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Contextual Info: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0200 Rev2.00 May 23, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ |
Original |
RJK0631JPD R07DS0252EJ0200 AEC-Q101 PRSS0004ZD-C |