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Contextual Info: Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0300 Rev.3.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package MPAK |
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RQJ0304DQDQA R07DS0296EJ0300 PLSP0003ZB-A |