R1LV3216RSD-5SI Search Results
R1LV3216RSD-5SI Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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R1LV3216RSD-5SI |
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Asynchronous SRAM; Organization (word): 4M / 2M; Organization (bit): x 8 / x 16; Memory capacity (bit): 32M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: uTSOP (52); Remarks: x 8 / x 16 switching type | Original | 114.26KB | 18 | ||
R1LV3216RSD-5SI#B0 |
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Memory, Integrated Circuits (ICs), IC SRAM 32MBIT 55NS 52TSOP | Original | 20 | |||
R1LV3216RSD-5SI#S0 |
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Memory, Integrated Circuits (ICs), IC SRAM 32MBIT 55NS 52TSOP | Original | 20 |
R1LV3216RSD-5SI Price and Stock
Renesas Electronics Corporation
Renesas Electronics Corporation R1LV3216RSD-5SI-B0IC SRAM 32MBIT PAR 52TSOP II |
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R1LV3216RSD-5SI-B0 | Tray |
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Renesas Electronics Corporation R1LV3216RSD-5SI-S0IC SRAM 32MBIT PAR 52TSOP II |
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R1LV3216RSD-5SI-S0 | Reel |
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Renesas Electronics Corporation R1LV3216RSD5SI#B0SRAM Chip Async Single 3V 32M-bit 4M/2M x 8/16-bit 55ns 52-Pin TSOP-II Tray |
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R1LV3216RSD5SI#B0 | 1,590 | 25 |
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Renesas Electronics Corporation R1LV3216RSD-5SI#B0Standard SRAM, 2MX16, 55ns, CMOS, PDSO52 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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R1LV3216RSD-5SI#B0 | 1,590 | 1 |
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