QUANTUM DEVICES Search Results

U/25/20/TN26/15/850/C9920

Contextual Info: Absolute PL Quantum Yield Measurement System C9920-02,-02G,-03,-03G Absolute value of the photoluminescence quantum yield can be instantaneously measured for thin films, solutions, and powders. Absolute photo-luminescence quantum yield values as measured instantaneously for thin films, solutions and powders.

Contextual Info: External Quantum Efficiency Measurement System C9920-12 Luminous efficiency for light emitting devices is measured precisely by utilizing an integrating sphere Light emitting materials are characterized by their fluorescence quantum yield. For light emitting devices like organic and

QL65D5SA

Abstract: 2 Wavelength Laser Diode Photo DIODE (any type) datasheet 650nm "Photo Diode" 650 DIODE 650nm 5mw laser 650NM laser diode 5mw laser diodes for optical source 6 pin laser diode
Contextual Info: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D5SA L Signature of Approval Approved by Checked by Issued by Approval by Customer QL65D5SA InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650nm band InGaAlP laser diode with multi-quantum well structure.

quantum dot

Abstract: Mechatronics "quantum dots" Hydrogen Peroxide Quantum Effect
Contextual Info: EYE 3 March 2007 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 175 CONTENTS INFORMATION Plugging a Loophole in Security of Quantum Cryptography .2 Development of New Chemical-reuse Environment-conscious

Germanium Power Diodes

Abstract: BD3 tunnel diode Germanium Power Devices
Contextual Info: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage

ot 112

Abstract: 2013A015 photodiode amplifier Photodiode a Silicon Photodiode Solderable Chip
Contextual Info: “Improving the Quality of Life through the Power in Light” Planar Silicon Photodiodes …photovoltaic & photoconductive… QUANTUM DEVICES, INC. offers two high quality, state of the art, photodiode constructions: Photovoltaic for PV application and Photoconductive for (PC) applications. Due

PGAS1S09

Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
Contextual Info: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength

Photodiode 2045a001

Abstract: 2045A001 2045A003 2045A002 2045A004 2045A008 2045A009 2045A010 2045A011
Contextual Info: “Improving the Quality of Life through the Power in Light” Planar Silicon Photodiodes with Leads …photovoltaic & photoconductive… QUANTUM DEVICES, INC. offers two high quality, state of the art, photodiode constructions: Photovoltaic for PV application and Photoconductive for (PC) applications. Due

3M-468MP

Abstract: 3M-467MP 3M468 3M-467 3M467 3m467mp 467MP membrane key QPROX QT110
Contextual Info: The Q-Files QT60320 Series Panel Design Guidelines Design Guidelines for an Interdigitated Touch Sensor Electrode Panel Quantum Research Group’s QT60320 32 key matrix controller is a departure from our QT110 style devices in that the QT60320 uses a scanned transverse electrode design as

2 Wavelength Laser Diode

Abstract: QL65D5SA 650 DIODE 650-nm Laser Diode 10 pin Roithner-Laser QL65D5S
Contextual Info: QL65D5SA InGaAlP Laser Diode 2002 ♦ OVERVIEW QL65D5SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Pointer and Bar Code Reader.

Contextual Info: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the

RLD65MZT2

Contextual Info: RLD65MZT2 Laser Diodes DVD-ROM, Combination red laser diode RLD65MZT2 For DVD-ROM, COMBINATION. The strained multi quantum well of active layer is optimized that realized low threshold current and the good temperature characteristic. !Applications DVD-ROM

PX10160E

Contextual Info: LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.

Contextual Info: ADVANCE MT28F800S2/MT28F008S2 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 8 MEG SmartVoltage SVT-II , SECTORED ERASE FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX

Contextual Info: PRELIMINARY 2 MEG, BIOS-OPTIMIZED, BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F200C1 MT28F002C1 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB)

RLD65MPT7

Contextual Info: RLD65MPT7 Laser Diodes Low power red laser diode RLD65MPT7 Glass-less structure Red Laser. Low Ith & good temperature characteristics made by suitability of Multi Quantum Well. zDimensions Unit : mm zApplications DVD-player COMBO drive Bar cord scanner Sensor

Contextual Info: PRELIMINARY MT28F400B1 256K x 16, 512K x 8 FLASH MEMORY MICRON M QUANTUM DEVICES, INC. FLASH MEMORY 256K x 16, 512K x 8 S martV oltage , BOOT BLOCK FEATURES • Seven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks

QL67D6SA

Contextual Info: QL67D6SA InGaAlP Laser Diode 2003. Rev 1. ♦ OVERVIEW QL67D6SA is a MOCVD grown 670 nm band gain-guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5 mW for optoelectronic devices such as Bar Code Reader.

Contextual Info: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY MICRON U QUANTUM DEVICES, INC. FLASH MEMORY 512K x 8 S m a r tV o lta g e , BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks

CCD30-11

Abstract: 7133A S11071 CCD30 M-2011 tdi ccd E2V transistor 7133A
Contextual Info: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency

ortec 142 preamplifier

Abstract: ortec 142 ortec preamplifier ortec 142 A TP136
Contextual Info: Return To Product Page S83056F Photomultiplier 76 mm 3 inch -Hexagonal, 8-Stage, End-Window PMT ! High Quantum Efficiency: Typically 32.6% at 370 nm ! Excellent Collection of Photoelectrons from all Areas of the Useful Photocathode ! Typical Pulse Height Resolution:

ortec 142

Abstract: ortec 142 preamplifier ortec 142 A ortec preamplifier TP136 temperatureof22 filament bulb
Contextual Info: Return To Product Page S83056F Photomultiplier 76 mm 3 inch -Hexagonal, 8-Stage, End-Window PMT ! High Quantum Efficiency: Typically 32.6% at 370 nm ! Excellent Collection of Photoelectrons from all Areas of the Useful Photocathode ! Typical Pulse Height Resolution:

e2v ccd

Abstract: tdi ccd E2V 7407a NOT GATE 7406 IC
Contextual Info: CCD30–11 Back Illuminated High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Back Illuminated Format for Enhanced Quantum Efficiency

670 nm

Abstract: 650NM laser diode 5mw SONY TC C6802 IEC60825-1 SLD1134VL
Contextual Info: SLD1134VL 650nm Pulsation Red Laser Diode Description The SLD1134VL is a pulsation red laser diode designed for DVD systems. M-274 Features • Low noise • Standard package φ5.6mm Application DVD Structure • AlGaInP quantum well-structure laser diode