R5 DIOD Search Results

R5478

Contextual Info: Li-ION/POLYMER 1CELL PROTECTOR No. EA-291-121009 R5 4 7 5 N /R5 4 7 8 N SERI ES OUTLINE The R5475N/R5478Nxxxxx Series are high voltage CMOS-based protection ICs for over-charge/discharge of rechargeable one-cell Lithium-ion Li+ / Lithium polymer excess load current, further include a short circuit

MBN1800E17D

Contextual Info: Spec.No.IGBT-SP-02006 R5 IGBT MODULE MBN1800E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.

Contextual Info: Spec.No.IGBT-SP-02008 R5 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.

251AA

Abstract: 2VQ03CT 2VQ03CTF 2VQ04CT 2VQ04CTF
Contextual Info: SCHOTTKY BARRIER DIODE 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF 2.2A/30—40V ' 6.4 .252t ' , 5.351211 1.271.05) MAX r5 .0 5U 9 9) FEATURES •TO-251AA Case I •T0-252AA Case, Surface Mount Device I 2.38MAX (.094) 2.3SMAX (.094) A 7 6.22(.245) 5.98(.235) 0.9C035)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03010 R5 MBN1600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

Contextual Info: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 3 0 6 VCO FOR UHF BAND RADIO Small Package U ltra Low Series Resistance : r5 = 0 .2 0 0 Typ. MAXIMUM KÄliNüS i i a = 2b°Lj SYMBOL CHARACTERISTIC Reverse Voltage

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

IRHNJ53230

Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Contextual Info: PD - 93753 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)

IRHF57234SE

Contextual Info: PD - 93831 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42Ω ID 5.4A TO-39 International Rectifier’s R5TM technology provides

Contextual Info: PD - 93880 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.044Ω 35A* TO-254AA International Rectifier’s R5TM technology provides

Contextual Info: PD - 93752 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034

Contextual Info: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides

IRHNJ57230SE

Abstract: smd diode 78a
Contextual Info: PD - 93836 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57230SE 100K Rads (Si) RDS(on) 0.22Ω ID 12A SMD-0.5 International Rectifier’s R5TM technology provides

IRHNJ57Z30

Abstract: IRHNJ53Z30 IRHNJ54Z30 IRHNJ58Z30 el 803 s
Contextual Info: PD - 93751A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30

Contextual Info: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides

Contextual Info: PD - 93831 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42Ω ID 5.4A TO-39 International Rectifier’s R5TM technology provides

Contextual Info: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides

Contextual Info: PD - 93754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

IRHNJ53130

Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130 93754B
Contextual Info: PD - 93754B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

Contextual Info: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides

Contextual Info: PD - 93798 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254 IRHM57264SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides

mosfet motor dc 48v

Abstract: IRHNJ54034 IRHNJ57034 IRHNJ58034 IRHNJ53034
Contextual Info: PD - 93752A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034

IRHNJ57234SE

Abstract: smd diode 64A
Contextual Info: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides