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    R2M DIODE Search Results

    R2M DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    R2M DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode r2m 26

    Abstract: diode r2m HP 2530
    Contextual Info: R2M / RY2 / RUC Industrial Electromagnetic Relays ● Relays of general application ● For plug-in sockets, 35 mm rail mount or on panel mounting ● Cadmium-free contacts ● R2M and RUC also for PCB and soldering connections ● AC and DC coils available


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    e105728diode r2m 26diode r2mhp 2530 PDF

    Contextual Info: Industrial relays 105 Industrial relays Miniature industrial relays Industrial relays of small dimensions 106 R3 . 111 R4 . 115 RY2 . 120 R2M . 124


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    rs35-3022-25-1005rs50-3022-25-1110 PDF

    R2M diode

    Abstract: Diode R2M std 202e 202E
    Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. R2M OVER VOLTAGE PROTACTION DIODE TECHNICAL SPECIFICATION BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A FEATURES DO - 15 • Excellent clamping capability • Low incremental surge resistance • High temperature soldering guaranteed:


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    35-150v250oc/10s/9ul-94100oc+515typr2m diodediode r2mstd 202e202e PDF

    Diode Zener R2M

    Abstract: R2M zener diode
    Contextual Info: R2M AVALANCHE DIODE D2 V RM : 130 Volts IZSM : 1.0 Amp. 100 µ s 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : * * * * 600 W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less than 1.0 ps from 0 volts to BV min.


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    ul94v-omil-std-202diode zener r2mr2m zener diode PDF

    ZENER R2M

    Abstract: Diode Zener R2M R2M zener diode R2M diode diode r2m 26 R2M 45 zener Diode R2M R2M 45 r2m 41- zener diode R2M* Avalanche Diode
    Contextual Info: R2M AVALANCHE DIODE D2 V RM : 130 Volts IZSM : 1.0 Amp. 100 µ s 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : * * * * 600 W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less than 1.0 ps from 0 volts to BV min.


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    ul94v-omil-std-202zener r2mdiode zener r2m+8r2m zener dioder2m diodediode r2m 26r2m 45 zenerdiode r2mr2m 45r2m 41- zener dioder2m* avalanche diode PDF

    ZENER R2M

    Contextual Info: AVALANCHE ZENER DIODES WITH B I ILT-IN THYRISTOR AVALANCHE ZENER DIODES Absolute Maximum Ratings (TA=25°C) V rm Type No. IzSM W VZ (V) Ir V rm (A) Instantaneous Instantaneous <h A) m Current Max. Max. (V) Current RM25 40 50 3.0 60 to 70 5 20 1.0 135 to 180


    OCR Scan
    rz1030rz1065rz1200rz1225+7rz1175rz1125rz1150pz227pz427pz628zener r2m PDF

    ZENER R2M

    Abstract: RY24 ZENER R2M 30 R2M zener RM25 RY23 PZ628 RM26 z127 PZ-628
    Contextual Info: AVALANCHE ZENER DIODES WITH BUILT-IN THYRISTOR AVALANCHE ZENER DIODES Absolute Maximum Ratings (TA=25°C) IzSM (A) Vz (V) (A) 1mA Instantaneous Instantaneous (HA) (HA) Current Max. Max. V rm Type No. (V) Current RM25 40 Ir V rm 50 3.0 60 to 70 5 20 130 1.0


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    rz1030rz1055rz1065rz1100+12rz1125rz1150zener r2mry24zener r2m 30r2m zenerrm25ry23pz628rm26z127pz-628 PDF

    Socket Accessories

    Contextual Info: Mounting and sub-assemblies 240 of the relay and accessories in the socket Signalling / protecting module type M. Electromagnetic relays Removing the relay from the socket with a retrainer / retractor clip Retainer / retractor clip Description plate Screw terminals


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    gzt80gzt92gzm80gzm92+7gzs80gzs92gzt80-0040gzs-0040gzt4-0040gzt80-0035socket accessories PDF

    BU508A

    Abstract: BU508D transistor d 1991 ar T1185 philips bu508a transistor Bu508A
    Contextual Info: N AMER PHILIPS/DISCRETE blE D • bb£3^31 D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed sw itching npn tran sisto r in S O T 93A envelope intended fo r use in h o rizontal d e flectio n c irc u its o f co lo u r television receivers. T he BU 508D has an integrated e fficien cy diode.


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    d02a2b4bu508abu508dot93a+4transistor d 1991 art1185philips bu508atransistor bu508a PDF

    GZ80

    Abstract: PW80 Diode R2M gw96 R2M diode rm84 ES50/3 gz92 RM85 RM87N
    Contextual Info: 137 Sockets and accessories availability index RELAY Modules available with Sockets Solder terminals socket PCB terminals socket Screw terminals socket Retainer/ retractor clip Description plate RM84 – GW80, PW80 GZ80, ES50/3 GZ80, ES50/3 MS16 TR RM85 –


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    es50/3105ocrm87nrm87l+8gz80pw80diode r2mgw96r2m dioderm84gz92rm85 PDF

    in6263

    Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013
    Contextual Info: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE


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    opa660850mhz660-1gc470pf+101n4007in6263coil gold detector circuit diagramr2m diodetransconductance amplifier spiceopa660auref2002n2907buf601opa1013 PDF

    BDV66D

    Abstract: BDV68 BDV68C BDV66C A11T darlington pair transistor BDV66A BDV67A M0433
    Contextual Info: BDV66A; B _ JI BDV66C; D PHILIPS INTERNATIONAL SbE D • 711002b 0043370 S41 * P H I N ~ r -3 3 -y i DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching


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    bdv66abdv66c711002bm04337fl+9t-33-3bdv67at-33-31bdv66dbdv68bdv68ca11tdarlington pair transistorm0433 PDF

    J295

    Abstract: BU705 BU705D
    Contextual Info: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency


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    711qfihtbu705bu705dt-33-p+2ot93aj295 PDF

    IN6263

    Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007
    Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    opa660850mhzin6263agc opa660+7r2m 452n2907opa1013opa660apopa660auref200sbos007 PDF

    Modules A

    Contextual Info: Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 410-112013-5M Printed November 2013 Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial


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    410-112013-5mul5080-960wmodules a PDF

    opa1013 equivalent

    Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
    Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    opa660850mhzopa1013 equivalentagc opa660+72n2907opa1013opa660apopa660auref200ccii application0525p PDF

    IN6263

    Abstract: 1N4007 BL transconductance amplifier spice 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 2N2907 spice
    Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    opa660850mhzin62631n4007 bl+7transconductance amplifier spice2n2907opa1013opa660apopa660auref2002n2907 spice PDF

    2N2907

    Abstract: OPA1013 OPA660 OPA660AP OPA660AU REF200 BUF601
    Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    opa660850mhz2n2907opa1013+4opa660apopa660auref200buf601 PDF

    AGC OPA660

    Abstract: in6263 operational amplifier discrete schematic bridge rectifier 1N4007 bl Common collector configuration basic R2M diode 1N4007 spice DMF3068A R2M 45 spice model 1n4148
    Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    opa660850mhzagc opa660in6263+8operational amplifier discrete schematicbridge rectifier 1n4007 blcommon collector configuration basicr2m diode1n4007 spicedmf3068ar2m 45spice model 1n4148 PDF

    opa660 spice

    Abstract: ACF2101 equivalent SBOA047 BUF601
    Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    opa660850mhz400mhzsboa075+8opa660apopa660auopa660au/2k5sbom113opa660 spiceacf2101 equivalentsboa047buf601 PDF

    Basic principle of AC to DC conversion using SCR

    Abstract: RE78
    Contextual Info: BurrĆBrown Products from Texas Instruments OPA861 SBOS338C – AUGUST 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    opa861sbos338c80mhz95ma/v+2basic principle of ac to dc conversion using scrre78 PDF

    SCR POWER SUPPLY

    Contextual Info: BurrĆBrown Products from Texas Instruments OPA861 SBOS338A – AUGUST 2005 – REVISED FEBRUARY 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    opa861sbos338a80mhz95ma/v+1scr power supply PDF

    ota amplifier

    Abstract: bjt audio amplifier pcb layout REF200
    Contextual Info: BurrĆBrown Products from Texas Instruments OPA861 SBOS338B – AUGUST 2005 – REVISED APRIL 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high


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    opa861sbos338b80mhz95ma/v+3ota amplifierbjt audio amplifier pcb layoutref200 PDF

    in6263

    Abstract: BUF601
    Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION


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    opa660850mhz400mhzin6263+1buf601 PDF