd SMD resistors R27 rectifier R17 ISL55036 ISL55036EVAL1Z SMD RESISTOR r36
Contextual Info: ISL55036EVAL1Z Evaluation Board User’s Guide Application Note April 17, 2008 AN1395.0 Introduction • ISL55036EVAL1Z Reference Documents • ISL55036 Data Sheet, FN6640. R5 V+ 1, 2, 3 DNP Ordering Information R1 DNP C8 V+OUTPUT (4, 5, 6) 0.1µF DNP

IRHM57260SE

Contextual Info: PD - 93880B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A* TO-254AA International Rectifier’s R5 TM technology provides

1N60P

Abstract: ST60P 1N60S 20PF
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1

24v 12v 10A regulator

Abstract: IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

mosfet motor dc 48v

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

IRHF53230

Abstract: IRHF54230 IRHF57230 IRHF58230
Contextual Info: PD - 93788 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57230 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57230 100K Rads (Si) IRHF53230 300K Rads (Si) RDS(on) 0.22Ω 0.22Ω ID 7.3A 7.3A IRHF54230 600K Rads (Si)

IRHM53160

Abstract: IRHM54160 IRHM57160 IRHM58160
Contextual Info: PD - 93784C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57160 100V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57160 100K Rads (Si) IRHM53160 300K Rads (Si) RDS(on) 0.018Ω 0.018Ω ID 35A* 35A* IRHM54160 600K Rads (Si)

IRHY53230CM

Abstract: IRHY54230CM IRHY57230CM IRHY58230CM 20v 1-3A
Contextual Info: PD - 93827 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57230CM 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHY57230CM 100K Rads (Si) IRHY53230CM 300K Rads (Si) RDS(on) 0.20Ω 0.20Ω ID 13A 13A IRHY54230CM 600K Rads (Si)

IRHM53260

Abstract: IRHM54260 IRHM57260 IRHM58260
Contextual Info: PD - RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA 91862A IRHM57260 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57260 100K Rads (Si) IRHM53260 300K Rads (Si) RDS(on) 0.044Ω 0.044Ω ID 35A* 35A* IRHM54260 600K Rads (Si)