QFN NO. OF LEADS 40 6 X 6 MM Search Results

Schematics 5250

Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz

ML200M

Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

Contextual Info: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3

Contextual Info: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION

12065A104JAT2A

Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

12065A104JAT2A

Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
Contextual Info: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •

Contextual Info: bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com . SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008

12065A104JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz

bq24100

Abstract: bq24103 bq24103A bq24105 bq24108 bq24113 bq24115 ntc 103at TTC 301 thermistor
Contextual Info: bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com . SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008

xp1080

Abstract: XB1014-QT-0G0T XB1014-QT
Contextual Info: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT January 2011 - Rev 10-Jan-11 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description

Contextual Info: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT December 2009 - Rev 10-Dec-09 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description

EMIF04-1502M8

Contextual Info: EMIF04-1502M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI asymmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering 7 ■ Very low PCB space consumption: 1.7 mm x 1.5 mm 6 3 5 4 ■ Very thin package: 0.6 mm max

XB1014-QT

Abstract: VD-12
Contextual Info: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT January 2010 - Rev 22-Jan-10 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description

FOOTPRINT MO-229 2X3 SOLDERING

Abstract: Theta-JC QFP die down QFN 56 7x7 footprint EIA-783 EIA and EIAJ standards 783 QFN 76 9x9 footprint AN1902 QFN 56 7x7 0.5 JESD51-7 MO-220
Contextual Info: Freescale Semiconductor Application Note AN1902 Rev. 4.0, 9/2008 Quad Flat Pack No-Lead QFN Micro Dual Flat Pack No-Lead (uDFN) 1.0 Purpose This document provides guidelines for Printed Circuit Board (PCB) design and assembly. Package performance such as: MSL rating, board level

EMIF02-MIC03M6

Abstract: JESD97
Contextual Info: EMIF02-MIC03M6 2-line IPAD , EMI filter and ESD protection for microphone Features Pin 1 • ■ ■ ■ ■ ■ ■ ■ EMI symmetrical I/O low-pass filter High efficiency in EMI filtering Very low PCB space consumption: 1.0 mm x 1.45 mm Very thin package: 0.6 mm max

TTC 103 thermistor

Abstract: TTC 103 NTC TTC 103 thermistor TTC 103 ntc thermistor thermistor ttc 103 RTH TTC 103 thermistor Lifepo4 Battery Charger RTH 103at ttc 103 datasheet BQ24105RHLT
Contextual Info: bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com . SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008

TTC 103 thermistor

Abstract: TTC 103 thermistor ttc 103 TTC 103 ntc thermistor NTC TTC 103 thermistor TTC thermistor bq2410x lifepo4 bq24115 RTH 103at
Contextual Info: bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com . SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008

Contextual Info: EMIF04-1005M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features • EMI symmetrical I/O low-pass filter 8 ■ High efficiency in EMI filtering: -34 dB at frequencies from 900 MHz to 1.8 GHz 7 ■ Very thin package: 0.6 mm max

Contextual Info: bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com . SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008

HMC547LP3

Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Contextual Info: HMC547LP3 v00.0305 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz Typical Applications Features The HMC547LP3 is ideal for: High Isolation: >50 dB up to 5 GHz • Basestation Infrastructure >45 dB up to 15 GHz • Fiber Optics & Broadband Telecom Low Insertion Loss: 1.6 dB @ 10 GHz

Contextual Info: bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com . SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008

TTC 103 thermistor

Abstract: thermistor ttc 103 TTC 103 NTC TTC 103 thermistor TTC 103 ntc thermistor SLUS606N Lifepo4 Battery Charger ntc TTC 103 RTH TTC 103 thermistor RTH 103at
Contextual Info: bq24100, bq24103, bq24103A bq24104, bq24105, bq24108, bq24109 Size bq24113, bq24113A, bq24115 Actual 4,5 mm x 3,5 mm www.ti.com . SLUS606N – JUNE 2004 – REVISED NOVEMBER 2008

EMIF02-1003M6

Abstract: JESD97 MX ST
Contextual Info: EMIF02-1003M6 2 line IPAD , EMI filter and ESD protection in Micro QFN package Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual line EMI symmetrical I/O low-pass filter High efficiency in EMI filtering Very low PCB space consumption: 1.0 mm x 1.45 mm