QLT POWER Search Results

JESD22-A104

Abstract: JESD22-A113 transistor A114 JESD22 JESD22A104 rf6285 JESD22-A114 A114 transistor NK80530VY400256 a118
Contextual Info: RF6285 Qualification Report Page 1 of 1 QLT-01093, Revision C Product Description A high-power, high‐efficiency multi‐band linear power amplifier module Package Type Laminate Module 5.5 x 6 x 1 mm Process Technology GaAs Qualification #

JESD22-B117

Abstract: Latch up test JESD78 JESD22-B111 DTS04169EN DTS04193EN JEDEC JESD22-B117 dts04193 QLT POWER IEC-68-2-21 JESD78
Contextual Info: RF6280 Qualification Report Page 1 of 2 QLT-01087, Revision B Product Description A multi-functional power management unit DC‐DC converter Package Type WLCSP, 2 x 2 x 0.65 mm Process Technology Si Qualification # 06‐QUAL‐752 Date Issued

transistor A114

Abstract: JESD22-A114 A114 transistor A114 JESD22-A103 a103 transistor JESD22-A108 ESD process A103 A101
Contextual Info: RF1126 Qualification Report Page 1 of 1 QLT-02971, Revision B Product Description Low power WCDMA SP2T switch Package Type 2 x 1.3 x 0.4 mm 6-pin QFN Process Technology GaAs Qualification # 08‐QUAL‐1061 08‐QUAL‐951 Date Issued 1/19/2009

JESD22-A104

Abstract: JESD22-A113 transistor A114 A114 transistor JESD22-B102 JESD22-C101 JESD22 JESD22-A114 transistor C101 A101
Contextual Info: RF1132 Qualification Report Page 1 of 1 QLT-03370, Revision B Product Description Broadband High Power SP3T Switch Package Type 2 x 2 x 0.55 mm 12-pin QFN Process Technology GaAs Qualification # 08‐QUAL‐1082 08‐QUAL‐1062 Date Issued

JESD22-A110

Abstract: JESD22-A104 JESD22A110 Latch up test JESD78 A104 diode JESD22-A115 transistor C101 JESD22-A108 IEC 68-2-21 JESD22-A114
Contextual Info: RF1450 Qualification Report Page 1 of 2 QLT-02952, Revision A Product Description Package Type Broadband High Power SP4T Switch QFN Process Technology GaAs, Si Date Issued 4/23/08 3mm x 3mm x 0.85mm Qualification # 07-Qual-922 FOR IMPORTANT INFORMATION REGARDING THESE MATERIALS INCLUDING DISCLAIMERS REGARDING USE IN CERTAIN

JESD22-A110

Abstract: JESD22-A104 JESD22A110 JESD22-A113 b102 JESD22-A115 transistor C101 JESD22-A108 JESD22-A114 RF1200
Contextual Info: RF1200 Qualification Report Page 1 of 2 QLT-02953, Revision A Product Description Package Type Broadband High Power SPDT Switch QFN Process Technology GaAs Date Issued 4/23/08 2mm x 2mm x 0.85mm Qualification # 08-QUAL-932 FOR IMPORTANT INFORMATION REGARDING THESE MATERIALS INCLUDING DISCLAIMERS REGARDING USE IN CERTAIN

74HC7266A

Contextual Info: TC74HC266AP/AF VTC74HC7266AP/AF T C 7 4 HC 2 66 AP/ AF T C74HC7266AP/ AF Q U A D E X C L U S I V E NOR G A T E Q U A D E X C L U S I V E NOR G A T E OP E N D R A I N T h e T C 7 4 H C 266A /7266A a r e h ig h sp e e d C M O S Q U A D E X C L U S I V E N O R G A T E f a b r ic a te d w ith silic o n g a te

HC541A

Contextual Info: TC74HC540AP/AF TC74HC541AP/AF O C T A L BUS B U F F E R TC74HC540AP/AF IN V E R T IN G , 3 - S T A T E O UTPUTS TC74HC541AP/AF N O N - I N V E R T I N G . 3 - S T A T E O UTPU TS The TC74HC540A/TC74HC541A are high speed CMOS OC TR A L BUS BTJFFERs fab ricated w ith silicon gate

Contextual Info: 'ZTC74HC175AP/AF/AFN QUAD D-TYPE FLI P FLOP WITH CLEAR The TC74HC175A is a high speed CM OS D - T Y P E F L I P F L O P fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent L S T T L while m aintaining the CM O S low power

ior e78996

Abstract: IR E78996
Contextual Info: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

mp212a

Abstract: MP7247 mp7246 P212A k22s 5MICROP
Contextual Info: 50E T> • L.m?444 0003413 2 ■ _ MICRO POWER SYSTEMS INC Section 9 Modem Chip Set T~1S-33-05 General Description The MP212A Is a highly versatile full duplex modem composed of two CM O S LSI circuits: the MP7246/76 and MP7247/77. With the MP212A. 300 and 1200 bit per second data communications can be easily designed Into a variety of systems using minimal

2N3904

Abstract: 2N3906 2N3906 JEDEC
Contextual Info: 4SE D • =10=17250 0017746 IT O S H b TOSHIBA TRANSISTOR 2N3906 SILICON PNP EPITAXIAL T Y P E PCT PROCESS ~> TOSHIBA ' T ■i (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV~“50nA(Max.)» lBEV=50nA(Max.)

Contextual Info: II TC74HC113AP/AF DUAL J -K FLIP FLOP WITH PRESET The TC74HC113A is a high speed CMOS D U A L J - K F L IP F L O P fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation sim ila r to equivalent L S T T L while m ain tain in g the CMOS low power

Ericsson antennas

Contextual Info: Ericsson WLAN Bridge B3 Quick Installation Guide This Quick Installation Guide is intended for experienced installers and network administrators. All others should refer to the relevant sections in the Ericsson Wireless LAN User’s Guide. Package Contents

BUT28

Abstract: VN540 VN540-011Y VN540-012Y VN540SP
Contextual Info: VN540 / VN540SP / VN540 011 Y / VN540(012Y) HIGH SIDE SMART POWER SOLID STATE RELAY TYPE ^dem ag R DS(on) •o u t V cc -55V 50m ü 2.8A 36 V VN540 VN540SP VN540(011Y) VN540(012Y) ■ OUTPUT CURRENT (CONTINUOUS) : 2.8A ■ DIGITAL INPUT CLAMPED AT 32V ■ PROTECTION AGAINST: LOSS OF GROUND,

Ericsson antennas

Abstract: Ericsson s3
Contextual Info: Ericsson Wireless LAN Station S3 Quick Installation Guide This Quick Installation Guide is intended for experienced installers and network administrators. All others should refer to the relevant sections in the Ericsson Wireless LAN User’s Guide. Package Contents

74LS00 truth table

Abstract: 74LS00J
Contextual Info: '/T QUAD 2-INPUT C 7 4 H NAND C 0 0 A P / A F / A F N -j GATE i T he TC74HC00A is a high speed CMOS 2 -IN P U T j N A N D G A T E fa b ricated w ith silicon g ate C 2 MOS technology. It achieves the high speed o p eratio n s im ila r to eq u iv alen t L STT L w hile m a in ta in in g the CMOS low pow er

Contextual Info: CY7C191 CY7C192 f ' 1Y P P T 7 C C SEMICONDUCTOR F eatures • Automatic power-down when deselected • Transparent write 7C19I • CMOS for optimum speed/power • High speed — U a = 2 s ns • Low active power — 660 mW • Low standby power — 193 mW

Contextual Info: TC74HCT157AP/AF TC74HCT158AP/AF TC74HCT157AP/AF TC74HCT158AP/AF QUAD 2 -C H A N N E L QUAD 2-C H A N N E L M ULTIPLEXER M ULTIP LEXE R IN VE R TING The TC74HCT157A and TC74HCT158A are high speed CMOS 2-C H A N N E L M ULTIPLEXERS fabricated with silicon gate C'M OS technology.

74HC00AP

Abstract: 74HC00A
Contextual Info: TC74HC00AP/AF/AFN QUAD 2-INPUT NAND GATE T h e TC 74H C 00A is a h ig h spe ed C M O S 2 - I N P U T N A N D G A T E f a b ric a te d w ith silicon g a te C ‘ MOS techn o lo g y . It a c h i e v e s t h e h i g h s p e e d o p e r a t i o n s i m i l a r to

Contextual Info: TC74HCT04AP/AF/AFN HEX I NV ER TE R T h e T C 7 4 H C T 04A is a h ig h speed C M O S IN V E R T E R f a b ric a te d w ith silic o n g a te C 2M O S tech n o lo g y . It a ch iev es the h ig h speed o p eratio n s im ila r to e q u iv a le n t L S T T L w hile m a in ta in in g the C M O S low pow er

Contextual Info: TC74HCT563AP/AF TC74HCT573AP/AF/AFW O CTAL D -T Y P E LA TC H W ITH 3 -S T A T E O UTPUT TC74HCT563A P/A F IN VER TIN G TC 74H C T573A P /A F/A FW N O N -IN V E R T IN G The TC74HCT563A and TC74HCT573A are high speed CMOS OCTAL LA TCH with 3 -S T A T E OUTPUT

HC-425

Contextual Info: O C TA L BU S B U F F E R W IT H TC74HCT240AP/AF/AFW TC74HCT241 A P / A F TC74HCT244AP/AF/AFW TC74HCT240AP/AF/AFW TC74HCT241AP/AF TC74HCT244AP/AF/AFW T T L IN P U T L E V E L IN V E R T E D .3 - S T A T E O U T PU T S N O N - IN V E R T E D ,3 - S T A T E O U TPU TS

Contextual Info: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications: