QE 05/40 H Search Results

QE 05-40 Philips

Abstract: QE 05/40 H qe05 QE 05-40 h Philips I960 QE05-40
Contextual Info: PHILIPS QE05/40F QE 05/40F QE 05/40H Vf 12,6 V If 0,625 A L, " 0 X 4 4 " Base, culot, Sockel: Octal 8-p For further data and_curves please refer to QE 05/40 Pour les autres données et courtes voir QE 05/40 Für die übrigen Daten und Kennlinien siehe QE 05/40

T 1829-1

Abstract: QE 05-40 Philips QE 05/40 H 2x54 3371 HOV 7400 ON QE Series QE 05-40 h Philips 2X15 2x24W
Contextual Info: PHILIPS QE 05/40 BEAM POWER TETRODE for use as R.F. amplifier, oscillator and frequency multiplier and as A.F. amplifier and modulator In mobile and fixed equipment TETRODE A FAISCEAU pour utilisation en amplificatrice, oscillatrice et multlpllcatrlce de frequence H.F. et en

Contextual Info: S P R I N G 2 0 1 5 SCIENTIFIC CAMERAS ENABLING f. 01 f. 02 f. 03 f. 05 f. 06 f. 41 FRAME S PAC E FRAME T H E A R T of S C I E N T I F I C E X P L O R A T I O N 01 41 FRAME f. 02 f. 03 f. 05 f. 06 f. 41 01 FRAME S PAC E 41 TIME .015 13.312 X 13.312 2048 X 2048

MP7002

Abstract: MP700
Contextual Info: TO SH IBA MP7002 TOSHIBA POWER MODULE MP7002 1. M AXIM UM RATINGS Ta = 25°C DIODE CHARACTERISTIC Repetitive Peak Reverse Voltage Peak One Cycle Surge Forward Current (Dl, D2, D3, D4) (50 Hz, Non-Repetitive) Forward Current Junction Temperature Storage Temperature Range

DIODE BZ

Abstract: 2-78A1A MP6759
Contextual Info: TO SH IBA MP6759 TOSHIBA GTR MODULE MOTOR CONTROL APPLICATIONS SILICON N CHANNEL IGBT MP6759 HIGH POWER SWITCHING APPLICATIONS • • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

Contextual Info: T O SH IB A MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: SN54AHCT595, SN74AHCT595 8-BIT SHIFT REGISTERS WITH 3-STATE OUTPUT REGISTERS SCLS374G – MAY 1997 – REVISED JUNE 2000 description The ’AHCT595 devices contain an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. The storage register has parallel

2SC2715

Abstract: TRANSISTOR MARKING FA
Contextual Info: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

Contextual Info: MITSUBISHI LSTTLs M74LS323P 8 -B IT U NIVERSA L S H IF T /S T O R A G E REGISTER DESCRIPTION The PIN CONFIGURATION TOP VIEW M 7 4L S 32 3P is a" semiconductor integrated circuit containing an 8-b it serial/parallel input/parallel ou tp ut shift register

U 665b

Abstract: 4 bit right left shift register ics M74LS323P
Contextual Info: MITSUBISHI LSTTLs M74LS323P 8 -B IT U NIVERSA L S H IF T /S T O R A G E REGISTER DESCRIPTION The PIN CONFIGURATION TOP VIEW M 7 4L S 32 3P is a" semiconductor integrated circuit containing an 8-b it serial/parallel input/parallel ou tp ut shift register

Contextual Info: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: International ^ R e c tifie r P D - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

mxic xtrarom

Contextual Info: MX25L1675E MX25L1675E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1850 1 REV. 1.0, JUL. 05, 2012 MX25L1675E Contents 1. FEATURES. 4

pin configuration of dual 7-segment led

Abstract: HEF4543BT 7-segment common cathode common cathode 14-segment display driver operation of bcd 7 segment HEF4543B HEF4543BP common cathode 7-segment display driver
Contextual Info: HEF4543B BCD to 7-segment latch/decoder/driver Rev. 05 — 27 October 2009 Product data sheet 1. General description The HEF4543B is a BCD to 7-segment latch/decoder/driver for liquid crystal and LED displays. It has four address inputs D0 to D3 , an active LOW latch enable input (LE), an

HEF4511BT

Abstract: hef4511bp datasheet pin configuration of dual 7-segment led HEF4511 HEF4070B HEF4511B HEF4511BP
Contextual Info: HEF4511B BCD to 7-segment latch/decoder/driver Rev. 05 — 13 August 2009 Product data sheet 1. General description The HEF4511B is a BCD to 7-segment latch/decoder/driver with four address inputs D0 to D3 , an active HIGH latch enable input (LE), an active LOW ripple blanking input

SN54AS889

Contextual Info: SN54AS867, SN54AS869 SN74ALS867A, SN74ALS869, SN74AS867, SN74AS869 SYNCHRONOUS 8-BIT UP/DOWN COUNTERS _ SDAS115C - DECEMBER 1982 - REVISED JANUARY 1996 • Fully Programmable With Synchronous Counting and Loading • SN74ALS867A and AS867 Have

Contextual Info: SIEMENS BUP 202 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type ^CE h 1000V 12A BUP 202 Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67078-A4401-A2 Maximum Ratings

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon e i G i 3 1 1 E E E MMPQ2222 MMPQ2222>t ‘ Motorola Preferred Device Gl Q 1 H MAXIMUM RATINGS 1 Rating Symbol MMPQ2222 MMPQ2222A Unit v CEO 30 40 Vdc Collector-Base Voltage

SiI151ACT100

Abstract: JEDEC Package Code MS-026-AED PanelLink AN0007 SiI151A PanelLink Transmitter
Contextual Info: SiI 151A PanelLink Receiver Datasheet May 2000 Features The SiI 151A receiver uses PanelLink Digital technology to support high resolution displays up to SXGA. The SiI 151A receiver supports up to true color panels 24 bit/pixel, 16.7M colors in 1 or 2 pixels/clock mode. In

Ge dual photodiode

Abstract: AMIS-732128 AMIS-732256 AMIS-732512 high frequency linear cmos IMAGE SENSOR linear uv photodiode array Photodiode Array linear linear array photodiode element
Contextual Info: AMIS-732128, AMIS-732256, AMIS-732512 Data Sheet 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays 1.0 Description AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors

1117 S Transistor

Abstract: TOSHIBA bat Transistor b 1117
Contextual Info: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode

MG200Q1US51

Abstract: TV-19 tlf 106
Contextual Info: TO SHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Induetive Load • Low Saturation Voltage : VCE (Sat) = 3.6V (Max.)

IRG4BC10KD

Contextual Info: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,

Contextual Info: SN54AHCT595, SN74AHCT595 8-BIT SHIFT REGISTERS WITH 3-STATE OUTPUT REGISTERS SCLS374G – MAY 1997 – REVISED JUNE 2000 description The ’AHCT595 devices contain an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. The storage register has parallel