QUMZ2N_NPN MODEL Search Results

QUMZ2N_NPN MODEL Result Highlights (5)

Part	Manufacturer	Description	Download
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet
TTC019	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini	Datasheet

QUMZ2N_NPN MODEL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
QUMZ2N_NPN model Abstract: BJT BF 167 Contextual Info: SPICE PARAMETER UMZ2N * QUMZ2N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ2N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897	Original	000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 QUMZ2N_NPN model BJT BF 167	PDF

Catalog Datasheet

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Document Tags

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QUMZ2N_NPN model

Abstract: BJT BF 167
Contextual Info: SPICE PARAMETER UMZ2N * QUMZ2N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ2N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897

Original

000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 QUMZ2N_NPN model BJT BF 167

PDF