R 226 35K Search Results

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Abstract: 226 35K capacitor
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to

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Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to

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Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

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Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to

Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

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Abstract: R 226 35k 226 35K capacitor
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

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Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110

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Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

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Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET

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Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

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Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

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Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

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Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

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Contextual Info: Precision, Triple Output Transducer Power Supply ANALOG DEVICES □ FEATURES Resistor Programmable Voltage or Current Output Voltage: +1V dc to +15V dc @ 125mA max Current: 100/liA to 10mA Vc o m p l =+10V Dual Fixed Output: +15V dc @ ±65mA max Excellent Regulation: Line ±0.01% max; Load ±0.02% max

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Contextual Info: Make sure the next Card you purchase has. SB-36110VX VME Compatible Twelve Channel Synchro/Resolver-to-Digital Converter FEATURES • Up to 12 Independent Converter Channels • Accepts Synchro or Resolver Inputs • ±1 min Accuracy • Synthesized Reference

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Abstract: 506k SB-36110VX 296k VME resolver
Contextual Info: Make sure the next Card you purchase has. SB-36110VX VME Compatible Twelve Channel Synchro/Resolver-to-Digital Converter FEATURES • Up to 12 Independent Converter Channels • Accepts Synchro or Resolver Inputs • ±1 min Accuracy • Synthesized Reference

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Abstract: M4450A1009 honeywell ml7420a3006 ML7420A DN100 PN16 honeywell M7420A CE0085AR0013 V5077 VF20T M7420A
Contextual Info: Field Devices Product Catalog 2010 Field Devices Find out more For more information visit our product catalog at http://ecc.emea.honeywell.com A l l Y O U N E E D I N H VA C C O N T R OL Product Catalog 2010 Automation and Control Solutions Honeywell GmbH

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Abstract: Model 2B35K Model 2B35J 115v 400Hz with 5V DC Analog devices 949 205-240V 2B30 2B35J 2B35K EMI filter 115v 400hz
Contextual Info: A N A LO G D E V IC E S □ Precision, Triple Output Transducer Power Supply FEATURES Resistor Programmable Voltage or Current Output Voltage: +1V dc to +15V dc @ 125mA max Current: 100/liA to 10mA Vc o m p l =+10V Dual Fixed Output: +15V dc @ ±65mA max

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Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

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Contextual Info: Low Voltage Equipment Innovative Products for the Electrical Contractor - April 2006 Contractor Products Welcome The 5th Edition 1 Welcome to the fifth edition Epack Catalogue which continues to combine a range of products from ABB specially selected for the electrical contractor.