QSO 28 PACKAGE Search Results

N1LG

Contextual Info: 80C186EA/80C188EA, 80L186EA/80L188EA PACKAGE INFORMATION This section describes the pins, pinouts, and thermal characteristics for the 80C186EA in the Plastic Leaded Chip Carrier PLCC package, Shrink Quad Rat Pack (SQFP), and Quad Flat Pack (QFP) pack­

ad664

Contextual Info: Monolithic 12-Bit Quad DAC AD664 ANALOG DEVICES □ FEATURES Four Complete Voltage Output DACs Data Register Readback Feature "Reset to Zero" Override Multiplying Operation Double-Buffered Latches Surface Mount and DIP Packages MIL-STD-883 Compliant Versions Available

Contextual Info: PI6C3Q991, PI6C3Q993

Contextual Info: PI6C3Q991, PI6C3Q993

INTEL 1980

Abstract: intel iapx 88 architecture and instructions 8284A clock generator i8088 intel 8087 instruction set AFN-01820B 1QS01 iAPX 88 all register 8x80-Bit 8087
Contextual Info: ¡nur iAPX 86/20 iAPX 88/20 NUMERIC DATA PROCESSOR Support 8 Data Types: 8-, 16-, 32-, 64Bit Integers, 32-, 64-, 80-Bit Floating Point, and 18-Digit BCD Operands High Performance 2 Chip Numeric Data Processor Standard iAPX 86/10, 88/10 Instruction Set Pius Arithmetic, Trigonometrie

tic 41c

Contextual Info: jjjm iM W ÆmSmmkjjjjjj jmSSm «HHH •!—mmmm DEVICES INCORPORATED FEATURES □ First-In/First-Out FIFO using Dual-Port Memory □ Write and Read Clocks can be synchronous or asynchronous □ □ □ □ Advanced CMOS Technology High Speed — to 15 ns Cycle Time

Contextual Info: Monolithic ANALOG DEVICES □ 12-Bit Quad DAC AD664 PIN CONFIGURATIONS FEATURES Four Complete Voltage Output DACs Data Register Readback Feature "Reset to Zero" Override Multiplying Operation Double-Buffered Latches Surface Mount and DIP Packages MIL-STD-883 Compliant Versions Available

IC-8221

Abstract: UPD70208H IC-3659 NEC V50 hardware 209E IEU-770 70216H V40HLTM PD70208H pD70216HLP-16
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M P D 7 0 2 0 8 H , 7 0 2 1 6 H V40HL , V50HL™ 16/8, 16-BIT MICROPROCESSOR DESCRIPTION The iiPD70208H V40HL is a high-speed, low -pow er 16-/8-bit m icroprocessor based on the jiPD70208 (V40™) w ith 16-bit architecture, 8-bit data bus, and general-purpose peripheral functions.

d70208l

Abstract: D70208GF-8-3B9 D70208GF-10-3B9 uPD70216 "pin compatible" d70208gf MPD70216 PD70208L nec V20 microcontroller PD70216GF PD70208
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿PD70208,70208 A , 70216.70216(A) V40 , V50™ 16/8, 16-BIT MICROPROCESSOR DESCRIPTION The ¿¡PD70208 (V40) is a 16/8-bit microprocessor of 16-bit architecture provided with an 8-bit data bus. The /¿PD70216 (V50) is a 16-bit microprocessor of 16-bit architecture provided with a 16-bit data bus.

Contextual Info: l p 13« PIMMMGT [PIF3EWEW in te l. 80L188EA8 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR • 3V Operation, Vcc = 2.7V-5.5V ■ Full Static Operation ■ True CMOS Inputs and Outputs Integrated Feature Set — Static 186 CPU Core — Power Save, Idle and Powerdown

Contextual Info: Ä P M K K g i 0 ìì0(F 1^( ì ì !A T D M in te i 80L186EA-13, -8 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR • 3V Operation, Vcc = 2.7V-5.5V ■ Full Static Operation ■ True CMOS Inputs and Outputs ■ Integrated Feature Set — Static 186 CPU Core

Contextual Info: NCV53480 Low-Power OOK/FSK/ASK ISM Band Transceiver General Description The NCV53480 ASSP is a low power OOK/FSK/ASK transceiver designed for operation in the ISM band from 260 MHz to 470 MHz. It is intended for use in narrowband, low data rate applications in the

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> baMTÔ2T 001002b TD7 M GFX38V9095 9 .0 —9.5G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX 38V 9095 is an internally impedance matched GaAs power FET especially designed for use in 9.0 ~ 9.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M GFX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> QQ1ÖQEM 034 “ 1 1 . 7 - 12.2G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 1 7 2 2 is an internally impedance matched GaAs power F E T especially designed fo r use in 11.7 — 12.2 G H z band amplifiers. The herm etically sealed metal-ceramic

qSO 28 package

Abstract: pulse generator impedance "50 ohm" ansi s3.25 LVB044 baseband router block diagram
Contextual Info: PI90LV044, PI90LVB044

28-pin

Contextual Info: PENDING APPROVAL PI90LV044, PI90LVB044

SNW-EQ-608

Abstract: transistor d 1862
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES _ PMBF107 PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 • No secondary breakdown. 2 g

Contextual Info: in te i 80L188EA-13, -8 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR • 3V O p e ra tio n , V c c = 2 .7 V -5 .5 V ■ F u ll S ta tic O p e ra tio n ■ T ru e C M O S In p u ts a n d O u tp u ts ■ Integrated Feature Set — Static 186 CPU Core — Power Save, Idle and Powerdown

Contextual Info: TOSHIBA MICROWAVE POWER QaAs FET MICROWAVE SEMICONDUCTOR TIM7I 79-8SL TECHNICAL DATA FEATURES : • LOW IN T E P M O D U L A T IO N D IS T O R T IO N ■ HIGH EFFIC IENC Y qadd * 32 % at 7.1 8H2 to 7 . 1 GHz |M3 a - 4 5 dBc at Po * 28.5 dBm, S ingle C arrier Level

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX38V9500 9 .5 ~ 1 0 .Q G H z BAWD 6 W INTERN ALLY MATCHED GaAs FET DESCRIPTION The MGFX38V9500 is an internally impedance matched GaAs power FET especially designed for use in 9.5 — 10.0 GHz band amplifiers. The hermetically sealed metal-ceramic

KD 2107

Abstract: driver circuit for irs 2110 C7172 PCS-60 STC transistors g135 arm 272432 1HT1 N80c186
Contextual Info: INTEL CORP UP/PRPHLS bflE ]> • HÖ2bl7S G13SÖ37 176 M I T L l in te l 80C186EA/80C188EA AND 80L186EA/80L188EA 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS ■ 80C186 Upgrade for Power Critical Applications ■ Fully Static Operation ■ True CMOS Inputs and Outputs

Contextual Info: bEHTBST □Dl601fi fi3D • MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 38V 6472 6 . 4 ~ 7.2GHz BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an internally im pedan ce-m atched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2 G H z band amplifiers. The herm etically sealed metal-ceramic