QE 08 200 Search Results

qe08-200

Abstract: qe 08 200 ks philips qe 08/200 qe 200 amplificateur hf 7Z00 QE08/200 2X40 "2x6 w"
Contextual Info: PHILIPS QE 08/200 BEAMPOWER TETRODE for use as amplifier, oscillator, frequency multiplier or modulator in A.M., S.S.B. and ,F.M. transmitters TÉTRODE À FAISCEAUX pour utilisation comme amplificatrice, oscillatrice, multlplicatrlce de fréquence ou modulatrlce

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

S3590-08

Abstract: S3590-09 PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

scintillator

Abstract: S2744-08 S3588-08
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

PIN photodiode 420 nm

Contextual Info: PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S3590-01

Abstract: S3590-08 S3590-05 scintillator PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S3590-01/-05/-08 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

Contextual Info: Si PINフォトダイオード S2744/S3588-08, -09 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 高量子効率 (未封止タイプ): QE=85 % (λ=540 nm) シンチレーション検出 低容量 TOFカウンタ

QE08/200H

Abstract: AM MODULATOR qe08-200 qe 08/200 qe 200 qe 08 200 Emetteur QE08 Philips SSB philips oszillator
Contextual Info: PHILIPS QE08/200H BEAMPOWER TETRODE for use as amplifier, oscillator, fre­ quency multiplier or modulator in A.M., S.S.B, and P.M. transmitters TETRODE À FAISCEAUX pour utilisation comme amplificatrice, osclllatrice, multiplicatrice de fréquence ou modulatrlce

transistor smd qe

Contextual Info: PRODUCT SPECIFICATION DATE: 08/11/2004 cosmo SMD LED : ELECTRONICS CORPORATION NO. 61L30007 KL-150UDX SHEET 1 OF 9 REV. 1 UNIT:MM TOLERANCE: ± 0.25 Part No. Emitting Color Material Lens Type KL-150UDX Super brightness orange AlGaInP Water Clear Iv IF=20mA

AN1001

Contextual Info: AN1001 APPLICATION NOTE Using ByteSafe SRAMs in Parity and Non-Parity Applications Introduction GSI's ByteSafe™ technology opens a new front in the battle for highly reliable data. Although parity bit storage has been around for as long as digital memory, learning

Contextual Info: SN54LV164A, SN74LV164A 8ĆBIT PARALLELĆOUT SERIAL SHIFT REGISTERS SCLS403H − APRIL 1998 − REVISED APRIL 2005 D 2-V to 5.5-V VCC Operation D Max tpd of 10.5 ns at 5 V D Typical VOLP Output Ground Bounce 14 2 13 3 12 4 5 11 10 9 6 8 7 VCC QH QG QF QE

Contextual Info: SN54F299, SN74F299 8ĆBIT UNIVERSAL SHIFT/STORAGE REGISTERS WITH 3ĆSTATE OUTPUTSą ą The SN54F299 is obsolete and no longer supplied. SDFS071B − MARCH 1987 − REVISED APRIL 2004 D Four Modes of Operation: D D D D D SN54F299 . . . J PACKAGE SN74F299 . . . DW, N, OR NS PACKAGE

Contextual Info: SN54LV164A, SN74LV164A 8-BIT PARALLEL-OUT SERIAL SHIFT REGISTERS SCLS403D – APRIL 1998 – REVISED JANUARY 2001 D D D D SN54LV164A . . . J OR W PACKAGE SN74LV164A . . . D, DB, DGV, NS, OR PW PACKAGE TOP VIEW 2-V to 5.5-V VCC Operation Typical VOLP (Output Ground Bounce)

Contextual Info: SN54LV595A, SN74LV595A 8ĆBIT SHIFT REGISTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS414N − APRIL 1998 − REVISED APRIL 2005 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER OE RCLK SRCLK SRCLR QH′ QC QD QE QF QG QH 15 2 3 14 4 13 5 12 6 11 7 10 8 9 QD QE

Contextual Info: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

QS53806

Abstract: DRIVER16 LTC 433 16646AE PI3L500-AZFE PI5C162861B PI49FCT20802L PI49FCT20803L PI49FCT20803Q PI49FCT20807S
Contextual Info: Pericom Semiconductor Corp. • 3545 North First St. • San Jose, CA 95134 • USA PRODUCT DISCONTINUANCE NOTIFICATION PDN PDN Number: 07-0501 Issue Date: May 29, 2007 Product(s) Affected: See attached file listing all affected products Alternative Supply Sources: N/A

Contextual Info: SN54AHCT594, SN74AHCT594 8-BIT SHIFT REGISTERS WITH OUTPUT REGISTERS SCLS417F – JUNE 1998 – REVISED NOVEMBER 2002 D D 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER RCLR RCLK SRCLK SRCLR QH′ SN54AHCT594 . . . FK PACKAGE TOP VIEW QC QB description/ordering information

339d

Abstract: 8 - input data selector
Contextual Info: INCH-POUND MIL-M-38510/339D 18 February 2004_ SUPERSEDING MIL-M-38510/339C 2 September 1986 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DATA SELECTORS/MULTIPLEXERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON Reactivated after 18 February 2004 and may be used for either new or existing design acquisition.