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RJK5013DPP Abstract: RJK5013DPP-00-T2 Contextual Info: Preliminary Datasheet RJK5013DPP R07DS0192EJ0200 Previous: REJ03G1585-0100 Rev.2.00 Nov 02, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.385  typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C)  Low leakage current	Original	RJK5013DPP R07DS0192EJ0200 REJ03G1585-0100) PRSS0003AB-A O-220FN) te9044 RJK5013DPP RJK5013DPP-00-T2	PDF

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RJK5013DPP

Abstract: RJK5013DPP-00-T2
Contextual Info: Preliminary Datasheet RJK5013DPP R07DS0192EJ0200 Previous: REJ03G1585-0100 Rev.2.00 Nov 02, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.385  typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C)  Low leakage current

Original

RJK5013DPP R07DS0192EJ0200 REJ03G1585-0100) PRSS0003AB-A O-220FN) te9044 RJK5013DPP RJK5013DPP-00-T2

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