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Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Datasheet RJK03N9DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0790EJ0101 Power Switching Rev.1.01 May 30, 2012 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting |
Original |
RJK03N9DNS R07DS0790EJ0101 PWSN0008JB-A | |
Contextual Info: Preliminary Datasheet RJK03N9DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0790EJ0101 Power Switching Rev.1.01 May 30, 2012 Features • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting |
Original |
RJK03N9DNS R07DS0790EJ0101 PWSN0008JB-A |