Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b*fE D bb53R31 QQ27QQ7 bQ7 «APX Philips Semiconductors Product specification Very fast soft-recovery avalanche BYD57 series rectifier diodes QUICK REFERENCE DATA DESCRIPTION Glass passivated epitaxial rectifier diodes in hermetically sealed
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bb53R31
QQ27QQ7
BYD57
BYD57D
BYD57G
BYD57J
BYD57K
BYD57M
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Untitled
Abstract: No abstract text available
Text: bbS3T 31 QQ27t17a OTS W A P X N AUER PHILIPS/DISCRETE b^E D 7 JC549 JC550 v SILICON PLANAR EPITAXIALl TRANSISTORS NPN transistors in plastic TO-92 variants, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
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QQ27t17a
JC549
JC550
JC549B
JC550B
JC549C
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE bRE D • bb53R31 QQ272RQ 22b « A P X BT149 SERIES THYRISTORS Fully-diffused thyristors in TO—92 package, with low gate current requirement suitable fo r driving from IC outputs. Applications include relay and coil pulsing, control of small DC motors, small lamps,
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bb53R31
QQ272RQ
BT149
BT149-B
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BFX34
Abstract: Silicon Epitaxial Planar Transistor philips
Text: N AMER PHI LIP S/DISCRETE bTE D • bbSa'm I QQ277SS T27 BFX34 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as high-current switching device, e.g. inverters and switching regulators. QUICK REFERENCE DATA
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BFX34
BFX34
Silicon Epitaxial Planar Transistor philips
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TC528257
Abstract: n724
Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The
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TC528257
144WORDS
TC528257
144-w
512-words
TC528257J/SZ/nVTR1017240
TC528257J/SZ/FT/TR-70
TC528257J/SZ/FT/TR-80
n724
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Untitled
Abstract: No abstract text available
Text: CMOS Clocked FIFO With Bus Matching and Byte Swapping IDT723613 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity FIFO buffering data from Port A
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IDT723613
64x36
36-bits
18-bits
00S742b
IDT723613
PN120-1)
PQ132-1)
3145drw21
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Untitled
Abstract: No abstract text available
Text: 3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO IDT72V81 DUAL 512 X 9, DUAL 1024 x 9 IDT72V82 PRELIMINARY INFORMATION Integrated Device Technology, Inc. FEATURES: single package with all associated control, data, and flag lines assigned to separate pins. The devices use Full and Empty
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IDT72V81
IDT72V82
2S771
D027n3
IDT72V81/72V82
S056-2)
72V81
72V82
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. CMOS Sync BiFlFO With Bus-Matching 256x36x2, 512x36x2, 1,024x36x2 PRELIMINARY IDT723624 IDT723634 IDT723644 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.
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256x36x2,
512x36x2,
024x36x2
IDT723624
IDT723634
IDT723644
2S771
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TS93C46
Abstract: TS93C46CP 9346 EEPROM TS93C46C S1063 NMC9346 11XXXXX
Text: 7 C 5C)537 DQ5753M 3 • S C S -T H O M S O N S G S-THOMSON _ TS93C46 3QE 5 1K BIT SERIAL CMOS EEPROM ■ H IG H L Y R E L IA B L E C M O S F L O A T IN G G A T E TEC H N O LO G Y. ■ S IN G L E 5 -V O L T S U P P L Y ■ E IG H T P IN P A C K A G E .
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TS93C46
64x16
128x8
7CJ2C1237J3027S4P
T-46-35
TS93C46CP
TS93C46VP
p001-f/6
TS93C46
9346 EEPROM
TS93C46C
S1063
NMC9346
11XXXXX
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Untitled
Abstract: No abstract text available
Text: BU RR - BROW N « E SHC615 1 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS • PROPAGATION DELAY: 2.2ns • BROADCAST/HDTV EQUIPMENT • BANDWIDTH: OTA: 750MHz Comparator: 280MHz • TELECOMMUNICATIONS EQUIPMENT • LOW INPUT BIAS CURRENT: -0.3*iA
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SHC615
750MHz
280MHz
100dB
ZZ235
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7S00F/FU 2-Input NAND Gate The TC7S00 is a high speed C2MOS 2-input NAND Gate fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation.
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TC7S00F/FU
TC7S00
TC74HC
T0T724Ã
GG274b5
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Untitled
Abstract: No abstract text available
Text: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers
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HM51W17805B
152-word
ADE-203-462B
28-pin
ns/70
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Untitled
Abstract: No abstract text available
Text: sì GEC PLESSEY OCTOBER 1996 S E M I C O N D U C T O R S D S 4287 - 2.3 ACE9020 RECEIVER AND TRANSMITTER INTERFACE Supersedes DS4287 - 1.0 in Communications 1C Handbook. HB4235 - 1.0, February 1996 ACE9020 is a VHFoscillator, up-converter and prescaler.
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ACE9020
DS4287
HB4235
ACE9020
ACE9010
ACE9030.
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N E OPA628 1 Low Distortion Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • EXCELLENT DIFFERENTIAL GAIN: 0.015% • BROADCAST QUALITY VIDEO • EXCELLENT DIFFERENTIAL PHASE: 0.015° • LOW DISTORTION: 90dB SFDR • MEDICAL IMAGING
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OPA628
60dBm
160MHz
30MHz
OPA628
ZZ182
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Untitled
Abstract: No abstract text available
Text: 0PA111 B U R R -B R O W N [ ] Low Noise Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nvVfiz max 10kHz • LOW BIAS CURRENT: 1pA max • PRECISION INSTRUMENTATION • DATA ACQUISITION • LOW OFFSET: 250[iV max
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0PA111
10kHz)
120dB
100dB
OPA111
ZZ001
17313bS
D027370
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Untitled
Abstract: No abstract text available
Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers
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HM5118160BI
1048576-word
16-bit
ADE-203-580A
5118160B
576-w
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y October iws S E M I C O N D U C T O R S DS3532-1.4 DW9241 78.8125MHZ LOW LOSS SAW I.F. FILTER FOR GSM PERSONAL COMMUNICATIONS Supersedes version in February 1994 Microwave Products Handbook, HB3198-2 5= &lij Soc 2 12 GND 11 GND GND 1 5
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DS3532-1
DW9241
8125MHZ
HB3198-2)
DW9241
80MHz
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Untitled
Abstract: No abstract text available
Text: ICS9147-10 Integrated •i Circuit Systems, Inc. Advanced Information Frequency Generator & Integrated Buffers for PENTIUM General Description Features Three copies of CPU clock One copy of ECPU clock ECPU is early 1.5 to 3.5ns. Six SDRAM (3.3VTTL), usable asAGP clocks
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ICS9147-10
ICS9147-10
ICS9147F-10
4fl2575û
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transistor s0014
Abstract: S0014
Text: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong
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fl23SbOS
00272flb
CATH00E
transistor s0014
S0014
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LF 3.3vOLT
Abstract: No abstract text available
Text: PRELIMINARY IDT72V255 IDT72V265 3.3 VOLT CMOS SUPERSYN C FIFO 8,192x18,16,384x18 Integrated Device Technology, Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology • Industrial temperature range -40°C to +85°C is avail
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192x18
384x18
IDT72V255
IDT72V265
18-bit
IDT72V255)
IDT72V265)
492-M
PSC-4036
LF 3.3vOLT
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0.0.026.01 capacitor
Abstract: viterbi algorithm IESS-308 sCRAMBLER STEL2176
Text: Introduction KEY FEATURES RECEIVER • ■ ■ 10-b it A/D on chip 1 6 /6 4 /2 5 6 QAM demodulation Selectable ITU-T J.83 , Annex A/Annex B forward error correction (FEC) ■ MCNS, IEEE 8 0 2 .1 4 (preliminary), DAVIC/DVB compliant ■ Parallel or serial output data with or
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STEL-2176
C-5/2/97
2115A
0.0.026.01 capacitor
viterbi algorithm
IESS-308 sCRAMBLER
STEL2176
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V
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IR2113
IR2113S
IRFBC30)
IR2113STj
IRFBC20)
IRFPE50)
IRFBC40)
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Untitled
Abstract: No abstract text available
Text: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,
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HM5216808C
HM5216408C
576-word
152-word
ADE-203-617
Hz/100
Hz/83
7777K\
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Untitled
Abstract: No abstract text available
Text: NEC N E C ELECTRONICS INC 30E D • ¡1PD70335 V35 Plus 16-Bit Microcomputer: Advanced, High-Speed DMA, Single-Chip, CMOS NEC E lectro n ics Inc. Description The jtPD70335 (V35 Plus) is a high-performance, 16-bit slngle-chip microcomputer with a 16-bit external data
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1PD70335
16-Bit
jtPD70335
16-bit
PD70335
tPD70108/116
/tPD70320/330
reg16
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