QG SMD TRANS Search Results

Contextual Info: Transistors IC SMD Type Product specification 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max

smd transistor QG

Abstract: smd transistor 26 2SK3713
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max

IRHSLNA57064

Abstract: IRHSNA57064
Contextual Info: PD-94401 RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSLNA57064 60V, N-CHANNEL Product Summary Part Number IRHSLNA57064 RDS(on) 6.1mΩ QG 180nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,

IRHSLNA57Z60

Abstract: IRHSNA57Z60
Contextual Info: PD-94400 RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSLNA57Z60 30V, N-CHANNEL Product Summary Part Number RDS(on) IRHSLNA57Z60 4.0mΩ QG 200nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,

Controlled avalanche Schottky

Abstract: IRHSLNA57Z60 IRHSNA57Z60
Contextual Info: PD-94237E RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSNA57Z60 30V, N-CHANNEL Product Summary Part Number IRHSNA57Z60 RDS(on) 3.5mΩ QG 200nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,

12v DIODE schottky

Abstract: IRHSLNA57064 IRHSNA57064 MOSFET SMD-2 smd diode 15 diode schottky 809 PD-94323B
Contextual Info: PD-94323B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSNA57064 60V, N-CHANNEL Product Summary Part Number IRHSNA57064 RDS(on) 5.6mΩ QG 180nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative,

Contextual Info: Transistors IC SMD Type Product specification KDB15N50 FDB15N50 Features TO-263 Unit: mm +0.1 1.27-0.1 Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt +0.1 1.27-0.1 +0.2 4.57-0.2 Ruggedness Reduced Miller Capacitance and Low Input Capacitance

Contextual Info: IC IC MOSFET SMD Type Product specification KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

68NC

Abstract: 2SK3573 transistor 42A
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3573 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 68nC TYP. VDD = 16 V, VGS = 10 V, ID = 83 A Built-in gate protection diode

IRHSLNA53064

Abstract: IRHSLNA54064 IRHSLNA57064 IRHSLNA58064 IRHSNA57064 Controlled avalanche Schottky
Contextual Info: PD-94401A RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSLNA57064 60V, N-CHANNEL Product Summary Part Number Radiation Level IRHSLNA57064 100K Rads (Si) IRHSLNA53064 300K Rads (Si) RDS(on) QG 6.1mΩ 160nC 6.1mΩ 160nC IRHSLNA54064 600K Rads (Si)

2 input and gate 24v

Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. ID = 48 A, VDD = 16V, VGS = 10 V

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode

2SK3570

Abstract: 930 diode smd
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode

ja smd

Abstract: IC MOSFET QG smd diode fr
Contextual Info: IC IC SMD Type N-Channel UltraFET Trench MOSFET KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

Contextual Info: IC IC SMD Type N-Channel Qg, Fast Switching WFETTM KI4390DY Features Extremely Low Qgd WFET Technology for Switching Losses TrenchFETTM Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TJ = 150

2SK3467

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode

SMD 20A

Abstract: 2SK3404
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode

2SK3572

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3572 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 32 nC TYP. VDD = 16 V, VGS = 10 V, ID = 80 A Built-in gate protection diode +0.2

Contextual Info: Transistors IC SMD Type Product specification 2SK3295 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 QG = 16 nC TYP. ID = 35 A, VDD = 16 V, VGS = 10 V 0.1max +0.1 1.27-0.1 Surface mount device available

2SK3405

Abstract: smd transistor nc 64
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. ID = 48 A, VDD = 16V, VGS = 10 V +0.1 0.81-0.1

IRHSLNA57064

Abstract: IRHSNA53064 IRHSNA54064 IRHSNA57064 IRHSNA58064 RAD-HARD
Contextual Info: PD-94323C RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSNA57064 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG IRHSNA57064 100K Rads (Si) 5.6mΩ 160nC IRHSNA53064 300K Rads (Si) 5.6mΩ 160nC IRHSNA54064 600K Rads (Si) 5.6mΩ 160nC

2SK3574

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. VDD = 24 V, VGS = 10 V, ID = 48 A Built-in gate protection diode

IC MOSFET QG

Abstract: mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG
Contextual Info: IC IC SMD Type N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET)