R07DS0360EJ0200 Search Results
R07DS0360EJ0200 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJK5026DPP R07DS0360EJ0200 Previous: REJ03G1734-0100 Rev.2.00 Apr 15, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current |
Original |
RJK5026DPP R07DS0360EJ0200 REJ03G1734-0100) PRSS0003AB-A O-220FN) | |
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Contextual Info: Preliminary Datasheet RJK5026DPP R07DS0360EJ0200 Previous: REJ03G1734-0100 Rev.2.00 Apr 15, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current |
Original |
RJK5026DPP R07DS0360EJ0200 REJ03G1734-0100) PRSS0003AB-A O-220FN) |