R07DS0310EJ0200 Search Results
R07DS0310EJ0200 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 Previous: REJ03G1497-0100 Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A) • Low drive current • High speed switching |
Original |
RQK0606KGDQA R07DS0310EJ0200 REJ03G1497-0100) PLSP0003ZB-A | |
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Contextual Info: Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 Previous: REJ03G1497-0100 Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A) • Low drive current • High speed switching |
Original |
RQK0606KGDQA R07DS0310EJ0200 REJ03G1497-0100) PLSP0003ZB-A |