QFN3333 Search Results

PSMN013-30LL

Contextual Info: PSMN013-30LL N-channel QFN3333 30 V 13 mΩ logic level MOSFET Rev. 04 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: PSMN7R0-40LS N-channel QFN3333 40 V 7.0 mΩ standard level MOSFET Rev. 01 — 24 June 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: PSMN014-60LS N-channel QFN3333 60 V 14 mΩ standard level MOSFET Rev. 01 — 25 June 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

PHL3530AL

Contextual Info: PHL3530AL N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET Rev. 1 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications

Contextual Info: PSMN017-30LL N-channel QFN3333 30 V 17 mΩ logic level MOSFET Rev. 01 — 26 May 2010 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

20100622

Abstract: PSMN3R8-30LL
Contextual Info: PSMN3R8-30LL N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Rev. 3 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

PSMN014-60LS

Contextual Info: PSMN014-60LS N-channel QFN3333 60 V 14 mΩ standard level MOSFET Rev. 2 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

PSMN017-30LL

Contextual Info: PSMN017-30LL N-channel QFN3333 30 V 17 mΩ logic level MOSFET Rev. 03 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

PSMN3R5-30LL

Abstract: diode L2.8
Contextual Info: PSMN3R5-30LL N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET Rev. 3 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

PSMN5R8-30LL

Contextual Info: PSMN5R8-30LL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Rev. 2 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: UM10456 QFN3333 demonstration board Rev. 1 — 6 June 2011 User manual Document information Info Content Keywords QFN3333, Point-Of-Load, demonstration board Abstract The QFN3333 demonstration board is a single-phase buck converter design for demonstrating the performance of NXP Semiconductors’

Contextual Info: PSMN9R0-30LL N-channel QFN3333 30 V 9 mΩ logic level MOSFET Rev. 03 — 23 June 2010 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: PSMN013-30LL N-channel QFN3333 30 V 13 mΩ logic level MOSFET Rev. 03 — 25 June 2010 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

PHL5830AL

Contextual Info: PHL5830AL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Rev. 2 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications

PSMN9R0-30LL

Abstract: SOT873
Contextual Info: R R R R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D D R R A A A R R D D N-channel QFN3333 30 V 9 mΩ logic level MOSFET FT FT Objective data sheet FT Rev. 01 — 12 February 2010 D D D D D PSMN9R0-30LL R A F FT FT A A R R D D D D FT FT

Contextual Info: PSMN3R8-30LL N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: PSMN3R5-30LL N-channel QFN3333 30 V 3.55 mΩ logic level MOSFET Rev. 2 — 15 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

PHL17030AL

Contextual Info: PHL17030AL N-channel QFN3333 30 V 17 mΩ logic level MOSFET Rev. 01 — 13 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications

PHL3830AL

Contextual Info: PHL3830AL N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Rev. 1 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications

PSMN9R0-30LL

Contextual Info: PSMN9R0-30LL N-channel QFN3333 30 V 9 mΩ logic level MOSFET Rev. 04 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

lfpak

Abstract: LFPAK package SOT669* PSMN017-60YS PSMN012-60YS as 220 1r7 PSMN015-60PS PSMN5R0-80PS PSMN013-30LL PSMN014-60LS PSMN017-30LL
Contextual Info: NXP power switching MOSFETs in compact QFN3333 package Smaller. Faster. Cooler. 30 V Trench 6 MOSFETs in 3.3 x 3.3 mm QFN package A new range of 30 V Trench 6 MOSFETs in QFN3333 SOT873 package NXP now offers a range of high-performance, 30 V, logic-level MOSFETs in QFN3333 package.

PHL13030AL

Contextual Info: PHL13030AL N-channel QFN3333 30 V 13 mΩ logic level MOSFET Rev. 01 — 13 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of QFN3333-8 package SOT873-1 2.35 2.25 0.635 0.75 0.617 0.05 all around 0.62 1.05 1.91 2.47 0.51 3.9 0.51 0.6 0.83 0.4 (x8) 0.3 (x8) solder land solder paste aperture occupied area solder resist

PSMN035-100LS

Contextual Info: PSMN035-100LS N-channel QFN3333 100 V 32mΩ standard level MOSFET Rev. 2 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power