R07DS0183EJ0200 Search Results
R07DS0183EJ0200 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NP75P04YLGContextual Info: Preliminary Data Sheet NP75P04YLG R07DS0183EJ0200 Rev.2.00 Mar 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) |
Original |
NP75P04YLG R07DS0183EJ0200 NP75P04YLG AEC-Q101 | |
NP75P04YLGContextual Info: Preliminary Data Sheet NP75P04YLG R07DS0183EJ0200 Rev.2.00 Mar 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) |
Original |
NP75P04YLG R07DS0183EJ0200 NP75P04YLG AEC-Q101 |