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Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Datasheet RJL6018DPK R07DS0816EJ0200 Previous: REJ03G1819-0100 Rev.2.00 Jun 21, 2012 600V - 27A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.22 typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25C) |
Original |
RJL6018DPK R07DS0816EJ0200 REJ03G1819-0100) PRSS0004ZE-A | |
Contextual Info: Preliminary Datasheet RJL6018DPK R07DS0816EJ0200 Previous: REJ03G1819-0100 Rev.2.00 Jun 21, 2012 600V - 27A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.22 typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25C) |
Original |
RJL6018DPK R07DS0816EJ0200 REJ03G1819-0100) PRSS0004ZE-A |