QE 870 Search Results

E5780

Abstract: R7400U AWG22 hv 102 R7400U-50 internal structure of ic 741
Contextual Info: PHOTOMULTlPLlER TUBE PRELIMINARY DATA MAR. 1998 R7400U-50 FEATURES High QE from 550 to 850nm Fast Time Response Compact GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure

R632-01

Abstract: R632 TOSHIBA IR-D80A
Contextual Info: PHOTOMULTlPLlER TUBES R632, R632- 01 S-1 Spectral Response QE 0.05% at 1.06 µm <R632-01> 19mm(3/4 Inch) Diameter, 10–stage, Head–On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material

5024x025

Abstract: 5024x P6009 PEB2255 siemens klein 1992 siemens GR 60 48 V 120 A siemens GR 60 EASY2255 FALC54 GR-1089-CORE
Contextual Info: Institute for Quality Engineering, Testing and Approvals Laboratory ÖN QE 11 "EMI and Overvoltage Protection" Order No.: HI56N Pages: 23 Enclosures: 0 Munich, 23.06.97 Test Report No.: HI56N01M Client: Siemens AG, HL EZM D NW AS Equipment under test: FALC-LH Evaluation-Board EASY2255 V1.1

Contextual Info: Preliminary Data Sheet PD - 9.1029 bitemational 11»]Rectifier IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: International [^Rectifier Provisional Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT c • Short circuit rated - 10|js @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: H A H A iif lT S U PIN S,LIC0N PHOTODIODE FOR YAG LASER DETECTION S3759 te c h n ic a l d ata FOR YAG LASER 1.06 jj . m DETCTION HIGH IR SENSITIVITY (QE 50% AT 1.06 u m), FAST RESPONSE (t*=26ns) LARGE SENSITIVE AREA (5mra dia.), TO-8 PACKAGE GENERAL RATINGS

S4753

Abstract: 0829
Contextual Info: H AM AM ATSU Si PIN Photodiode S4753-02 High-speed sensor for detecting blue and blue green laser FEATURES •W id e band width at low reverse voltage fc : 1.2 GHz V r = 5 V • High sensitivity at 400 nm to 530 nm QE: 88 % at 425 nm • Low dark currents pA Typ. (VR=5 V)

Contextual Info: SMJ34020A GRAPHICS SYSTEM PROCESSOR SGUS011D − APRIL 1991 − REVISED SEPTEMBER 2004 D D D D D D D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 A B C D E F G H J K L M N P R 132-PIN QUAD FLATPACK TOP VIEW 100 D 145-PIN GRID ARRAY PACKAGE ( TOP VIEW ) 1 99 33

MRC031

Abstract: MRC051 BFS25A
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low curren t consum ption PIN • Low noise figure DESCRIPTION C ode: N6 • Gold m etallization ensures e xcellent reliability • S O T 323 envelope. 3

Emcore solar cell

Abstract: EDWA InGaAs array 1550nm 100C multi-junction "solar cell" photoluminescence illumination
Contextual Info: TEMPERATURE DEPENDENT SPECTRAL RESPONSE MEASUREMENTS FOR III-V MULTI-JUNCTION SOLAR CELLS Daniel Aiken, Mark Stan, Chris Murray, Paul Sharps, Jenifer Hills, and Brad Clevenger Emcore Photovoltaics, 10420 Research Rd. SE, Albuquerque, NM 87123 ABSTRACT Temperature coefficients for the integrated current of

Contextual Info: S E M IC O N D U C T O R tm 100341 Low Power 8-Bit Shift Register General Description The 100341 contains eight edge-triggered, D-type flip-flops with individual inputs Pn and outputs (Qn) for parallel op­ eration, and with serial inputs (Dn) and steering logic for bidi­

Contextual Info: SIEMENS BUP 202 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type ^CE h 1000V 12A BUP 202 Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67078-A4401-A2 Maximum Ratings

Contextual Info: International S Rectifier Provisional Data Sheet P D -9 .1 153 IRGNIN100M06 “CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT High Side Switch - o 3 V Œ = 600V ° < o o ¡ i 5 - V ce ON < 2.0V • Rugged Design »Simple gate-drive •Switching-Loss Rating includes all "tail“

Contextual Info: Philips Components 100141 Document No. 853-0619 ECN No. 99800 4-Bit Universal Shift Register Date of Issue June 14,1990 Product Specification Status E C L Products IEC/IEEE SYMBOL PIN DESCRIPTION FEATURES •Typical propagation delay: 1.7ns •Typical supply current -lEE : 175mA

ph40k

Contextual Info: International I«R Rectifier PD - 9 .1 5 7 8A IRG4 PH4 0 K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10[J.S, Vcc = 720V , T j = 125°C, Vg e = 1 5 V

Contextual Info: * SYNERGY S IN G L E S U P P LY I " PECl./TTL -TO-PECl. C ioch vVorns 3Y100S811 S E M IC O N D U C T O R FEATURES • PECL version of popular ECLinPS El 11 ■ Low skew ■ Guaranteed skew spec ■ V s b o u tp u t ■ TTL enable input ■ Selectable TTL or PECL clock input

Contextual Info: 100341 Low Power 8-Bit Shift Register General Description Features The 100341 contains eight edge-triggered, D-type flip-flops with individual inputs Pn and outputs (Qn) for parallel oper­ ation, and with serial inputs (Dn) and steering logic for bidi­

C11701DK-40

Abstract: C11700DK-40 C11700 C11701 1/USB/C12137
Contextual Info: NEWS 01 2012 TM SYSTEMS PRODUCTS PAGE 28 World's first Gen. II sCMOS Camera: Hamamatsu presents ORCA-Flash4.0 SOLID STATE PRODUCTS PAGE 12 Thermopile Detectors for Energy Saving and Security ELECTRON TUBE PRODUCTS PAGE 25 New H11706 and H12056 PMT Modules with Internal Shutters

ortec 457

Abstract: PLP-01 canberra preamplifier irf 2205 TC-454 shg 850 LIDAR radar IRF 715 R5916U-50 410nm
Contextual Info: GATEABLE MICROCHANNEL PLATE PHOTOMULTIPLIER TUBE MCP-PMTs R5916U-50 SERIES Featuring Fast Gating Function with Improved Time Response and Switching Ratio FEATURES High Speed Gating by Low Supply Voltage (+10V) Gate Rise Time : 1 ns 1) Gate Width : 5 ns Fast Rise Time

DIODE c802

Abstract: IRGNI115U06
Contextual Info: bitemational [ t o r Rectifier PD'"71 IRGNI115U06 “CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

C828 transistors

Abstract: c828 tr c828 tr c828 c829 c829 tr c829 c828 02 diode c829 c826 C825 diode
Contextual Info: International ^Rectifier PD-9.955B IRGTI115U06 Ultra-fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK V ce = 600V • Rugged Design •Simple gate-drive • Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"

TOCP 255 Cable

Contextual Info: Philips Components-Signetics 100141 Document No. 853-0619 ECN No. 99800 4—Bit Universal Shift Register Date of Issue June 14, 1990 Status Product Specification ECL Products FEATURES PIN DESCRIPTION •Typical propagation delay: 1.7ns •Typical supply current - lEE : 175mA

MARKING CODE 42t

Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

Contextual Info: M O TO R O L A Order this document by MGW40N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M G W 40N 60U Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced