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Contextual Info: Preliminary Datasheet RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 Features • Low on-resistance RDS on = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching |
Original |
RJK6024DP3-A0 R07DS1106EJ0100 PRSP0004ZB-A OT-223) |