R 2.8 DIODE Search Results

Contextual Info: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5

028N08N

Abstract: IPP02CN08N IPP028N08N3 JESD22 PG-TO220-3
Contextual Info: IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.8 mΩ ID 100 A • Very low on-resistance R DS(on) previous engineering

Contextual Info: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

2306 mosfet

Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Hitachi DSA002789

Contextual Info: HVC350B Variable Capacitance Diode for VCO ADE-208-414 Z Rev 0 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design.

FS10KM-10

Abstract: 710a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2

Hitachi DSA002788

Contextual Info: HVU350B Variable Capacitance Diode for VCO ADE-208-430A Z Rev 1 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Resin Package (URP) is suitable for surface mount design.

Contextual Info: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V

Outline Dimensions

Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 2 places R 0.5 1.4 1.3 2.85 2.65

Outline Dimensions

Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 2 places R 0.5 4.8 4.6 5° ± 0.5°

2SK3289

Abstract: DSA003643
Contextual Info: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743B Z Target Specification 3rd.Edition. December 1998 Features • Low on-resistance R DS = 1.26Ω typ. (at V GS =10V , ID =150mA) R DS = 2.8Ω typ. (at V GS =4V , ID =50mA) • 4V gate drive device

FS16SM-5

Contextual Info: MITSUBISHI Nch POWER MOSFET FS16SM-5 HIGH-SPEED SWITCHING USE FS16SM-5 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 250V

5d marking

Abstract: MARKING J1A SD914
Contextual Info: SD914 HIGH SPEED SWITCHING DIODE Marking SD914 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0 .14 0.09 0.48 'I 0.38 _L 0.70 0.50 Pin configuration 2.6 1 = ANODE 2 = NC 3 = CATHODE 1.4 1.2 2.4 R0.1 •004 ' /fv R 0 .0 5 _1.02 _ -W 0.12 0.02

1SS221

Abstract: ss221 1SS220 DC-1056A 1SS221A14
Contextual Info: DATA SHEET NEC SILICON SWITCHING DIODES 1SS220.1 SS221 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4.0 pF M A X . in m illim e te r s • High speed switching: t rr = 3.0 ns M A X . 2.8 ± 0.2

2SK3288

Abstract: 2SK3380 DSA003644
Contextual Info: 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK D 12 3

ADE-208-742

Abstract: 2SK3287 DSA003643
Contextual Info: 2SK3287 Silicon N Channel MOS FET High Speed Switching ADE-208-742 C Z 4th.Edition. June 1999 Features • Low on-resistance R DS = 1.26 typ. (VGS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (MPAK)

IS658A

Abstract: IS659B ISTS658A ISTS659B
Contextual Info: IS658A IS659B SIDE LOOK MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 0.8 C 0.5 1.6 2.8 0.75 1.15 1.5 R 0.5 0.3 max 2.15 4.0 R 0.8 3.0 1 2 2 1 1.7 2.54 1 60° 0.15 0.8 1.4 0.5 min 0.45 0.4 0.8 2 ISTS658A ISTS659B DESCRIPTION

IPB03N03LB

Abstract: JESD22 03N03LB
Contextual Info: IPB03N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 2.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

transistor kp 303

Abstract: OPA2111KP
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N 0 Q OPA2111 OPA2111 FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nV/VHz max at 10kHz • • • • • • • • • • LOW BIAS CURRENT: 4pA max LOW OFFSET: 500|iV max LOW DRIFT: 2.8|iV/°C

Contextual Info: SIEMENS SFH 487401 SFH 487406 GaAIAs-Laser Diode 1000 mW with FC-connector 750 mW<2 Package Dimensions in mm SFH 487401 5.2 ±0.3 0.8 ±0.2 00.6 '± 0,1 2.8 1. Laserdiode Cathode 2.NTC 3.NTC case Anode ±0.2 SFH 487406 2.45 -0.3 4.6 ±0.1 M8x0.75 r T 5.5

diode marking e8

Abstract: l21 code BAS31 Diode Marking 016 l21 diode
Contextual Info: BAS31 Dual In-Series General-Purpose Controlled-Avalanche Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) t c u d o r P w e N Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 0.035 (0.9) Dimensions in inches

SOT code ROD

Abstract: GSD2004S
Contextual Info: GSD2004S Dual In-Series Small-Signal Switching Diode TO-236AB SOT-23 t c u d o r P w e N Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 .016 (0.4) Dimensions in inches and (millimeters)